1. A method of forming a metal alloy with a first coefficient of thermal expansion that can be directly attached, joined or bonded to a semiconductor or ceramic material, the metal alloy’s first coefficient of thermal expansion substantially matching a second coefficient of thermal expansion of the semiconductor or ceramic material prior to the metal alloy being directly attached, joined or bonded to the semiconductor or ceramic material, the method comprising the steps of:
selecting a semiconductor or ceramic material,
determining the second coefficient of thermal expansion of the selected semiconductor or ceramic material prior to the metal alloy being directly attached, joined or bonded to the semiconductor or ceramic material,
forming the metal alloy using a composition of titanium and tungsten in which relative percentages of titanium and tungsten in the metal alloy are selected so that the first coefficient of thermal expansion of the metal alloy prior to being directly attached, joined or bonded the semiconductor or ceramic material substantially matches the second coefficient of thermal expansion of the selected semiconductor or ceramic material prior to the metal alloy being directly attached, joined or bonded to the semiconductor or ceramic material, and
wherein the titanium and tungsten alloy being a binary metal compound only.
2. The method of claim 1, wherein the relative percentages of titanium and tungsten in the metal alloy are selected according to an equation given by:
\u03b1
=
\u2211
i
\u2062
\u03b1
i
\u2062
V
i
where \u03b1 is the resultant coefficient of thermal expansion of the metal alloy, \u03b1i is the coefficient of thermal expansion of the individual metal element i, and Vi is the volume fraction of each atom in the alloy.
3. The method of claim 1, wherein the second coefficient of thermal expansion for the metal alloy is varied over a range from approximately 8.6 ppmCelsius to about 4.5 ppmCelsius by varying the relative amounts of the titanium and tungsten used to form the metal alloy.
4. The method of claim 1, wherein the semiconductor or ceramic material contains at least one active device or system selected from a group consisting of microelectronics, photonics, power electronics, monolithic microwave integrated circuits, microelectro-mechanical systems, nano-electro-mechanical systems, and thermo-electrics.
5. The method of claim 4, wherein the metal alloy is a heat sink that is joined to the semiconductor or ceramic material and that removes excess heat from the semiconductor or ceramic substrate.
6. The method of claim 1, wherein the semiconductor or ceramic material is a substrate containing at least one active device or system and wherein the metal alloy is a metal substrate that functions as a mechanical support and as a heat sinkheat spreader to transport heat away from the semiconductor or ceramic substrate.
7. The method of claim 6, wherein the semiconductor or ceramic substrate is bonded to the metal alloy substrate without the use of an intermediate layer.
8. The method of claim 1, wherein the alloy of titanium and tungsten is formed using powder metallurgy.
9. The method of claim 1, wherein the alloy of titanium and tungsten is formed using vapor deposition.
10. The method of claim 1, wherein the alloy of titanium and tungsten is formed using any one of the techniques including: mechanical alloying; solid-state reaction; melt spinning, and ion radiation.
11. The method of claim 1, wherein the alloy of titanium and tungsten has a fine finish that is achieved using a process selected from a group consisting of machining, micro-machining, electro-discharged machining, casting, milling and polishing.
12. The method of claim 6, wherein the heat sink has fins machined on the surface(s) not bonded to the semiconductor or ceramic substrate to facilitate the removal of heat from active devices made in a semiconductor or ceramic substrate bonded or mated to the heat sink.
13. The method of claim 6, wherein the heat sink has micro-channels in it through which water is forced to facilitate the removal of heat from a laser diode or an array of laser diodes.
14. The method of claim 6, wherein the heat sink has active cooling or refrigeration capability built into it to facilitate the removal of heat from semiconductor or ceramic substrate.
15. The method of claim 6, wherein the semiconductor or ceramic substrate contains a laser diode or an array of laser diodes, and wherein the heat sink has micro-channels in it through which water is forced to facilitate the removal of heat from the laser diode or array of laser diodes.
16. The method of claim 11, wherein the surface of the metal alloy substrate is polished prior to bonding to the semiconductor or ceramic substrate.
