1. A method for designing a dummy pattern that is formed in a vacant section of a chip region before a semiconductor substrate including the chip region that has a device graphics data section in which a circuit element pattern is formed and the vacant section in which the circuit element pattern is not formed is planarized by a chemical mechanical polishing process, the method comprising:
setting an overall dummy section on the entire chip region;
setting a mesh section on the entire overall dummy section;
dividing the overall dummy section by the mesh section so that a plurality of rectangular dummy patterns is formed on the entire chip region after the mesh section is set; and
removing or transforming a part of the rectangular dummy patterns, thereby uniformizing a density of the dummy pattern in the chip region.
2. The method for designing a dummy pattern according to claim 1, wherein
the uniformizing of the density of the dummy pattern includes:
setting a clearance section surrounding the device graphics data section;
setting a dummy formation prohibition region on a part of the vacant section;
extracting four rectangular dummy patterns based on a location of the rectangular dummy patterns relative to three regions that are the device graphics data section, the clearance section, and the dummy formation prohibition region, after the dummy formation prohibition region is set; and
performing four-step processes in accordance with the four rectangular dummy patterns.
3. The method for designing a dummy pattern according to claim 2, wherein
a first step of the four-step processes includes:
extracting the rectangular dummy pattern that is perfectly overlapped with one or two of the three regions; and
removing the rectangular dummy pattern that has been extracted.
4. The method for designing a dummy pattern according to claim 2, wherein
a second step of the four-step processes includes:
extracting the rectangular dummy pattern whose three sides are in contact with the clearance section or the dummy formation prohibition region;
removing a potion of the extracted rectangular dummy pattern, that is overlapped with the clearance section or the dummy formation prohibition region; and
extending the rectangular dummy patterns that remain after the portion has been removed, to an adjacent rectangular dummy pattern so that these rectangular dummy patterns are synthesized and so that a new dummy pattern is formed.
5. The method for designing a dummy pattern according to claim 2, wherein
a third step of the four-step processes includes:
extracting the rectangular dummy pattern whose four sides are in contact with the clearance section or the dummy formation prohibition region;
extending the rectangular dummy patterns that have been extracted to an adjacent rectangular dummy pattern so that these rectangular dummy patterns are synthesized; and
removing a potion at which the rectangular dummy patterns that have been synthesized overlap the clearance section or the dummy formation prohibition region so that a new dummy pattern is formed.
6. The method for designing a dummy pattern according to claim 2, wherein
a fourth step of the four-step processes includes:
extracting the rectangular dummy pattern whose two sides are in contact with the clearance section or the dummy formation prohibition region;
extending the rectangular dummy patterns that have been extracted to an adjacent rectangular dummy pattern so that these rectangular dummy patterns are synthesized; and
removing a potion at which the rectangular dummy patterns that have been synthesized overlap the clearance section or the dummy formation prohibition region so that a new dummy pattern is formed.
7. An exposure mask comprising a dummy pattern that is disposed by the method for designing a dummy pattern according to claim 1.
8. A semiconductor device comprising a dummy pattern that is disposed by the method for designing a dummy pattern according to claim 1.
9. A method for manufacturing a semiconductor device, comprising a forming a dummy pattern that is disposed by the method for designing a dummy pattern according to claim 1.
10. A storage medium having a dummy pattern design program stored therein for designing a dummy pattern that is formed in a vacant section of a chip region before a semiconductor substrate including the chip region that has a device graphics data section in which a circuit element pattern is formed and the vacant section in which the circuit element pattern is not formed is planarized by a chemical mechanical polishing process, and a computer which executes the dummy pattern design program, including:
extracting the chip region and the device graphics data;
setting a region on which the dummy pattern is not formed;
forming an overall dummy on the entire chip region;
forming a mesh section for forming the overall dummy in a rectangular form;
forming the overall dummy in a rectangular form in accordance with the mesh section so that a rectangular dummy pattern is formed;
removing an unnecessary rectangular dummy pattern;
perforating a process for extracting, synthesizing, and removing with regard to rectangular dummy pattern with contact on three sides;
performing a process for extracting, synthesizing, and removing with regard to rectangular dummy pattern with contact on four sides;
performing a process for extracting, synthesizing, and removing with regard to rectangular dummy pattern with contact on two sides; and
removing an unnecessary definition section.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for the production of a visible, UV, or IR radiation (9), within a spectral or wide band wavelength range, either pulsed or continuous, comprising the steps of:
creating at least one first chamber (3) closed by an external wall (2) with a substantially transparent material in which a material (4) is disposed capable of being excited by means of microwaves irradiation, said at least one chamber (3) having an internal wall (1) that defines at least one second chamber (5) separated from the at least one first chamber and accessible from the outside;
introducing in said at least one second chamber (5) at least one source (6) of microwave radiation (8), and
exciting said at least one source (6) according to a predetermined function of power and frequency, said at least one source (6) emitting a radiation (8) with subsequent excitation of said material in said at least one first chamber (3).
2. Method according to claim 1, wherein said at least one first chamber (3) is obtained by means of introduction of a first bulb (1) in a second bulb (2), in order to form said at least one first chamber (3) closed between the walls of the first (1) and of the second bulb (2), the walls of the first bulb (1) defining said at least one second chamber (5).
3. Method according to claim 1, wherein said source is a thin antenna made of co-axial conductors (6), placed in said at least one second chamber (5).
4. Method according to claim 1, wherein said excitable material (4) is selected from the group consisting of gas, vapor, dust, and liquid, capable of emitting radiation by activation.
5. Method according to claim 1, comprising a plurality of said first chambers, excited by the source (6).
6. Method according to claim 1, comprising a plurality of sources for exciting one or more first chambers.
7. A lamp without electrodes, for the production of a visible, UV, or IR radiation (9), within a spectral or wide band wavelength range, pulsed or continuous, comprising:
an external wall (2) of material substantially transparent to a visible, UV or IR radiation, defining a chamber (3) having therein a material (4) capable of being excited by means of microwave irradiation (8),
an internal wall (1) that separates said chamber (3) from a second chamber (5) accessible from the outside;
at least one source (6) of microwave radiation (8) inserted into said recess (5), and
means for exciting (7) said at least one source (6) according to a predetermined function of power and frequency.
8. Lamp according to claim 7, comprising a first bulb (1) placed in a second bulb (2) defining said first chamber (3) therebetween, the walls of the first bulb (1) defining said second chamber (5).
9. Lamp according to claim 7, wherein said source is a thin antenna (6) made of co-axial conductors, disposed in said second chamber (5).
10. Lamp according to claim 7, wherein said excitable material (4) is selected from the group consisting of gas, vapor, dust, and liquid, capable of emitting radiation by activation, placed in said first chamber (3).
11. Lamp according to claim 7, wherein a plurality of adjacent first chambers (3, 3\u2032) are provided, excited by the source (6) present in said recess (5).
12. Lamp according to claim 7, wherein a plurality sources (6, 6\u2032) are provided that excite the first chamber (3) or a plurality of adjacent first chambers (3, 3\u2032).