1. A downhole apparatus comprising:
a first tubular member disposed in a well bore;
a second tubular member disposed in the well bore;
an expansion device coupled to the second tubular member; and
a connection coupled between the first and second tubular members comprising a retention mechanism that is releasable in response to radial expansion and plastic deformation of the second tubular member by the expansion device.
2. The apparatus of claim 1 wherein the retention and release mechanism comprises a radially releasable collet connection.
3. The apparatus of claim 2 wherein a collet finger of the collet connection radially expands in response to the radial expansion force of the expansion device.
4. The apparatus of claim 3 further including a sliding member disposed between the expansion device and the collet finger.
5. The apparatus of claim 1 wherein the retention and release mechanism comprises a series of collet fingers on the second tubular member interlocked with latches on the first tubular member.
6. The apparatus of claim 5 further comprising a slider coupled between the collet fingers and the latches.
7. The apparatus of claim 6 wherein the slider prevents relative rotation between the tubular members.
8. The apparatus of claim 6 wherein the slider comprises splines received in aligned slots of the tubular members.
9. The apparatus of claim 8 wherein the splines move in the aligned slots in response to axial displacement of the expansion device during radial expansion and plastic deformation.
10. The apparatus of claim 1 wherein the first tubular member is a tubing string removable to the surface of the well bore and the second tubular member is an expandable casing installable in the well bore.
11. A downhole apparatus comprising:
a first downhole tubular member;
a radially expandable second downhole tubular member; and
a releasable connection coupled between the first and second tubular members configured to receive an expansion device from the radially expandable second tubular member.
12. The apparatus of claim 11 wherein the releasable connection comprises a collet connection between the first and second tubular members.
13. The apparatus of claim 12 wherein the collet connection is releasable in response to a radial expansion force of the expansion device.
14. The apparatus of claim 11 further comprising a sliding member coupled to the collet connection.
15. The apparatus of claim 14 wherein the sliding member is moveable in response to axial displacement of the expansion device.
16. The apparatus of claim 15 wherein the sliding member activates the collect connection.
17. The apparatus of claim 14 wherein the sliding member includes splines interlocking with slots in the collet connection.
18. A method of releasing two downhole tubular members comprising:
coupling the two tubular members with a releasable connection;
displacing an expansion device through one of the tubular members to radially expand and plastically deform the tubular member; and
releasing the connection between the two tubular members by displacing the expansion device therethrough.
19. The method of claim 18 further comprising:
coupling the two tubular members with a releasable connection by engaging a collet connection; and
releasing the collet connection by radially expanding collet fingers in response to the displacement of the expansion device.
20. The method of claim 18 further comprising:
installing against a well bore the radially expanded and plastically deformed tubular member; and
removing to the surface of the well bore with the expansion device the released other tubular member.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing an organic light emitting diode (OLED) display, comprising:
sequentially layering a polycrystalline silicon layer, a gate insulating layer, and a first metal layer on the substrate main body;
forming a polycrystalline silicon layer pattern, a gate insulating layer pattern, and a first conductive layer pattern, by patterning the polycrystalline silicon layer, the gate insulating layer, and the first metal layer, the polycrystalline silicon layer pattern comprising an active layer and a first capacitor electrode, and the first conductive layer pattern comprising a gate electrode and a second capacitor electrode disposed on the gate insulating pattern;
forming an interlayer insulating layer on the first conductive layer pattern;
patterning the interlayer insulating layer to form an interlayer insulating layer pattern, the patterning comprising forming contact holes that expose the active layer and the first capacitor electrode; and
forming a second conductive layer pattern on the interlayer insulating layer pattern and in the contact holes,
wherein the gate insulating layer pattern is formed in a same pattern as the polycrystalline silicon layer pattern.
2. The method of claim 1, wherein the polycrystalline silicon layer pattern, the gate insulating layer pattern, and the first conductive layer pattern are formed together through a photolithography process using a double exposure or halftone exposure process.
3. The method of claim 1, wherein:
the contact holes expose the second capacitor electrode and the gate electrode; and
the contact holes that expose the active layer extend through the gate insulating layer pattern.
4. The method of claim 1, wherein the second conductive layer pattern comprises a source electrode and a drain electrode that are connected to the active layer through corresponding ones of the contact holes.
5. The method of claim 1, wherein the first conductive layer pattern further comprises:
a data line; and
a common power line.
6. The method of claim 1, wherein the forming of the second conductive layer pattern comprises:
sequentially layering a transparent conductive layer and a second metal layer on the interlayer insulating layer;
forming a source electrode, a drain electrode, and a pixel electrode by patterning the transparent conductive layer and the second metal layer, the source and drain electrodes comprising portions of the transparent conductive layer and the second metal layer, and the pixel electrode comprising a portion of the transparent conductive layer.
7. The method of claim 6, further comprising doping an n-type or p-type impurity into the polycrystalline silicon layer, before forming the second conductive layer pattern.
8. The method of claim 1, wherein the forming of the second conductive layer pattern comprises:
sequentially layering a transparent conductive layer and a second metal layer on the interlayer insulating layer pattern; and
forming a source electrode, a drain electrode, and a pixel electrode that include the transparent conductive layer, by patterning the transparent conductive layer and the second metal layer together.
9. The method of claim 8, further comprising doping an n-type or p-type impurity on an area of a portion of the polycrystalline silicon layer pattern after forming the second conductive layer pattern.
10. The method of claim 8, further comprising:
forming the pixel definition film having an opening exposing a portion of the pixel electrode on the second conductive layer pattern;
forming an organic emission layer on the pixel electrode; and
forming a common electrode on the organic emission layer.
11. The method of claim 10, wherein the second conductive layer pattern comprises:
a gate line; and
a connection line that contacts the gate electrode and the second capacitor electrode through corresponding ones of the contact holes.
12. The method of claim 10, wherein the forming of the interlayer insulating layer comprises:
forming a first interlayer insulating layer on the first conductive layer pattern; and
forming a second interlayer insulating layer on the first interlayer insulating layer,
wherein a refractive index of the second interlayer insulating layer is different than a refractive index of the first interlayer insulating layer.
13. The method of claim 12, wherein the first and second interlayer insulating layers comprise an inorganic film, an organic film, or a combination thereof.