1. A system for generating electricity from steam, comprising:
a steam source for providing steam at a source pressure, the source being communicated with a steam load which requires steam at a load pressure lower than the source pressure, the steam load comprising a chiller;
a flow line connected between the steam source and the steam load and having a pressure reduction valve adapted to reduce steam pressure from the source pressure to the load pressure; and
a pressure reduction valve bypass circuit bypassing the pressure reduction valve and including a steam turbine system operated by steam from the steam source at source pressure for converting a portion of the source pressure to electric power and producing steam at the load pressure, the turbine being communicated to provide power to an electric power load.
2. The system of claim 1, wherein the turbine system comprises a turbine and a motor, the turbine being mounted vertically above the motor and operatively associated with the motor whereby steam drives the turbine and the turbine drives the motor to generate electric current.
3. The system of claim 2, wherein the motor and the turbine each have rotatable elements and wherein the rotatable elements rotate around substantially vertical axes of rotation.
4. The system of claim 2, wherein the turbine is a shrouded wheel turbine.
5. The system of claim 1, wherein the turbine system comprises a two stage turbine.
6. The system of claim 1, wherein the turbine system has a pressure reduction ratio of between about 2 and about 10.
7. The system of claim 1, wherein the turbine system has an efficiency of at least about 60%.
8. The system of claim 1, wherein the steam load comprises a parallel arrangement of said chiller and a heater.
9. The system of claim 1, wherein the turbine system has a nominal rating of at least about 150 kW.
10. The system of claim 1, wherein the turbine system has a nominal rating of at least about 275 kW.
11. The system of claim 1, wherein the chiller is an absorptive chiller and wherein the power load comprises an electric chiller.
12. The system of claim 1, wherein the power load is selected from the group consisting of electric motors, pumps, compressors, fans and combinations thereof
13. The system of claim 1, further comprising a control unit communicated with an inlet valve to the turbine for controlling flow to the inlet to maintain a desired steam pressure.
14. The system of claim 13, wherein the desired steam pressure is the load pressure.
15. A method for generating electric current from steam, comprising the steps of:
providing a steam load requiring steam at a load pressure, the steam load comprising a chiller;
communicating the steam load with a source of steam at a pressure higher than the load pressure;
passing steam from the steam source to the steam load through a pressure reduction valve bypass circuit including a steam turbine system for converting steam to electric current and producing steam at the load pressure, the turbine system being communicated to provide electric current to an electric power load.
16. The method of claim 15, wherein the chiller is an absorptive chiller.
17. The method of claim 15, wherein the steam turbine system comprises a two-stage turbine.
18. The method of claim 15, wherein the steam turbine system has a pressure reduction ratio between about 2 and about 10.
19. The method of claim 15, wherein the turbine system has an efficiency of at least about 60%.
20. The method of claim 15, wherein the turbine system has a nominal rating of at least about 150 kW.
21. The method of claim 15, wherein the turbine system has a nominal rating of at least about 275 kW.
22. The method of claim 15, wherein the electric power load is selected from the group consisting of electric motors, pumps, compressors, fans and combinations thereof.
23. The system of claim 15, wherein the chiller is an absorptive chiller and wherein the power load comprises an electric chiller.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A vapor phase deposition apparatus comprising:
a chamber;
a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit;
a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate;
a first flow path configured to supply a gas to form a film into the chamber; and
a second flow path configured to exhaust the gas from the chamber.
2. The vapor phase deposition apparatus according to claim 1, wherein
a material of the first support unit uses a material having a heat conductivity higher than that of a material used in the second support unit.
3. The vapor phase deposition apparatus according to claim 2, wherein
silicon carbide (SiC) is used as a material of the first support unit.
4. The vapor phase deposition apparatus according to claim 3, wherein
silicon nitride (Si3N4) is used as a material of the second support unit.
5. The vapor phase deposition apparatus according to claim 2, wherein
a notched portion is formed on at least one upper surface side of the first support unit and the second support unit at a position which the first support unit and the second support unit are connected to each other.
6. The vapor phase deposition apparatus according to claim 2, wherein
a notched portion is formed in the first support unit.
7. The vapor phase deposition apparatus according to claim 6, wherein
the notched portion is formed in a surface being in contact with the back side surface of the substrate.
8. The vapor phase deposition apparatus according to claim 1, wherein
a notched portion is formed in the first support unit.
9. The vapor phase deposition apparatus according to claim 8, wherein
the notched portion is formed in a surface being in contact with the back side surface of the substrate.
10. The vapor phase deposition apparatus according to claim 1, wherein
the first support unit has an annular projecting portion extending on the back side at an outer peripheral portion, and
the second support unit has an opening formed on an inner peripheral side, is in contact with a distal end portion of the projecting portion on a bottom surface of the opening to support the first support unit.
11. The vapor phase deposition apparatus according to claim 1, wherein
the first support unit has a plurality of projecting portions formed on a back surface;
the second support unit has an opening formed on an inner peripheral side, is in contact with a distal end portion of the projecting portion on a bottom surface of the opening to support the first support unit.
12. The vapor phase deposition apparatus according to claim 11, wherein
the first support unit further has a plurality of second projecting portions which are in contact with a side surface of the opening when the first support unit substantially moves in a horizontal direction and which extends to an outer peripheral side.
13. The vapor phase deposition apparatus according to claim 11, wherein
the second support unit has a plurality of second projecting portions which are in contact with a side surface of the first support unit when the first support unit substantially moves in a horizontal direction and which extend to an inner peripheral side.
14. The vapor phase deposition apparatus according to claim 1, wherein
the second support unit has an opening formed on an inner peripheral side and a plurality of projecting portions formed on a bottom surface of the opening, and is in contact with a back surface of the first support unit at a distal end portion of the projecting portion to support the first support unit.
15. The vapor phase deposition apparatus according to claim 14, wherein
the first support unit has a plurality of second projecting portions which are in contact with a side surface of the opening when the first support unit substantially moves in a horizontal direction and which extend to an outer peripheral side.
16. The vapor phase deposition apparatus according to claim 14, wherein
the second support unit has a plurality of second projecting portions which are in contact with a side surface of the first support unit when the first support unit substantially moves in a horizontal direction and which extend to an inner peripheral side.
17. The vapor phase deposition apparatus according to claim 1, wherein
the first and second support units are formed as physically different parts, and the first support unit is placed on a part of the second support unit.
18. A vapor phase deposition apparatus comprising:
a chamber;
a support table arranged in the chamber and formed a first opening which a substrate is placed on its bottom surface, and a second opening what is an annular opening and is located on an outer peripheral side of the first opening and inside an outer peripheral side;
a heat source arranged at a position having a distance from the back side surface of the substrate, the distance being larger than a distance between the substrate and the support table, and which heats the substrate;
a first flow path configured to supply a gas to form a film into the chamber; and
a second flow path configured to exhaust the gas from the chamber.
19. The vapor phase deposition apparatus according to claim 18, wherein
a thickness of a portion of the support table where the second opening is formed is smaller than a thickness of an inner portion of the second opening.
20. A support table for placing a substrate thereon in a chamber held in a vapor phase deposition apparatus, comprising:
a first support unit being in contact with the substrate; and
a second support portion connected to the first support portion and made of a material having a heat conductivity lower than that of a material used in the first support unit.