1. A semiconductor device with an active surface, the semiconductor device comprising:
at least a connecting element disposed on the active surface;
at least a bump disposed on the connecting element and electrically connected to the active surface by the connecting element, wherein the bump comprises a pillar part disposed on the connecting element and a top part disposed on the top of the pillar part, the pillar part has a coplanar first dimension and a second dimension for defining a uniform cross-sectional area parallel to the active surface, the first dimension is longer than 1.2 times the second dimension, the top part will melt under a pre-determined temperature, and the pillar part will not melt under the pre-determined temperature;
wherein the material of the pillar part is selected from a group consisting of copper (Cu), gold (Au), nickel (Ni) or a combination thereof, and the top part is composed of solder consisting of tin (Sn), copper (Cu), silver (Ag), lead (Pb) or a combination thereof and extending from the top of the pillar part.
2. A semiconductor device with an active surface, the semiconductor device comprising:
a plurality of bonding pads disposed on the active surface; and
a plurality of bumps disposed on and electrically connected to the corresponding bonding pads, wherein each of the bumps comprises a pillar part and a top part disposed on the top of the pillar part, wherein the pillar part is disposed on the corresponding bonding pad at a contacting position, the contacting position having a contacting center, and wherein the center of each of the bumps is not aligned vertically with the contacting center;
wherein each of the bumps covers the corresponding bonding pad and extends from a position of the bonding pad in a direction parallel to the active surface, the length of the bump in the extended direction is longer than 1.2 times the width of the bump and the centers of the bump and the corresponding bonding pad are not aligned vertically with each other.
3. The semiconductor device according to claim 2, wherein each of the bumps covers the corresponding bonding pad and extends onto the active surface, and the area of the part of the active surface covered by each of the bumps is larger than 1.2 times the area of the corresponding bonding pad.
4. The semiconductor device according to claim 2, wherein the bonding pads are arranged in a line, parallel to the active surface and the bumps alternately extend from the bonding pads in opposite directions parallel to the active surface and perpendicular to the line formed by the bonding pads.
5. The semiconductor device according to claim 2, wherein the plurality of bumps correspond to a plurality of contact points disposed on a flip-chip carrier, wherein the top part of each of the bumps is connected to the corresponding contact point and the center of the bonding pad is not aligned vertically with the center of the contact point.
6. The semiconductor device according to claim 2, wherein the plurality of bumps correspond to a plurality of contact points disposed on a flip-chip carrier and wherein the top part of each of the bumps is connected to a corresponding contact point and the center of each bump is aligned vertically with the center of the corresponding contact point.
7. The semiconductor device according to claim 2, wherein the bonding pads disposed on the active surface are arranged in at least two lines parallel to the active surface or a non-straight line.
8. A semiconductor device with an active surface, the semiconductor device comprising:
at least a bonding pad disposed on the active surface; and
at least a bump disposed on the bonding pad and electrically connected to the active surface by the bonding pad, wherein the bump comprises a pillar part disposed on the bonding pad and a top part disposed on the top of the pillar part, the pillar part has a coplanar first dimension and a second dimension both parallel to the active surface and perpendicular to each other, the first dimension is longer than 1.2 times the second dimension, the top part will melt under a pre-determined temperature, and the pillar part will not melt under the pre-determined temperature.
9. The semiconductor device according to claim 8, wherein the bump has a substantially I-shaped, elliptical-shaped, rectangular-shaped or T-shaped cross-sectional area parallel to the active surface.
10. The semiconductor device according to claim 8, wherein the bump covers the bonding pad and extends onto the active surface, the area of the active surface covered by the bump is larger than 1.2 times the area of the bonding pad, and the bonding pad has a minimum dimension smaller than 80 microns.
11. The semiconductor device according to claim 8, wherein the material of the pillar part is selected from the group of materials consisting of copper (Cu), gold (Au), nickel (Ni) and combinations thereof, and the top part is composed of solder consisting of tin (Sn), copper (Cu), silver (Ag), lead (Pb) or a combination thereof.
