1. A light emission angle adjusting sheet comprising a light-input surface and a light-output surface through which light having passed through the light-input surface is let out, wherein
the sheet comprises a low-refractive-index material and a high-refractive-index material having different refractive indices,
on the light-output surface, there are spread a plurality of low-refractive-index material exposed portions, where the low-refractive-index material is exposed, and a plurality of high-refractive-index material exposed portions, where the high-refractive-index material is exposed,
the plurality of low-refractive-index material exposed portions, which have a same area, and the plurality of high-refractive-index material exposed portions, which have different areas, are arranged in a mixed fashion, and
the low-refractive-index material has a shape that monotonically narrows toward the light-input surface.
2. The light emission angle adjusting sheet according to claim 1, wherein
the low-refractive-index material is triangular-prism-shaped, with one angle of a triangular shape pointing to the light-input surface and other two angles pointing to the light-output surface, and defines, on a cross section crossing a prism axis direction, an isosceles triangle having the light-input surface-side one angle as a vertical angle and the other two angles as base angles.
3. The light emission angle adjusting sheet according to claim 1, wherein
the low-refractive-index material exposed portions and the high-refractive-index material exposed portions are arranged alternately,
there are two or more different areas that the high-refractive-index material exposed portions have, and
among the high-refractive-index material exposed portions, high-refractive-index material exposed portions having different areas are arranged alternately.
4. The light emission angle adjusting sheet according to claim 1, wherein
the low-refractive-index material comprises a transparent resin or a transparent resin containing a light-absorbing material.
5. The light emission angle adjusting sheet according to claim 1, wherein
the sheet has a two-layer structure, and
an extension direction of the low-refractive-index material exposed portions in a first layer and an extension direction of the low-refractive-index material exposed portions in a second layer cross each other.
6. The light emission angle adjusting sheet according to claim 1, wherein
the light-output surface is laid with a surface treatment film.
7. A display panel having the light emission angle adjusting sheet according to claim 1 fitted on a display surface.
8. A display device comprising:
the display panel according to claim 7; and
an illuminating device which supplies light to the display panel.
9. The display device according to claim 8, wherein
when
a reference position of the display panel is determined with respect to a horizontal direction, and
on a plane of the display panel arranged in the reference position, a first reference direction is defined to run in a same direction as the horizontal direction and a second reference direction is defined to cross the first reference direction,
then
the low-refractive-index material exposed portions are linear, and a direction in which the low-refractive-index material exposed portions are linear coincides with the first or second reference direction.
10. A method of manufacturing the light emission angle adjusting sheet according to claim 1, wherein
a die processed to have a shape corresponding to a shape of the low-refractive-index material is used in an oxidation process involving anodic oxidation.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1.-12. (canceled)
13. A semiconductor device manufacturing method comprising:
measuring a first flatness of each of a plurality of substrates before formation of a light-shielding film;
predicting, on the basis of the first flatness, a second flatness of said each substrate when said each substrate is chucked on an exposure apparatus;
selecting, from the substrates, at least one substrate having a predetermined flatness on the basis of the second flatness;
predicting, for the selected at least one substrate, a desired third flatness of the at least one substrate after a light-shielding film is formed on the substrate;
forming a light-shielding film on the selected at least one substrate;
measuring a fourth flatness of the at least one substrate having the formed light-shielding film; and
manufacturing an exposure mask by forming a desired pattern on the at least one substrate when it is determined by comparing the fourth flatness with the third flatness that the at least one substrate having the light-shielding film has the desired third flatness;
chucking the exposure mask in the exposure apparatus; and
illuminating a pattern formed on the exposure mask, which is to be used to form a semiconductor element, by an illumination optical system to transfer an image of the pattern onto a predetermined substrate.
14. The semiconductor device manufacturing method of claim 13,
wherein in predicting the third flatness after light-shielding film formation the desired flatness of the at least one substrate after the light-shielding film is formed at a predetermined coverage is predicted, the predetermined coverage being a predetermined percentage of the substrate which is covered by the light-shielding film.
15. The semiconductor device manufacturing method of claim 13,
wherein the desired third flatness is a flatness of the at least one substrate after light-shielding film formation, which ensures that when the at least one substrate is chucked on the exposure apparatus, a flatness in a central portion of a major surface of the at least one substrate is not more than a predetermined value.
16. The semiconductor device manufacturing method of claim 14,
wherein the desired third flatness is a flatness of the at least one substrate after light-shielding film formation, which ensures that when the at least one substrate is chucked on the exposure apparatus, a flatness in a central portion of a major surface of the at least one substrate is not more than a predetermined value.
17. A semiconductor device manufacturing method comprising:
measuring a first flatness of each of a plurality of substrates before formation of a light-shielding film;
predicting, on the basis of the first flatness, a second flatness of said each substrate when said each substrate is chucked on an exposure apparatus;
selecting, from the substrates, at least one first substrate having a first predetermined flatness on the basis of the second flatness;
forming a light-shielding film on the selected at least one first substrate;
measuring a third flatness of the at least one first substrate, the at least one first substrate having the formed light-shielding film;
predicting, on the basis of the third flatness, a fourth flatness of the at least one first substrate when the at least one first substrate after formation of the light-shielding film is chucked on the exposure apparatus;
selecting, from the at least one first substrate, the at least one second substrate having a predetermined second flatness on the basis of the fourth flatness; and
manufacturing an exposure mask by forming a desired pattern on the selected at least one second substrate;
chucking the exposure mask in the exposure apparatus; and
illuminating a pattern formed on the exposure mask, which is to be used to form a semiconductor element, by an illumination optical system to transfer an image of the pattern onto a predetermined substrate.
18. The semiconductor device manufacturing method of claim 17,
wherein in predicting the fourth flatness after light-shielding film formation, the flatness of the at least one first substrate after the light-shielding film is formed at a predetermined coverage is predicted, the predetermined coverage being a predetermined percentage of the substrate which is covered by the light-shielding film.