What is claimed is:
1. A liquid-cooled circuit device, comprising:
a module comprising a module base plate and a circuit element mounted on the module base plate;
a circuit case for housing the module;
a cooling case through which cooling liquid flows, said cooling liquid being in contact with a back face of the module base plate; and
a module supporting having an opening for accommodating the module base plate therein;
wherein said module base plate is placed into said opening of said module supporting plate, edges of the opening and the module base plate are joined by welding to each other without a gap therebetween;
said circuit case is formed with an opening smaller than said module supporting plate;
said module supporting plate is fixed to the circuit case so as to block said opening in said circuit case from outside the circuit case and to cause said circuit element of said module mounted on the module supporting plate to be positioned within the circuit case;
said cooling case is formed with a recess forming a cooling liquid chamber through which the cooling liquid flows; and
said cooling case is fixed to said circuit case so that said recess faces said module supporting plate.
2. A liquid-cooled circuit device, comprising:
a module comprising a module base plate and a circuit element mounted on the module base plate;
a circuit case for housing the module; and
a cooling case through which cooling liquid flows, said cooling liquid being in contact with a back face of the module base plate;
wherein said circuit case is formed with an opening;
said cooling case is formed with a recess forming a cooling liquid chamber through which said cooling liquid passes;
the module base plate is arranged so that the circuit element of the module be positioned inside the circuit case, and joined by welding to either an edge of the opening in said circuit case or an edge of an opening of said recess of said cooling case without a gap therebetween; and
said cooling case is fixed to the circuit case so that said recess faces toward said opening in said circuit case.
3. A liquid-cooled circuit device, comprising:
a module comprising a module base plate and a circuit element mounted on the module base plate; and
a circuit case for housing the module;
wherein: the module base plate is placed within said circuit case so as to partition inside of the circuit case into two chambers, and is joined to an inner face of the circuit case by welding without a gap therebetween;
one of the two chambers formed in said circuit case, on the side where the circuit element of the module is present, forms a circuit accommodating chamber and the other forms a cooling liquid chamber; and
said cooling liquid chamber is formed with an inlet and outlet for cooling liquid flowing in contact with a back face of the module base plate of the module.
4. The liquid-cooled circuit device as claimed in claim 1, wherein said cooling case is detachably fixed to said circuit case.
5. The liquid-cooled circuit device as claimed in claim 1, wherein said cooling liquid chamber has channels formed so that said cooling liquid abuts said back faces of said module base plates substantially vertically.
6. The liquid-cooled circuit device as claimed in claim 2, wherein said cooling liquid chamber has channels formed so that said cooling liquid abuts said back faces of said module base plates substantially vertically.
7. The liquid-cooled circuit device as claimed in claim 3, wherein said cooling liquid chamber has channels formed so that said cooling liquid abuts said back faces of said module base plates substantially vertically.
8. The liquid-cooled circuit device as claimed in claim 4, wherein said cooling liquid chamber has channels formed so that said cooling liquid abuts said back faces of said module base plates substantially vertically.
9. The liquid-cooled circuit device as claimed in claim 1, wherein at least a part of welded portion between said module base plate and mating member is welded by a friction stir welding method utilizing a plastic flow due to friction heat generated by rotation of a rotary tool.
10. The liquid-cooled circuit device as claimed in claim 2, wherein at least a part of welded portion between said module base plate and mating member is welded by a friction stir welding method utilizing a plastic flow due to friction heat generated by rotation of a rotary tool.
11. The liquid-cooled circuit device as claimed in claim 3, wherein at least a part of welded portion between said module base plate and mating member is welded by a friction stir welding method utilizing a plastic flow due to friction heat generated by rotation of a rotary tool.
12. The liquid-cooled circuit device as claimed in claim 4, wherein at least a part of welded portion between said module base plate and mating member is welded by a friction stir welding method utilizing a plastic flow due to friction heat generated by rotation of a rotary tool.
13. A method for manufacturing a circuit device in which circuit elements are mounted on base plates and the base plates are fixed to other members of the circuit device, wherein said base plates and said other members are joined to each other by welding, using a friction stir welding method utilizing a plastic flow due to friction heat generated by rotation of a rotary tool.
14. The method for manufacturing a circuit device as claimed in claim 13, wherein all of said base plates and said other members contain the same metallic element.
15. A circuit device in which circuit elements are mounted on base plates and the base plates are fixed to other members of the circuit device, wherein said base plates and said other members are joined to each other by welding, and crystal grains in portions joined by welding are smaller than original crystal grains of the respective members.
16. A liquid-cooled circuit device comprising: a module having a circuit element and a module base plate on surface of which the circuit element is mounted; a circuit case for accommodating said module; and a cooling liquid chamber for flowing a cooling liquid in contact with a back face of said module base plate of said module, wherein said module base plate of said module is fitted into an opening provided in a member forming said cooling liquid chamber and welded without a gap.
17. The liquid-cooled circuit device as claimed in claim 16, wherein the welding of said module base plate to the opening provided in the member forming said cooling liquid chamber is accomplished via a module supporting plate.
18. The liquid-cooled circuit device as claimed in claim 16, wherein said cooling liquid chamber is formed by a recess in said circuit case isolated by said welding from said circuit case.
19. The liquid-cooled circuit device as claimed in claim 16, wherein said cooling liquid chamber is formed by said cooling case fixed in liquid-tight to said circuit case.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A nitride semiconductor device comprising:
a substrate being capable of epitaxially growing a nitride semiconductor layer thereon;
a semiconductor lamination layer formed on said substrate, and including a channel layer of nitride semiconductor;
a source electrode and a drain electrode formed on said semiconductor lamination layer in ohmic contact with said channel layer;
an insulating layer formed on said semiconductor lamination layer, and having an opening in a gate electrode contact area, a total thickness portion having a flat surface and a total thickness in an area spaced apart from said opening, and a transient portion between said opening and said total thickness portion, a sidewall of said insulating layer facing said opening rising steeply to a partial thickness of the total thickness; and
a T-shaped gate electrode contacting said semiconductor lamination layer in said opening and extending on said insulating film to opposing portions with increased thickness thicker than said partial thickness.
2. The nitride semiconductor device according to claim 1, wherein the partial thickness of said total thickness is in a range of 20% to 80% of said total thickness.
3. The nitride semiconductor device according to claim 1, wherein a thickness at the opening edge of said insulating film is 5 nm or thicker.
4. The nitride semiconductor device according to claim 1, wherein said increased thickness is said total thickness.
5. The nitride semiconductor device according to claim 1, wherein said semiconductor lamination layer includes an i-type GaN layer, an n-type AlGaN layer formed on said i-type GaN layer, and an n-type GaN layer formed on said n-type AlGaN layer, said source electrode and said drain electrode are in ohmic contact with said n-type AlGaN layer, and said gate electrodes is in Schottky contact with said n-type GaN layer.
6. The nitride semiconductor device according to claim 1, wherein said semiconductor lamination layer includes an n-type GaN layer, said source electrode and said drain electrode are in ohmic contact with said n-type GaN layer, and said gate electrodes is in Schottky contact with said n-type GaN layer.
7-12. (canceled)