1. A method, comprising:
receiving a message that a call has been made to a destination;
determining that the destination is not available;
providing a menu of options for receiving content while the destination is not available;
receiving a selection of one of the menu options; and
providing content according to the selection.
2. The method of claim 1, wherein a calling party uses one of an analog telephone, a digital telephone, and a digital telephony device to make the call.
3. The method of claim 1, wherein the destination is one of a human and an interactive voice response (IVR) application.
4. The method of claim 1, further comprising providing a notification to a point of origin that the destination is unavailable.
5. The method of claim 1, further comprising retrieving the content from a content library.
6. The method of claim 1, further comprising:
determining that the destination is available; and
providing a connection between a point of origin and the destination.
7. The method of claim 1, wherein the content is audio content.
8. The method of claim 1, wherein the menu is provided by an interactive voice response unitintelligent peripheral.
9. The method of claim 1, wherein the message is received via Signaling System 7 (SS7) signaling.
10. The method of claim 1, wherein determining that the destination is not available includes using one of an advanced intelligent network, a private branch exchange, and an automated call distribution system.
11. The method of claim 1, tangibly embodied as computer-executable instructions stored on one or more computer-readable media.
12. The method of claim 1, wherein the content is one or more of music, news, and an advertisement.
13. A system, comprising:
at least a first computing device configured to receive a message that a call has been made to a destination and to determine whether the destination is available;
a content library including electronic content;
a second computing device distinct from said first computing device in selective communication with the content library, the second computing device configured to:
receive a message from the first computing device that the destination is unavailable;
provide a menu of options for receiving content;
receive a selection of one of the menu options; and
provide content from the content library according to the selection.
14. The system of claim 13, wherein a calling party uses one of an analog telephone, a digital telephone, and a digital telephony device to make the call.
15. The system of claim 13, wherein said first computing device is one of an advanced intelligent network, a private branch exchange, and an automated call distribution system.
16. The system of claim 13, wherein said second computing device is an interactive voice response unitintelligent peripheral.
17. The system of claim 13, wherein the electronic content is one of music, news, and an advertisement.
18. The system of claim 13, wherein the message is received via Signaling System 7 (SS7) signaling.
19. A system, comprising:
an advanced intelligent network (AIN) configured to receive a message that a calling party has made a call to a called telephone and to determine whether the called party is available;
a content library including electronic content; and
an interactive voice response unitintelligent peripheral in selective communication with the content library, the interactive voice response unitintelligent peripheral configured to:
receive a message from the AIN that the called party is unavailable;
provide to the calling party a menu of options for receiving content;
receive a selection of one of the menu options from the calling party; and
provide content to the calling party according to the content selection.
20. The system of claim 19, wherein at least one of a calling telephone and a called telephone is one of an analog telephone, a digital telephone, and a digital telephony device.
21. The system of claim 19, wherein the electronic content is one of music, news, and an advertisement.
22. The system of claim 19, wherein the message is received via Signaling System 7 (SS7) signaling.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of processing a wafer using a Post Application Bake (PAB)) procedure, the method comprising:
transferring a plurality of selected wafers to one or more deposition modules, wherein a plurality of coated wafers are created by depositing a first material layer on each of the selected wafers;
transferring at least one coated wafer to an inspection module coupled to at least one of the deposition modules, wherein pre-processing inspection data is determine by the inspection module;
transferring a first coated wafer to a bake plate in a thermal processing unit coupled to one or more of the deposition modules, wherein a first wafer thermal profile is established for the first coated wafer using a pre-heated bake plate;
determining first exhaust gas data (EG1) for the first coated wafer at a first processing time (t1), wherein the bake plate is configured within a processing chamber in the thermal processing unit and an Exhaust Gas Analyzer (EGA) subsystem is coupled to a top portion of the processing chamber, the EGA subsystem being configured to determine the first exhaust gas data (EG1);
comparing the first exhaust gas data (EG1) to processing limits established for the first coated wafer;
continuing to process the first coated wafer if the first exhaust gas data (EG1) does not exceed at least one of the processing limits established for the first coated wafer; and
stopping the PAB procedure if the first exhaust gas data (EG1) exceeds one or more of the processing limits established for the first coated wafer.
