1. An image enhancement method comprising:
(a) obtaining a plurality exposures with a low signalnoise ratio,
(b) identification of original images with the best sharpness from these exposures, and
(c) making the final image with a high signalnoise ratio and high definition, by filtering the images with shorter exposure times by using data from the images with longer exposure times;
2. An image enhancement method as claimed in claim 1, wherein original images are taken from groups of exposures one after another where exposures from the same group either partially overlap in time or the interval between them does not exceed 120 of the total time of the exposure;
3. An image enhancement method as claimed in claim 1, wherein the final image is built through fusion of original images from the same group with different exposure times.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A wrap insulating gate field effect transistor comprising a nanowire of a material with a first bandgap forming the current channel of the transistor;
a source contact arranged on one end of the nanowire;
a drain contact arranged on the opposite end of the nanowire;
a wrap gate contact enclosing a portion of the nanowire between the source contact and the drain contact, defining a gate region, wherein the nanowire comprises at least one heterostructure with at least one segment of a material with a second bandgap, th second bandgap being different from the first bandgap, and the at least one heterostructure being in connection with one of the source contact, drain contact or gate contact.
2. The transistor according to claim 1, wherein the second bandgap is wider than the first bandgap.
3. The transistor according to claim 1, wherein the heterostructure is positioned at least partly within the gate region.
4. The transistor according to claim 1, wherein one heterostructure is positioned in connection with the source contact.
5. The transistor according to claim 1, wherein one heterostructure is positioned in connection with the drain contact.
6. The transistor according to claim 1, wherein at least one of the heterostructure is of a material with a narrower bandgap than the material of the nanowire and is provided to reduce the contact resistance between the nanowire and the source andor drain contact.
7. The transistor according claim 1, wherein at least one first heterostructure is positioned at least partly within the portion of the nanowire enclosed by the gate contact and a second heterostructure is positioned in connection with the source contact or in connection with the drain contact.
8. The transistor according to claim 1, wherein a segment or segments of larger band gap material is provided in the drain-gate region to reduce the impact ionization rate of the transistor.
9. The transistor according to claim 1, wherein a segment or segments of larger band gap material is provided in the source-gate region to reduce the impact ionization rate of the transistor.
10. The transistor according to claim 1, wherein a segment or segments of larger band gap material is provided in the drain-gate region to reduce the off0-current of the transistor.
11. The transistor according to claim 1, wherein a segment or segments of larger bandgap material is provided in the gate region to reduce drain induced barrier lowering of the transistor.
12. The transistor according to claim 1, wherein external contacts connected to at least two of the source contact, drain contact or gate contact are arranged in a cross-bar geometry to reduce parasitic capacitance.
13. The transistor according to claim 1, optimized for analog applications by providing:
segments of heterostructures of a first material with a narrower band gap than the nanowire at the source and drain region respectively to reduce the specific contact resistance;
at least one segment at least partly within the gate region and extending towards the drain region, the segment consisting of a second material with wider band gap than the material of the nanowire in order to reduce the impact generation process in the high field region.