12. A semiconductor device with an active surface, the semiconductor device comprising:
a plurality of bonding pads disposed on the active surface; and
a plurality of bumps each disposed on and electrically connected to a corresponding one of the bonding pads, wherein each of the bumps comprises a pillar part disposed on the bonding pad and a top part disposed on the top of the pillar part;
wherein each of the bumps covers the corresponding bonding pad and extends from the position of the bonding pad in a direction parallel to the active surface, and the length of the bump in the extended direction is longer than 1.2 times the width of the bump;
wherein the plurality of bumps corresponds to a plurality of contact points disposed on a package substrate and the top part of each bump is connected to, a corresponding one of contact points;
wherein the pitch between the contact points is larger than the pitch between the bonding pads on the active surface.
13. The semiconductor device according to claim 12, wherein the plurality of bumps correspond to a plurality of contact points disposed on a package substrate, and wherein the top part of each bump is connected to the corresponding contact point and the center of the bonding pad is not aligned vertically with the center of the contact point.
14. The semiconductor device according to claim 12, wherein the plurality of bumps correspond to a plurality of contact points disposed on a package substrate, and wherein the top part of each bump is connected to the corresponding contact point and the center of the bump is aligned vertically with the center of the contact point.
15. The semiconductor device according to claim 12, wherein each of the bumps covers the corresponding bonding pad and extends onto the active surface, and the area of the part of the active surface covered by each of the bumps is larger than 1.2 times the area of the corresponding bonding pad.
16. The semiconductor device according to claim 12, wherein the bonding pads are arranged along a pad line extending in a pad direction, the bumps extending from the bonding pads along bump lines substantially parallel to each other, the bump lines extending from the bonding pads in a same direction.
17. The semiconductor device according to claim 12, wherein the bonding pads are arranged in a line parallel to the active surface and the bumps alternately extend from successive bonding pads in opposite directions parallel to the active surface and perpendicular to the line formed by the bonding pads.
18. The semiconductor device according to claim 12 wherein the distance between the adjacent contact points is larger than the distance between the adjacent bonding pads disposed on the active surface.
19. The semiconductor device according to claim 12, wherein the bonding pads have a minimum dimension smaller than 80 microns.
20. A semiconductor device with an active surface, the semiconductor device comprising:
a plurality of bonding pads disposed on the active surface; and
a plurality of bumps disposed and electrically connected to the corresponding bonding pads, wherein each of the bumps comprises a pillar part and a top part disposed on the top of the pillar part, wherein the pillar part is disposed on the corresponding bonding pad at a contacting position, the contacting position having a contacting center, and wherein the center of each of the bumps is not aligned vertically with the contacting center;
wherein each of the bump covers the corresponding bonding pad and extends from the position of the bonding pad in a direction parallel to the active surface, and the length of the bump in the extended direction is longer than 1.2 times the width of the bump; and
wherein the plurality of bumps corresponds to a plurality of contact points disposed on a package substrate, the top part of each bump is connected to the corresponding contact point, and the center of each bump is not aligned vertically with the center of the corresponding contact point.
21. The semiconductor device according to claim 20, wherein the center of each bonding pad is not aligned vertically with the center of the corresponding contact point.
22. The semiconductor device according to claim 20, wherein each of the bumps covers the corresponding bonding pad and extends onto the active surface, and the area of the part of the active surface covered by each of the bumps is larger than 1.2 times the area of the corresponding bonding pad.
23. The semiconductor device according to claim 20, wherein the bonding pads are arranged along a line, the extending directions of the bumps extended from the bonding pads are substantially parallel to each other, and the bumps extend from the bonding pads in the same direction.
24. The semiconductor device according to claim 20, wherein the bonding pads are arranged in a line parallel to the active surface and the bumps alternately extend from the bonding pads in opposite directions parallel to the active surface and perpendicular to the line formed by the bonding pads.
25. The semiconductor device according to claim 20, wherein the distance between the adjacent contact points is larger than the distance between the adjacent bonding pads disposed on the active surface.