17. The method of claim 6, wherein the metal alloy substrate is a device selected from a group consisting of a mechanical support, a heat sink, at least one electrode to supply current andor voltage to active devices or systems on the semiconductor or ceramic substrate, and a metal shield to protect active devices formed on the semiconductor or ceramic substrate.
18. A method of forming a metal alloy with a first coefficient of thermal expansion that can be directly attached, joined or bonded to a semiconductor or ceramic material, the metal alloy’s first coefficient of thermal expansion substantially matching a second coefficient of thermal expansion of the semiconductor or ceramic material prior to the metal alloy being directly attached, joined or bonded to the semiconductor or ceramic material, the method comprising the steps of:
selecting a semiconductor or ceramic material,
determining the second coefficient of thermal expansion of the selected semiconductor or ceramic material prior to the metal alloy being directly attached, joined or bonded to the semiconductor or ceramic material,
forming the metal alloy using a composition of titanium and tungsten in which relative percentages of titanium and tungsten in the metal alloy are selected so that the first coefficient of thermal expansion of the metal alloy prior to being directly attached, joined or bonded to the semiconductor or ceramic material substantially matches the second coefficient of thermal expansion of the selected semiconductor or ceramic material prior to the metal alloy being directly attached, joined or bonded to the semiconductor or ceramic material, the relative percentages of titanium and tungsten in the metal alloy being selected according to an equation given by:
\u03b1
=
\u2211
i
\u2062
\u03b1
i
\u2062
V
i
where \u03b1 is the resultant coefficient of thermal expansion of the metal alloy, a \u03b1i is the coefficient of thermal expansion of the individual metal element i, and Vi is the volume fraction of each atom in the alloy, and
wherein the titanium and tungsten alloy being a binary compound only.
19. The method of claim 18, wherein the second coefficient of thermal expansion for the metal alloy is varied over a range from approximately 8.6 ppmCelsius to about 4.5 ppmCelsius by varying the relative amounts of the titanium and tungsten used to form the metal alloy.
20. The method of claim 18, wherein the semiconductor or ceramic material contains at least one active device or system selected from a group consisting of microelectronics, photonics, power electronics, monolithic microwave integrated circuits, microelectro-mechanical systems, nano-electro-mechanical systems, and thermo-electrics.
21. The method of claim 18, wherein the metal alloy is a heat sink that removes excess heat from the semiconductor or ceramic substrate.
22. The method of claim 18, wherein the semiconductor or ceramic material is a substrate containing at least one active device or system and wherein the metal alloy is a metal substrate that functions as a mechanical support and as a heat sinkheat spreader to transport heat away from the semiconductor or ceramic substrate.
23. The method of claim 22, wherein the semiconductor or ceramic substrate is bonded to the metal alloy substrate without the use of an intermediate layer.
24. The method of claim 18, wherein the alloy of titanium and tungsten is formed using powder metallurgy.
25. The method of claim 18, wherein the alloy of titanium and tungsten is formed using vapor deposition.
26. The method of claim 18, wherein the alloy of titanium and tungsten is formed using any one of the techniques including: mechanical alloying; solid-state reaction; melt spinning, and ion radiation.
27. The method of claim 18, wherein the alloy of titanium and tungsten has a fine finish that is achieved using a process selected from a group consisting of machining, micro-machining, electro-discharged machining, casting, milling and polishing.
28. The method of claim 22, wherein the heat sink has fins machined on the surface(s) not bonded to the semiconductor or ceramic substrate to facilitate the removal of heat from active devices made in a semiconductor or ceramic substrate bonded or mated to the heat sink.
29. The method of claim 22, wherein the heat sink has micro-channels in it through which water is forced to facilitate the removal of heat from a laser diode or an array of laser diodes.
30. The method of claim 22, wherein the heat sink has active cooling or refrigeration capability built into it to facilitate the removal of heat from semiconductor or ceramic substrate.
31. The method of claim 22, wherein the semiconductor or ceramic substrate contains a laser diode or an array of laser diodes, and wherein the heat sink has micro-channels in it through which water is forced to facilitate the removal of heat from the laser diode or array of laser diodes.
