1. A method for producing a dual-array-type scintillator array comprising the steps of
(1) forming a first scintillator stick comprising first scintillator cell portions arranged like a comb by providing a first scintillator substrate with pluralities of grooves, and then cutting said first scintillator substrate in a direction perpendicular to said grooves;
(2) forming a second scintillator stick comprising second scintillator cell portions arranged like a comb by providing a second scintillator substrate having a different composition from that of said first scintillator substrate with pluralities of grooves, and then cutting said second scintillator substrate in a direction perpendicular to said grooves;
(3) arranging and fixing plural sets of said first and second scintillator sticks with said first and second scintillator cell portions downward onto a support plate;
(4) removing base portions from said first and second scintillator sticks by grinding to expose the grooves of said first and second scintillator sticks on the surface, thereby obtaining plural sets of first cell arrays and second cell arrays arranged in parallel, each first cell array being obtained from a line of the first scintillator cells, and each second cell array being obtained from a line of the second scintillator cells;
(5) forming an integral resin-cured assembly comprising plural sets of said first and second cell arrays arranged in parallel by filling at least grooves and gaps of said first and second cell arrays with a resin for a reflector, curing said resin, and then removing said support plate; and
(6) cutting a resin layer between adjacent sets of said first and second cell arrays to divide said resin-cured assembly to sets of said first and second cell arrays.
2. The method for producing a scintillator array according to claim 1, wherein both surfaces of said resin-cured assembly are ground to form an integral cell array assembly having a predetermined thickness, from which said first cell arrays and said second cell arrays are exposed, and then one surface of said cell array assembly, from which said first and second cell arrays are exposed, is coated with the resin for a reflector.
3. The method for producing a scintillator array according to claim 2, wherein after one surface of said cell array assembly, from which said first and second cell arrays are exposed, is coated with the resin for a reflector, a coating layer of said resin for a reflector is ground to a predetermined thickness.
4. The method for producing a scintillator array according to claim 1, wherein said first and second scintillator sticks are heat-treated.
5. The method for producing a scintillator array according to claim 1, wherein each of said first and second scintillator sticks has a pair of positioning grooves on both sides of said grooves, wherein a first spacer is inserted into each positioning groove of said first and second scintillator sticks; wherein a second spacer is disposed between said first scintillator stick and said second scintillator stick in each set; and wherein a third spacer is disposed between said first scintillator stick and said second scintillator stick in adjacent sets.
6. A method for producing a dual-array-type scintillator array comprising the steps of
(1) forming a first scintillator stick comprising first scintillator cell portions arranged like a comb by providing a first scintillator substrate with pluralities of grooves, and then cutting said first scintillator substrate in a direction perpendicular to said grooves;
(2) forming a second scintillator stick comprising second scintillator cell portions arranged like a comb by providing a second scintillator substrate having a different composition from that of said first scintillator substrate with pluralities of grooves, and then cutting said second scintillator substrate in a direction perpendicular to said grooves;
(3) arranging and fixing plural sets of said first and second scintillator sticks with said first and second scintillator cell portions upward onto a support plate;
(4) forming an integral resin-cured assembly comprising said first and second scintillator sticks by filling at least grooves and gaps of said first and second scintillator sticks with a resin for a reflector, curing said resin, and then removing said support plate;
(5) removing base portions from said first and second scintillator sticks by grinding, to form an integral cell array assembly comprising plural sets of first cell arrays and second cell arrays arranged in parallel, each first cell array being obtained from said first scintillator cell portions, and each second cell array being obtained from said second scintillator cell portions; and
(6) cutting a resin layer between adjacent sets of said first and second cell arrays to divide said cell array assembly to sets of said first and second cell arrays.
7. The method for producing a scintillator array according to claim 6, wherein both surfaces of said resin-cured assembly are ground to form a cell array assembly having a predetermined thickness, from which said first cell arrays and said second cell arrays are exposed, and then one surface of said cell array assembly, from which said first and second cell arrays are exposed, is coated with the resin for a reflector.
8. The method for producing a scintillator array according to claim 7, wherein a coating layer of said resin for a reflector is ground to a predetermined thickness.
9. The method for producing a scintillator array according to claim 6, wherein said first and second scintillator sticks are heat-treated.
10. The method for producing a scintillator array according to claim 6, wherein each of said first and second scintillator sticks has a pair of positioning grooves on both sides of said grooves; wherein a first spacer is inserted into each positioning groove of said first and second scintillator sticks; wherein a second spacer is disposed between said first scintillator stick and said second scintillator stick in each set; and
wherein a third spacer is disposed between said first scintillator stick and said second scintillator stick in adjacent sets.
11. The method for producing a scintillator array according to claim 10, wherein each of said second and third spacers has a flat, large-area portion disposed between adjacent scintillator sticks, and a vertical portion extending from said large-area portion above the upper surfaces of said first and second scintillator sticks; and wherein the vertical portions of said second spacers and the vertical portions of said third spacers partially have different colors.