26. The semiconductor device according to claim 20, wherein the bonding pads have a minimum dimension smaller than 80 microns.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A buoyancy engine comprising:
a divider comprising a top and a bottom and configured to separate a liquid environment from a gas environment;
a reservoir aperture located in said divider;
a rotational device connected to said divider;
a segmented chain comprising a plurality of linear segments, wherein said plurality of linear segments individually comprise an inner surface, an outer surface, a leading surface and a trailing surface, wherein said leading surface comprises a convex shape and wherein said trailing surface comprises a substantially mirrored concave shape, wherein said segmented chain rotates about said reservoir aperture and said rotational device;
wherein said segmented chain is configured to separate during linear vertical travel; and
wherein a trailing surface of a first segment of said plurality of segments is configured to compress with a leading surface of second segment of plurality of segments to form said substantially solid surface in response to transitioning through said reservoir aperture, wherein said first segment is adjacent to said second segment in said segmented chain.
2. The buoyancy engine of claim 1, wherein said reservoir aperture comprises a segmented gasket located about the perimeter of said reservoir aperture.
3. The buoyancy engine of claim 2, wherein said segmented gasket comprises at least one a plurality of rotatable segments, rollers, or ball-bearings.
4. The buoyancy engine of claim 1, wherein said reservoir aperture comprises a solid gasket located about the perimeter of said reservoir aperture, wherein said solid gasket is configured to create a seal between said segmented chain and said reservoir aperture.
5. The buoyancy engine of claim 1, wherein said segmented chain is configured to create sufficient segment-to-segment contact such that substantially no liquid passes from the liquid environment to the gas environment.
6. The buoyancy engine of claim 1, further comprising a plurality of segmented chains operating about said divider.
7. The buoyancy engine of claim 1, wherein said segmented chain generates rotary motion about said divider due to an upward buoyant force in said liquid environment and a downward gravitational force in said gas environment.
8. The buoyancy engine of claim 1, wherein said rotational device is a second reservoir aperture.
9. A segmented chain in a buoyancy engine, said segmented chain comprising:
a plurality of segments, wherein said plurality of segments individually comprise an inner surface, an outer surface, a leading surface and a trailing surface, wherein said leading surface comprises a convex shape and wherein said trailing surface comprises a substantially mirrored concave shape;
wherein said plurality of segments are linearly connected along the outer surface;
wherein said segmented chain passes through a reservoir aperture of a reservoir, and wherein a trailing surface of a first segment of said plurality of segments is configured to compress with a leading surface of second segment of plurality of segments to form a substantially solid structure in response to transitioning between a liquid environment and a gas environment, wherein said first segment is adjacent to said second segment in said segmented chain.
10. The segmented chain of claim 9, wherein said plurality of segments is configured to separate in response to said segmented chain travels in an approximately linear path.
11. The segmented chain of claim 9, wherein said segmented chain comprises at least one of fiberglass, wood, foam, metal, carbon fiber, plastic, or rubber.
12. The segmented chain of claim 9, wherein said segmented chain comprises a foam composite material encasing at least one of a continuous chain or continuous cable.
13. A method comprising:
generating a rotary motion using a segmented chain in a buoyancy engine, wherein said segmented chain comprises a plurality of segments, wherein said plurality of segments individually comprise an inner surface, an outer surface, a leading surface and a trailing surface, wherein said leading surface comprises a convex shape and wherein said trailing surface comprises a substantially mirrored concave shape;
designing said plurality of segments to separate during linear travel;
designing said plurality of segments to form a substantially solid surface in response to said segmented chain is transitioning between a liquid environment and a gas environment;
transitioning said segmented chain through a reservoir aperture, wherein a trailing surface of a first segment of said plurality of segments is configured to compress with a leading surface of second segment of plurality of segments to form said substantially solid surface in response to transitioning between the liquid environment and the gas environment, wherein said first segment is adjacent to said second segment in said segmented chain; and
wherein said rotary motion comprises an upward buoyant force in said liquid environment and a downward gravitational force in said gas environment.
14. The method of claim 13, further comprising producing mechanical energy using a wheel configured to rotate during operation of said buoyancy engine.
15. The method of claim 13, further comprising producing electrical energy using at least one of magnets or stators.
16. The method of claim 13, wherein said reservoir aperture comprises at least one of polyethylene, polytetrafluoroethene, or polytetrafluoroethylene.
17. The method of claim 13, further comprising facilitating the transitioning said segmented chain through said reservoir aperture using a rotatable gasket.