What is claimed is:
1. A method for modifying body electrical potentials, comprising the steps of:
providing an electrical lead having first and second electrodes;
attaching the first electrode to a skin surface area of a human head; and
attaching the second electrode to another skin surface area of the human head, whereby electrical potentials of the head are modified to remediate psychiatric disorders and enhance optimal brain functioning.
2. The method of claim 1, wherein the first or second electrode comprises a conductive clip.
3. The method of claim 1, wherein the first or second electrode comprises a conductive flat or cup-shaped electrode.
4. The method of claim 1, wherein the electrical lead includes a resistive component for increasing the resistance of the electrical lead.
5. The method of claim 1, wherein the electrical lead includes a diode for restricting the flow of electricity through the lead to a single direction.
6. The method of claim 1, wherein the electrical lead extends between ears of the human head.
7. The method of claim 1, wherein the first electrode is attached to an ear and the second electrode is attached to an area of the scalp or forehead of the human head.
8. The method of claim 7, including a second electrical lead having a first electrode attached to an opposite ear and a second electrode attached to another area of the scalp or forehead of the human head.
9. The method of claim 8, wherein the first electrical lead extends from a left ear to a portion of the scalp or forehead right of a midline of the head, and the second electrical lead extends from the right ear to a portion of the scalp or forehead left of the midline.
10. The method of claim 8, including a retentive member for securely holding the second electrodes in place on the scalp or forehead.
11. A method for modifying body electrical potentials, comprising the steps of:
providing an electrical lead having first and second electrodes and either a resistive component for increasing the resistance of the lead, or a diode for restricting the flow of electricity in one direction;
attaching the first electrode to an ear of a human head; and
attaching the second electrode to another skin surface area of the human head, whereby electrical potentials of the head are modified to remediate psychiatric disorders and enhance optimal brain functioning.
12. The method of claim 11, wherein the first electrode comprises a conductive clip.
13. The method of claim 11, wherein the first or second electrode comprises a conductive flat or cup-shaped electrode.
14. The method of claim 11, wherein the second electrode is attached to an opposite ear of the human head such that the electrical lead extends between the ears of the human head.
15. The method of claim 11, wherein the second electrode is attached to an area of the scalp or forehead of the human head.
16. The method of claim 15, including a second electrical lead having a first electrode attached to an opposite ear and a second electrode attached to another area of the scalp or forehead of the human head.
17. The method of claim 16, wherein the first electrical lead extends from a left ear to a portion of the scalp or forehead right of a midline of the head, and the second electrical lead extends from the right ear to a portion of the scalp or forehead left of the midline.
18. The method of claim 16, including a retentive member for securely holding the second electrodes in place on the scalp or forehead.
19. A method for modifying body electrical potentials, comprising the steps of:
attaching a first electrode of a first electrical lead to a left ear of a human head, and attaching a second electrode of the first electrical lead to a skin surface area of the scalp or forehead right of a midline of the human head; and
attaching a first electrode of a second electrical lead to a right ear of a human head, and attaching a second electrode of the second electrical lead to a skin surface area of the scalp or forehead left of the midline of the human head;
whereby electrical potentials of the head are modified to remediate psychiatric disorders and enhance optimal brain functioning.
20. The method of claim 19, wherein the first electrode of the first and second leads comprises a conductive clip.
21. The method of claim 19, wherein the first or second electrode comprises a conductive flat or cup-shaped electrode.
22. The method of claim 19, including a retentive member for securely holding the second electrodes in place on the scalp or forehead.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-12. (canceled)
13. A semiconductor device manufactured by using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, the semiconductor device being obtained by
forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light,
partitioning the substrate into the individual substrates along the boundaries where the grooves are formed,
immersing the substrate into an acid solution before or after the foregoing partitioning so that deposits of gallium compounds adhering to the substrate are removed, and
sealing the individual substrates with a resin.
14. The semiconductor device according to claim 13, wherein locations irradiated with laser light have grooves formed by irradiation on the side opposite the side on which the semiconductor layers are formed.
15. The semiconductor device according to claim 13, wherein the grooves are formed by performing irradiation with laser light in an oblique direction so as to form quasi V-shaped cross-sections.
16. The semiconductor device according to claim 13, wherein locations irradiated with laser light have grooves formed by irradiation on the side on which the semiconductor layers are formed.
17. The semiconductor device according to claim 13, wherein the acid solution is a solution whose main ingredient is hydrochloric acid or nitric acid.
18. The semiconductor device according to claim 13, wherein the semiconductor device is a light-emitting element.
19. The semiconductor device according to claim 13, wherein the grooves extend to not less than 30% of the thickness of the substrate.
20. The semiconductor device according to claim 18, wherein the light-emitting element has an n-type semiconductor layer and a p-type semiconductor layer formed on top of the substrate.
21. The semiconductor device according to claim 20, wherein a Pt layer and, on top of it, a rhodium layer, are formed in the p-type semiconductor layer region in order to establish an ohmic contact with the p-type semiconductor layer, thereby producing a dual layer structure acting as a reflective film, with a p-type electrode composed of gold formed thereon.
22. The semiconductor device according to claim 20, wherein a Ti layer and, on top of it, a Au layer, are formed in the n-type semiconductor layer region in order to establish an ohmic contact with the n-type semiconductor layer, thereby producing a dual layer structure acting as an n-type electrode.
23. A semiconductor device manufactured by using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, the semiconductor device being obtained by
forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light,
partitioning the substrate into individual substrates along the boundaries where the grooves are formed,
immersing the substrate into an acid solution before or after the foregoing partitioning so that deposits of gallium compounds adhering to the substrate are removed, and
electrically connecting an electrode of at least one selected from the substrate and the semiconductor layers with an another electrode.
24. The semiconductor device according to claim 23, wherein locations irradiated with laser light have grooves formed by irradiation on the side opposite the side on which the semiconductor layers are formed
25. The semiconductor device according to claim 23, wherein the grooves are formed by performing irradiation with laser light in an oblique direction so as to form quasi V-shaped cross-sections.
26. The semiconductor device according to claim 23, wherein locations irradiated with laser light have grooves formed by irradiation on the side on which the semiconductor layers are formed
27. The semiconductor device according to claim 23, wherein the acid solution is a solution whose main ingredient is hydrochloric acid or nitric acid.
28. The semiconductor device according to claim 23, wherein the semiconductor device is a light-emitting element.
29. The semiconductor device according to claim 23, wherein the grooves extend to not less than 30% of the thickness of the substrate.
30. The semiconductor device according to claim 28, wherein the light-emitting element has an n-type semiconductor layer and a p-type semiconductor layer formed on top of the substrate.
31. The semiconductor device according to claim 30, wherein a Pt layer and, on top of it, a rhodium layer, are formed in the p-type semiconductor layer region in order to establish an ohmic contact with the p-type semiconductor layer, thereby producing a dual layer structure acting as a reflective film, with a p-type electrode composed of gold formed thereon.
32. The semiconductor device according to claim 30, wherein a Ti layer and, on top of it, a Au layer, are formed in the n-type semiconductor layer region in order to establish an ohmic contact with the n-type semiconductor layer, thereby producing a dual layer structure acting as an n-type electrode.