2. The method of claim 1, wherein continuing to process the first coated wafer further comprises:
determining new exhaust gas data (EGn) for the first coated wafer at a new processing time (tn), wherein the bake plate is configured to heat the first coated wafer during the new processing time (tn), the EGA subsystem being configured to determine the new exhaust gas data (EGn) during the new processing time (tn);
comparing the new exhaust gas data (EGn) to new processing limits established for the first coated wafer;
continuing to perform the PAB procedure if the new exhaust gas data (EGn) does not exceed at least one of the new processing limits established for the first coated wafer; and
stopping the PAB procedure if the new exhaust gas data (EGn) exceeds one or more of the new processing limits established for the first coated wafer.
3. The method of claim 2, wherein continuing to perform the PAB procedure further comprises:
storing the new exhaust gas data (EGn) and an associated new processing time (tn);
establishing a new integer counting variable (n+1);
comparing new integer counting variable (n+1) to a counting variable limit (PN) established for the first coated wafer;
continuing to perform the PAB procedure if the new integer counting variable (n+1) does not exceed the counting variable limit (PN) established for the first coated wafer; and
stopping the PAB procedure if the new integer counting variable (n+1) exceeds the counting variable limit (PN) established for the first coated wafer.
4. The method of claim 1, wherein the first material layer comprises organic material, non-organic material, radiation-sensitive material, non-radiation-sensitive material, solvent material, photoresist material, or anti-reflective coating (ARC) material, or any combination thereof.
5. The method of claim 1, further comprising:
determining if the first coated wafer is on the bake plate using the first exhaust gas data (EG1); and
stopping the PAB procedure when the wafer is not on the bake plate.
6. The method of claim 1, further comprising:
determining if a correct first material layer is on the first coated wafer using the first exhaust gas data (EG1); and
stopping the PAB procedure when the correct first material layer is not on the first coated wafer.
7. The method of claim 1, wherein the first exhaust gas data (EG1) includes concentration data for gas components associated with top coat (TC) barrier material, top antireflective coating (TARC) material, bottom antireflective coating (BARC) material, photoresist material, sacrificial material, filler material, barrier material, poly-gate material, or metal gate material, or any combination thereof.
8. The method of claim 1, wherein the first exhaust gas data (EG1) includes wavelength data for gas components associated with top coat (TC) barrier material, top antireflective coating (TARC) material, bottom antireflective coating (BARC) material, photoresist material, sacrificial material, filler material, barrier material, poly-gate material, or metal gate material, or any combination thereof.
9. The method of claim 1, wherein the first exhaust gas data (EG1) includes concentration data for gas components associated with solvents for top coat (TC) barrier material, solvents for top antireflective coating (TARC) material, solvents for bottom antireflective coating (BARC) material, solvents for photoresist material, solvents for sacrificial material, solvents for filler material, solvents for barrier material, solvents for poly-gate material, or solvents for metal gate material, or any combination thereof.
10. A method of processing a plurality of wafers using a Post Application Bake (PAB)) teaching procedure, the method comprising:
a) initializing the PAB teaching procedure, wherein a first counting variable (n) and a teaching limit (TN) are established for each teaching time (tn), the first counting variable (n) having an integer value greater than zero, the teaching limit (TN) being an integer having a value greater than ten, wherein a second counting variable (m) and a counting limit (WM) are established for coated wafers (Wm), the second counting variable (m) having an integer value greater than zero, the counting limit (WM) being an integer having a value greater than three;
b) establishing a first value (n=1) for a first PAB teaching time (t1), wherein an initial value (m=1) is determined for a first PAB teaching wafer (TW1);
c) establishing an (nth) teaching bake plate temperature profile (TBPTPn) for a bake plate during an (nth) PAB teaching time (tn), wherein an (mth) coated teaching wafer (TWm) is positioned on the bake plate and (nth) teaching input powers (TIPn) are provided to at least one resistance heater embedded in the bake plate during the (nth) PAB teaching time (tn);
d) determining (nth) teaching exhaust gas data (TEGn) for the (mth) coated teaching wafer (TWm) during the (nth) PAB teaching time (tn), wherein an (nth) wafer temperature profile (WTPn) is established for the (mth) coated teaching wafer (TWm) during the (nth) PAB teaching time (tn), and an Exhaust Gas Analyzer (EGA) subsystem is coupled to a top portion of a processing chamber, the EGA subsystem being configured to determine the (nth) teaching exhaust gas data (TEGn) for the (mth) coated teaching wafer (TWm) during the (nth) PAB teaching time (tn);
