1. A liquid crystal display, comprising:
a first gate line for transmitting a first gate signal;
a second gate line for transmitting a second gate signal;
a data line for transmitting a data signal;
a pixel unit, electrically connected to the first gate line and the data line, for outputting an image signal according to the first gate signal and the data signal;
a photo-sensing input unit, electrically connected to the first gate line, for generating a sensing voltage according to a driving voltage and an incident light signal, and for outputting a readout signal according to the sensing voltage and the first gate signal;
a driving adjustment unit, electrically connected to the second gate line and the photo-sensing input unit, for providing the driving voltage according to the second gate signal and the incident light signal; and
a readout line, electrically connected to the photo-sensing input unit, for transmitting the readout signal;
wherein the photo-sensing input unit comprises:
a first transistor having a first end for receiving a first common voltage, a gate end for receiving the driving voltage, and a second end;
a first capacitor, electrically connected between the first and second ends of the first transistor; and
a second transistor having a first end electrically connected to the second end of the first transistor, a gate end electrically connected to the first gate line, and a second end electrically connected to the readout line;
wherein the driving adjustment unit comprises:
a third transistor having a first end for receiving a second common voltage, a gate end electrically connected to the second gate line, and a second end electrically connected to the gate end of the first transistor;
a fourth transistor having a first end for receiving a third common voltage, a gate end electrically connected to the second gate line, and a second end electrically connected to the second end of the first transistor; and
a second capacitor electrically connected between the second end of the third transistor and the second end of the fourth transistor.
2. The liquid crystal display of claim 1, wherein the first transistor is a photo-sensing thin film transistor or a photo-sensing field effect transistor, the second transistor is a thin film transistor or a field effect transistor, the third transistor is a thin film transistor or a field effect transistor, and the fourth transistor is a thin film transistor or a field effect transistor.
3. A photo-sensing input device, comprising:
a photo-sensing input unit, for generating a sensing voltage according to a driving voltage and an incident light signal, and for outputting a readout signal according to the sensing voltage and a first gate signal; and
a driving adjustment unit, electrically connected to the photo-sensing input unit, for providing the driving voltage according to a second gate signal and the incident light signal;
wherein the photo-sensing input unit comprises:
a first transistor having a first end for receiving a first common voltage, a gate end for receiving the driving voltage, and a second end;
a first capacitor, electrically connected between the first and second ends of the first transistor; and
a second transistor having a first end electrically connected to the second end of the first transistor, a gate end for receiving the first gate signal, and a second end for outputting the readout signal;
wherein the driving adjustment unit comprises:
a third transistor having a first end for receiving a second common voltage, a gate end for receiving the second gate signal, and a second end electrically connected to the gate end of the first transistor;
a fourth transistor having a first end for receiving a third common voltage, a gate end for receiving the second gate signal, and a second end electrically connected to the second end of the first transistor; and
a second capacitor electrically connected between the second end of the third transistor and the second end of the fourth transistor.
4. The photo-sensing input device of claim 3, wherein the first transistor is a photo-sensing thin film transistor or a photo-sensing field effect transistor, the second transistor is a thin film transistor or a field effect transistor, the third transistor is a thin film transistor or a field effect transistor, and the fourth transistor is a thin film transistor or a field effect transistor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of treating lymphoma in a subject in need thereof, comprising:
administering to a subject afflicted with lymphoma an antibody that binds to tenascin in a treatment effective amount.
2. A method according to claim 1, wherein said antibody is a monoclonal antibody.
3. A method according to claim 1, wherein said subject is a human subject.
4. A method according to claim 1, wherein said antibody is selected from the group consisting of monoclonal antibody 81C6 and antibodies that bind to the epitope bound by monoclonal antibody 81C6.
5. A method according to claim 1, wherein said lymphoma is Hodgkin’s lymphoma.
6. A method according to claim 1, wherein said lymphoma is Non-Hodgkin’s lymphoma.
7. A method according to claim 1, wherein said antibody is coupled to a radioisotope.
8. A method according to claim 7 wherein said radioisotope is selected from the group consisting of 131I, 90Y, 211At, 212Bi, 67Cu, 186Re, 188Re, and 212Pb.
9. A method according to claim 7, wherein said radioisotope is 131I.
10. A method according to claim 7, wherein said antibody coupled to a radioisotope is administered in an amount of from 5,000 rads to 100,000 rads.
11. A method according to claim 1, wherein said administering step is a parenteral injection step.
12. A method of treating Non-Hodgkin’s lymphoma in a human subject in need thereof, comprising:
parenterally administering to a human subject afflicted with lymphoma a monoclonal antibody that binds to tenascin in a treatment effective amount;
wherein said antibody is selected from the group consisting of monoclonal antibody 81C6 and antibodies that bind to the epitope bound by monoclonal antibody 81C6; and
wherein said antibody is coupled to a radioisotope.
13. A method according to claim 12, wherein said Non-Hodgkin’s Lymphoma is unresponsive to chemotherapy treatment selected from the group consisting of rituximab, cyclophosphamide, doxorubicin, vincristine and prednisone treatment.
14. A method according to claim 12, wherein said Non-Hodgkin’s Lymphoma is unresponsive to rituximab treatment.
15. A method according to claim 12, wherein said radioisotope is selected from the group consisting of 131I, 90Y, 211At, 212Bi, 67Cu, 186Re, 188Re, and 212Pb.
16. A method according to claim 12, wherein said radioisotope is 131I.
17. A method according to claim 12, wherein said antibody coupled to a radioisotope is administered in an amount of from 5,000 rads to 100,000 rads.
18. A method according to claim 12, wherein said Non-Hodgkin’s lymphoma is a low grade lymphoma.
19. A method according to claim 12, wherein said Non-Hodgkin’s lymphoma is an intermediate grade lymphoma.
20. A method according to claim 12, wherein said Non-Hodgkin’s lymphoma is a high grade lymphoma.
21. A method according to claim 12, wherein said parenteral administration step is carried out by intravenous injection.