1. A method for cleaning nickel and platinum residues from a surface of a substrate, comprising:
exposing the surface to a sulfuric acid solution;
performing a rapid thermal anneal process;
after exposing the surface to the sulfuric acid solution and performing the rapid thermal anneal, exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid; and
exposing the surface to a second solution containing dissolved chlorine gas.
2. A method as in claim 1, further comprising bubbling chlorine gas through a fluid to form the second solution.
3. A method as in claim 2, wherein the fluid comprises water, acid or an organic solvent.
4. A method as in claim 1, wherein the chlorine gas is generated from Ca(OCl)2 reacting with HCl, from MnO2 reacting with HCl, or from NaOCl reacting with NH3.
5. A method for forming a nickel platinum silicide, the method comprising:
providing a substrate, the substrate comprising at least one silicon region;
forming a layer comprising nickel and platinum on the substrate;
performing a first thermal process to form nickel platinum silicide;
cleaning an un-reactive part of nickel platinum by exposing the substrate to a first solution,
the first solution comprising a mixture of nitric acid and hydrochloric acid;
cleaning platinum residues using a second solution containing dissolved chlorine gas; and
after performing the first thermal process and before exposing the substrate to the first solution, exposing the substrate to a third solution comprising nitric acid and performing a second rapid thermal process.
6. A method as in claim 5, further comprising bubbling chlorine gas through a fluid to form the second solution.
7. A method as in claim 6, wherein the fluid comprises water, acid or an organic solvent.
8-9. (canceled)
10. A method for forming a semiconductor device, the method comprising:
forming a transistor including a gate electrode and a sourcedrain diffused layer over a semiconductor substrate;
forming a nickel platinum layer over the semiconductor substrate, covering the gate electrode and the sourcedrain diffused layer;
performing a first rapid thermal process;
exposing the semiconductor substrate to a first solution comprising nitric acid; performing a second rapid thermal process;
exposing the substrate to a second solution comprising a mixture of nitric acid and hydrochloric acid; and
exposing the substrate to a third solution containing dissolved chlorine gas.
11. A method as in claim 10, further comprising bubbling chlorine gas through a fluid to form the second solution.
12. A method as in claim 11, wherein the fluid comprises water, acid or an organic solvent.
13. A method as in claim 10 wherein the temperature of the third solution is between about 40 and about 60 C.
14. A method as in claim 10, wherein the chlorine gas is generated from Ca(OCl)2 reacting with HCl, from MnO2 reacting with HCl, or from NaOCl reacting with NH3.
15. A method as in claim 10 wherein the first rapid thermal process is performed at temperature less than about 380 C.
16. A method as in claim 10 wherein the concentration of the nitric acid in the first solution is less than about 10 wt %.
17. A method as in claim 10 wherein the second rapid thermal process is performed at temperature greater than about 300 C.
18. A method as in claim 10 wherein the concentration of the nitric acid in the second solution is less than about 10 wt %.
19. A method as in claim 10 wherein the concentration of the hydrochloric acid in the second solution is less than about 20 wt %.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A chemicals mixing container comprising:
a cylinder having a tubular shaped outer tube, and an end wall which seals one end of the outer tube and in which an ejection hole has preliminarily been formed or is formable and which has an inner wall surface swollen outward;
an elastic partition wall which is placed inside the outer tube so as to be able to define a mixing chamber within the cylinder, and which has such elasticity as to be swollen toward one side counter to the inner wall surface of the end wall; and
an ejection auxiliary member which is placed inside the outer tube and outside the mixing chamber, and which has an end face swollen toward the mixing chamber and moreover which is enabled to press the elastic partition wall against the end wall.
2. The chemicals mixing container as claimed in claim 1, wherein the ejection auxiliary member is formed into a convex shape taking after the inner wall surface of the end wall of the cylinder.
3. The chemicals mixing container as claimed in claim 1, wherein the elastic partition wall and the ejection auxiliary member are formed so as to be integrated together.
4. The chemicals mixing container as claimed in claim 1, wherein
the elastic partition wall has a tubular shaped cylindrical portion which is in contact with an inner wall surface of the outer tube and which extends outward of the mixing chamber, and
the ejection auxiliary member is fitted in the cylindrical portion of the elastic partition wall.
5. The chemicals mixing container as claimed in claim 1, further comprising a dispensing chamber which is communicatable with the mixing chamber.
6. The chemicals mixing container as claimed in claim 2, wherein the elastic partition wall and the ejection auxiliary member are formed so as to be integrated together.
7. The chemicals mixing container as claimed in claim 2, wherein
the elastic partition wall has a tubular shaped cylindrical portion which is in contact with an inner wall surface of the outer tube and which extends outward of the mixing chamber, and
the ejection auxiliary member is fitted in the cylindrical portion of the elastic partition wall.
8. The chemicals mixing container as claimed in claim 2, further comprising a dispensing chamber which is communicatable with the mixing chamber.
9. The chemicals mixing container as claimed in claim 3, further comprising a dispensing chamber which is communicatable with the mixing chamber.
10. The chemicals mixing container as claimed in claim 4, further comprising a dispensing chamber which is communicatable with the mixing chamber.