12. The method for producing a scintillator array according to claim 10, wherein the vertical portions of said second and third spacers have different heights andor widths.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A wafer chuck, comprising:
a main body;
a dielectric layer disposed over the main body;
an electrode, embedded in the dielectric layer, configured to generate an electrostatic field for retaining a wafer; and
a thermal conductive layer embedded in the main body or the dielectric layer,
wherein the thermal conductive layer has a lateral thermal conductivity and a vertical thermal conductivity, and the lateral thermal conductivity is greater than the vertical thermal conductivity.
2. The wafer chuck as claimed in claim 1, wherein the thermal conductive layer comprises graphene.
3. The wafer chuck as claimed in claim 1, wherein the lateral thermal conductivity is in a range from about 100 times to 200 times greater than the vertical thermal conductivity.
4. The wafer chuck as claimed in claim 1, wherein the dielectric layer has an upper surface, the thermal conductive layer is between the upper surface and the electrode when the thermal conductive layer is embedded in the dielectric body.
5. The wafer chuck as claimed in claim 1, wherein the thermal conductive layer is between the electrode and the main body when the thermal conductive layer is embedded in the dielectric body.
6. The wafer chuck as claimed in claim 1, wherein when the thermal conductive layer is embedded in the dielectric layer, the thermal conductive layer comprises:
a thermal conductive material embedded in the dielectric layer; and
a boundary material configured to bond the thermal conductive material and the dielectric layer,
wherein the thermal conductive material comprises graphene, and the boundary material comprises metal.
7. The wafer chuck as claimed in claim 1, wherein when the thermal conductive layer is embedded in the main body, the thermal conductive layer comprises:
a thermal conductive material embedded in the main body; and
a boundary material configured to bond the thermal conductive material and the main body,
wherein the thermal conductive material comprises graphene, and the boundary material comprises metal.
8. The wafer chuck as claimed in claim 1, further comprising a heater, embedded in the main body, configured to heat the main body, wherein the thermal conductive layer is between the dielectric layer and the heater when the thermal conductive layer is embedded in the main body.
9. The wafer chuck as claimed in claim 1, wherein the main body comprises a liquid channel, and the thermal conductive layer is between the dielectric layer and the liquid channel when the thermal conductive layer is embedded in the main body.
10. A wafer chuck, comprising:
a main body;
a dielectric layer disposed over the main body; and
a thermal conductive layer embedded in the dielectric layer,
wherein the thermal conductive layer is configured to generate an electrostatic field for retaining a wafer,
wherein the thermal conductive layer has a lateral thermal conductivity and a vertical thermal conductivity, and the lateral thermal conductivity is greater than the vertical thermal conductivity.
11. The wafer chuck as claimed in claim 10, wherein the thermal conductive layer comprises graphene.
12. The wafer chuck as claimed in claim 10, wherein the lateral thermal conductivity is in a range from about 100 times to 200 times greater than the vertical thermal conductivity.
13. The wafer chuck as claimed in claim 10, wherein the thermal conductive layer comprises:
a thermal conductive material embedded in the dielectric layer; and
a boundary material configured to bond the thermal conductive material and the dielectric layer,
wherein the thermal conductive material comprises graphene, and the boundary material comprises metal.
14. The wafer chuck as claimed in claim 10, further comprising a heater, embedded in the main body, configured to heat the main body.
15. The wafer chuck as claimed in claim 10, wherein the main body comprises a liquid channel, for a liquid flowing therethrough, and the liquid is configured to adjust a temperature of the main body.
16. A wafer chuck, comprising:
a main body;
a dielectric layer disposed over the main body;
an electrode, embedded in the dielectric layer, configured to generate an electrostatic field for retaining a wafer; and
a thermal conductive layer between the main body and the dielectric layer, configured to bond the main body and the dielectric layer,
wherein the thermal conductive layer has a lateral thermal conductivity and a vertical thermal conductivity, and the lateral thermal conductivity is greater than the vertical thermal conductivity.
17. The wafer chuck as claimed in claim 16, wherein the thermal conductive layer comprises graphene, and the lateral thermal conductivity is in a range from about 100 times to 200 times greater than the vertical thermal conductivity.
18. The wafer chuck as claimed in claim 16, wherein the thermal conductive layer comprises:
a thermal conductive material between the main body and the dielectric layer;
an upper boundary material configured to bond the thermal conductive material and the dielectric layer; and
a lower boundary material configured to bond the thermal conductive material and the main body,
wherein the thermal conductive material comprises graphene, and the upper and lower boundary materials comprise metal.
19. The wafer chuck as claimed in claim 16, further comprising a heater, embedded in the main body, configured to heat the main body.
20. The wafer chuck as claimed in claim 16, wherein the main body comprises a liquid channel for a liquid flowing therethrough, and the liquid is configured to adjust a temperature of the main body.