1. A method of fabricating an active layer of a thin film transistor, comprising:
providing a substrate;
preparing a semiconductor precursor solution using a liquid process;
applying the semiconductor precursor solution on the substrate to form a semiconductor precursor thin film; and
irradiating a portion of the semiconductor precursor thin film with a light source to remove residual solvent in the semiconductor precursor thin film and transform the portion of the semiconductor precursor thin film into an active semiconductor layer having semiconductor property, wherein the semiconductor precursor thin film which is not irradiated by the light source is remained on the substrate.
2. The method as claimed in claim 1, wherein the light source has a wavelength between 5 nm and 750 nm and an energy between 0.01 mjcm2 and 1200 mjcm2.
3. The method as claimed in claim 1, wherein the liquid process comprises sol-gel, chemical bath deposition, photo-chemical deposition, or evenly distributing semiconductor nano particles into solvent.
4. The method as claimed in claim 1, wherein the step of applying the semiconductor precursor thin film comprises spin-coating, inkjet printing, drop-printing, casting, micro-contact, micro-stamp, or dipping.
5. The method as claimed in claim 1, further comprising a step of performing a soft baking before irradiating the semiconductor precursor thin film with the light source.
6. The method as claimed in claim 1, further comprising a step of removing the semiconductor precursor thin film not irradiated by the light source after forming the semiconductor active layer.
7. The method as claimed in claim 1, further comprising a step of providing a mask after forming the semiconductor precursor thin film to serve as a mask when irradiating the semiconductor precursor thin film with the light source.
8. The method as claimed in claim 1, wherein the semiconductor precursor thin film comprises an II-VI compound semiconductor precursor.
9. The method as claimed in claim 8, wherein the II-VI compound semiconductor precursor comprises ZnO.
10. The manufacturing method as claimed in claim 1, wherein the substrate comprises Si wafer, glass substrate, ceramic substrate, metal substrate, paper substrate, or plastic substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A tire deflation device comprising:
a component including a bore in a material, the bore comprising:
a receiving region;
a sidewall surface; and
a base surface;
a channel extending from the sidewall surface into the material;
a keeper having a first section housed within the channel and a second section which extends past the sidewall surface into the receiving region; and
a spike removably insertable into the bore;
wherein the keeper is configured such that at least a portion of the second section retracts into the channel upon insertion of the spike into the receiving region.
2. The tire deflation device of claim 1 wherein the keeper comprises a metal.
3. The tire deflation device of claim 2 wherein insertion of the spike into the receiving region disposes the spike between the first lateral segment and the second lateral segment of the keeper.
4. The tire deflation device of claim 2 wherein the keeper is configured such that upon insertion of the spike into the bore at least a portion of the first segment retracts into the first lateral portion of the channel, and at least a portion of the second segment retracts into the second lateral portion of the channel.
5. A tire deflation device comprising:
a component including a bore in a material, the bore comprising:
a receiving region;
a sidewall surface; and
a base surface;
a channel extending from the sidewall surface into the material, the channel comprising a base portion across the base surface of the bore, a first lateral portion extending from the base surface toward an outer surface of the material, and a second lateral portion extending from the base surface toward the outer surface of the material;
a keeper having a first section housed within the channel and a second section which extends past the sidewall surface into the receiving region, the keeper comprising a base segment and a first lateral segment and a second lateral segment, the base segment being housed within the base portion of the channel and disposed between the first lateral segment and the second lateral segment, wherein the first lateral segment comprises a first bend disposed at a first distance from the base surface and wherein the second lateral segment comprises a second bend disposed at a second distance from the base surface, wherein the keeper comprises a first end and a second end and wherein the first end is closer to the first lateral channel portion than the first bend, and the second end is closer to the second lateral channel portion than the second bend, at least prior to insertion of a spike into the receiver region; and
a spike removably insertable into the bore.