e) determining if the (nth) teaching exhaust gas data (TEGn) exceeds one or more (nth) teaching exhaust gas limits (TEGLn) during the (nth) PAB teaching time (tn);
f) performing an (nth) corrective action (CAn) when the (nth) teaching exhaust gas data (TEGn) exceeds one or more (nth) teaching exhaust gas limits (TEGLn) during the (nth) PAB teaching time (tn);
g) establishing a new first counting variable (n+1) by incrementing the first counting variable (n), wherein the new first counting variable (n+1) is compared to the teaching limit (TN) established for the (mth) coated teaching wafer (TWm);
h) repeating steps c-g, when the new first counting variable (n+1) does not exceed the teaching limit (TN) established for the (mth) coated teaching wafer (TWm);
i) establishing a new second counting variable (m+1) by incrementing the second counting variable (m), when the new first counting variable (n+1) exceeds the teaching limit (TN) established for the (mth) coated teaching wafer (TWm);
j) repeating steps b-i, using a new coated teaching wafer (TWm+1) when the new second counting variable (m+1) does not exceed the counting limit (WM) established for the PAB teaching procedure; and
m) stopping the PAB teaching procedure when the new second counting variable (m+1) exceeds the counting limit (WM) established for the PAB teaching procedure.
11. The method of claim 10, wherein the new exhaust gas data (EGn) and new PAB processing time (tn) are stored before the PAB teaching procedure is stopped.
12. The method of claim 10, wherein the (nth) corrective action (CAn) includes providing new teaching input power (NIPTn) values to one or more resistance heaters embedded in the bake plate.
13. The method of claim 10, wherein the (nth) corrective action (CAn) includes: updating at least one bake plate temperature profile (BPTPn+1) that is to be established for the bake plate during a next processing time (tn+1); updating an input power (IPn+i) that is to be provided to one or more resistance heaters embedded in the bake plate during the for the next processing time (tn+1); and storing the updated bake plate temperature profile (BPTPn+1) and the updated input power (IPn+1).
14. The method of claim 10, wherein first teaching exhaust gas data (TEG1) is determined for a coated teaching wafer during the first PAB teaching time (t1); the first teaching exhaust gas data (TEG1) is compared to historical exhaust gas data to determine if the coated teaching wafer is correctly positioned on a pre-heated bake plate and if the coated teaching wafer has a correct material layer thereon; and the PAB teaching procedure is stopped when the coated teaching wafer is not correctly positioned on the pre-heated bake plate or when the coated teaching wafer has an incorrect material layer thereon.
15. The method of claim 10, wherein each coated teaching wafer includes organic material, non-organic material, radiation-sensitive material, non-radiation-sensitive material, solvent material, photoresist material, barrier material, anti-reflective coating (ARC) material, bottom antireflective coating (BARC) material, top antireflective coating (TARC) material, sacrificial material, filler material, ceramic material, poly-gate material, or metal gate material, or any combination thereof deposited on a semiconductor layer.
16. The method of claim 10, wherein the (nth) teaching exhaust gas data (TEGn) includes concentration data for gas components associated with top coat (TC) barrier material, top antireflective coating (TARC) material, bottom antireflective coating (BARC) material, photoresist material, sacrificial material, filler material, barrier material, poly-gate material, or metal gate material, or any combination thereof.
17. The method of claim 10, wherein the (nth) teaching exhaust gas data (TEGn) includes wavelength data for gas components associated with top coat (TC) barrier material, top antireflective coating (TARC) material, bottom antireflective coating (BARC) material, photoresist material, sacrificial material, filler material, barrier material, poly-gate material, or metal gate material, or any combination thereof.
18. The method of claim 10, wherein pre-processing inspection data is obtained for a first coated teaching wafer (TW1) before the first coated teaching wafer (TW1) is positioned on the bake plate, and post-processing inspection data is obtained for the first coated teaching wafer (TW1) after the first coated teaching wafer (TW1) is removed from the bake plate.
19. The method of claim 10, wherein one or more photoresist drying profiles andor photoresist drying rates are calculated using the (nth) teaching exhaust gas data and associated teaching wafer temperature profiles.
20. The method of claim 10, wherein one or more gas concentration profiles andor gas flow rates are calculated using the (nth) teaching exhaust gas data and associated teaching wafer temperature profiles.