32. The method of claim 27, wherein the surface of the metal alloy substrate is polished prior to bonding to the semiconductor or ceramic substrate.
33. The method of claim 22, wherein the metal alloy substrate has one or more functions including a mechanical support, a heat sink, electrodes to supply current andor voltage to active devices or systems on semiconductor substrate, and metal shielding to protect active devices made in the semiconductor substrate.
34. A method of forming a metal alloy substrate with a first coefficient of thermal expansion that can be directly attached, joined or bonded to a semiconductor or ceramic material substrate, the metal alloy’s first coefficient of thermal expansion substantially matching a second coefficient of thermal expansion of the semiconductor or ceramic material substrate to which the metal alloy is joined prior to the metal alloy being directly attached, joined or bonded to the semiconductor or ceramic material substrate, the method comprising the steps of:
selecting a semiconductor or ceramic material substrate,
determining the second coefficient of thermal expansion of the selected semiconductor or ceramic material substrate prior to the metal alloy being directly attached, joined or bonded to the semiconductor or ceramic material substrate,
forming the metal alloy using a composition of titanium and tungsten in which relative percentages of titanium and tungsten in the metal alloy are selected so that the first coefficient of thermal expansion of the metal alloy prior to being directly attached, joined or bonded to the semiconductor or ceramic material substrate substantially matches the second coefficient of thermal expansion of the selected semiconductor or ceramic material substrate prior to the metal alloy being directly attached, joined or bonded to the semiconductor or ceramic material substrate, the relative percentages of titanium and tungsten in the metal alloy being selected according to an equation given by:
\u03b1
=
\u2211
i
\u2062
\u03b1
i
\u2062
V
i
where \u03b1 is the resultant coefficient of thermal expansion of the metal alloy substrate, \u03b1i is the coefficient of thermal expansion of the individual metal element i, and Vi is the volume fraction of each atom in the alloy, the semiconductor or ceramic material substrate containing at least one active device or system, the metal alloy being a heat sink that removes excess heat from the semiconductor or ceramic substrate, and thus, the at least one active device or system, and
wherein the titanium and tungsten alloy being a binary metal compound only.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for treating a disease that requires induction of apoptosis for its treatment, a carcinomatous disease, a disease that requires protection against oxidation for its treatment, a disease that requires inhibition of active oxygen production for its treatment, a disease that requires inhibition of nitric monoxide production for its treatment, a disease that requires inhibition of lipid peroxide radical production for its treatment or a disease that requires immunoregulation for its treatment, the method comprising
administering a pharmaceutical composition which comprises as an active ingredient at least one member selected from the group consisting of:
(1) a compound selected from the group consisting of 3,6-anhydrogalactopyranose represented by the formula (I):
an aldehyde thereof, a hydrate thereof, and a 2-O-methylated derivative of said 3,6-anhydrogalactopyranose, said aldehyde or said hydrate; and
(2) a soluble saccharide containing the compound at its reducing end.
2. A method according to claim 1, wherein the saccharide is a product produced by acid decomposition under acidic conditions below pH 7 andor enzymatic digestion of a substance containing at least one compound selected from the group consisting of 3,6-anhydrogalactopyranose represented by said formula I, an aldehyde or a hydrate thereof, and a 2-0-methylated derivative of the 3,6-anhydrogalactopyranose, said aldehyde or said hydrate.
3. A method according to claim 2, wherein the substance containing at least one compound selected from the group consisting of 3,6-anhydrogalactopyranose represented by formula I, an aldehyde and a hydrate thereof, and 2-0-methylated derivatives of the 3,6-anhydrogalactopyranose, the aldehyde and the hydrate is at least one substance selected from the group consisting of agar, agarose and carrageenan.
4. A method according to claim 1, wherein the saccharide is at least one saccharide selected from the group consisting of agarobiose, agarotetraose, agarohexaose, agarooctaose, \u03ba-carabiose, and \u03b2-D-galactopyranosyl-3,6-anhydro-2-O-methyl-L-galactose.