1. A method for removing intervertebral disc material, comprising the steps of:
creating a working channel from a patient’s skin to an intervertebral disc space;
providing a protector, said protector having a longitudinal axis and including retractor having first and second generally rectangular, planar blade members fixed in position relative to one another to form a generally V-shaped construct for establishing a barrier, said construct having a longitudinal axis extending in a generally parallel orientation relative to said longitudinal axis of said protector;
positioning said protector near an entrance into said intervertebral disc space between said working channel and at least two of neural tissue, dura tissue, and vasculature adjacent to said entrance such that said first blade member prevents neural tissue from migrating into said working channel, and said second blade member prevents at least one of dura tissue and vasculature from migrating into said channel;
inserting a brush member through the working channel into said intervertebral disc space, said brush member having a length ranging from 0.25 to 4.0 inches, a diameter ranging from 0.082 to 1.225 inches, and a plurality of bristle members disposed in a helical configuration defining a capacity for carrying intervertebral disc material wherein said protector prevents contact between said brush member, said neural tissue and said at least one of dura tissue and vasculature;
manipulating said brush member within said intervertebral disc space to receive intervertebral disc material within said brush member; and
removing said brush member from said intervertebral disc space.
2. The method of claim 1, wherein said step of creating a working channel to the intervertebral disc space is accomplished via at least one of percutaneous surgical procedure and an open surgical procedure.
3. The method of claim 1, wherein said protector further comprises a cannula dimensioned to extend to said entrance of said intervertebral disc space, said cannula having an inner lumen dimensioned to slideably receive said brush member for passage into said intervertebral disc space.
4. The method of claim 3, wherein said cannula includes a lip member at a distal end thereof dimensioned to retract at least one of said neural tissue, dura tissue, and vasculature adjacent to said spine.
5. The method of claim 3, wherein said inner lumen of said cannula and said brush member have approximately the same cross-sectional shape.
6. The method of claim 1, wherein said brush member includes a stem member, and further including the step of providing a drive assembly capable of engaging with said stem member for manipulating said brush member within said intervertebral disc space.
7. The method of claim 6, wherein said drive assembly comprises one of a powered drive assembly coupled to said stem member and a manual drive assembly coupled to said stem member.
8. The method of claim 7, wherein said powered drive assembly is a power drill.
9. The method of claim 7, wherein said manual drive assembly includes a handle member capable of being coupled to said stem member.
10. The method of claim 9, wherein said manual drive assembly includes an extension member coupled to said handle and a quick-connect coupling assembly for releasable connection to said stem member.
11. The method of claim 7, wherein said drive assembly includes a stop member coupled to said stem member for controlling the depth to which said brush member can be advanced into said intervertebral disc space.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed:
1. A method for forming a stackable wafer in an implantable device, comprising:
forming an opening extending substantially through the wafer;
depositing conductive material within the opening to substantially fill the opening;
forming a bump on an upper surface of the wafer adjacent the conductive material; and
forming a contact pad on a lower surface of the wafer adjacent the conductive material.
2. The method set forth in claim 1 wherein forming an opening further comprises exposing a selected portion of the upper surface of the wafer to a reactive ion etching process for a preselected duration of time.
3. The method set forth in claim 1 wherein depositing conductive material within the opening further comprises depositing at least one of copper, tungsten, nickel, and aluminum within the opening.
4. The method set forth in claim 1 wherein depositing conductive material within the opening further comprises depositing a layer of conductive material over the upper surface of the wafer and within the opening, and removing a portion of the layer of conductive material overlying the upper surface of the wafer.
5. The method set forth in claim 4 wherein removing a portion of the layer of conductive material further comprises performing a chemical mechanical polishing of the layer of conductive material to remove a portion of the layer of conductive material overlying the upper surface of the wafer.
6. The method of claim 1 wherein forming a bump on an upper surface of the wafer further comprises forming a bump wherein at least a portion of a surface of the bump is wettable.
7. The method of claim 1 wherein forming a contact pad on a lower surface of the wafer further comprises forming a contact pad wherein at least a portion of a surface of the contact pad is wettable.
8. The method of claim 1 wherein forming an opening extending substantially through the wafer further comprises forming the opening extending substantially through a substrate of the wafer.
9. The method of claim 8 wherein forming an opening extending substantially through the wafer further comprises forming the opening extending substantially through a substrate of the wafer and any additional process layers formed on the substrate.
10. The method set forth in claim 1 wherein depositing conductive material within the opening further comprises depositing conductive material in contact with at least one conductive layer disposed within the wafer.
11. A method for forming a stacked arrangement of a first and second wafer in an implantable device, comprising:
forming an opening extending substantially through the first wafer;
depositing conductive material within the opening to substantially fill the opening in the first wafer;
forming a bump on an upper surface of the first wafer adjacent the conductive material;
forming a contact pad on a lower surface of the first wafer adjacent the conductive material;
forming an opening extending substantially through the second wafer;
depositing conductive material within the opening to substantially fill the opening in the second wafer;
forming a bump on an upper surface of the second wafer adjacent the conductive material;
forming a contact pad on a lower surface of the second wafer adjacent the conductive material;
positioning the first wafer adjacent the second wafer with the bump of the first wafer being adjacent the contact pad of the second wafer; and
coupling the bump of the first wafer with the contact pad of the second wafer.
12. The method set forth in claim 11 wherein coupling the bump of the first wafer with the contact pad of the second wafer further comprises soldering the bump of the first wafer with the contact pad of the second wafer.
13. The method set forth in claim 11 wherein forming an opening in the first wafer further comprises exposing a selected portion of the upper surface of the first wafer to a reactive ion etching process for a preselected duration of time.
14. The method set forth in claim 11 wherein depositing conductive material within the opening of the first wafer further comprises depositing at least one of copper, tungsten, nickel, and aluminum within the opening of the first wafer.
15. The method set forth in claim 11 wherein depositing conductive material within the opening of the first wafer further comprises depositing a layer of conductive material over the upper surface of the first wafer and within the opening, and removing a portion of the layer of conductive material overlying the upper surface of the first wafer.
16. The method set forth in claim 15 wherein removing a portion of the layer of conductive material further comprises performing a chemical mechanical polishing of the layer of conductive material to remove a portion of the layer of conductive material overlying the upper surface of the first wafer.
17. The method of claim 11 wherein forming a bump on an upper surface of the first wafer further comprises forming a bump wherein at least a portion of a surface of the bump is wettable.
18. The method of claim 11 wherein forming a contact pad on a lower surface of the second wafer further comprises forming a contact pad wherein at least a portion of a surface of the contact pad is wettable.
19. The method of claim 11 wherein forming an opening extending substantially through the firs wafer further comprises forming the opening extending substantially through a substrate of the first wafer.
20. The method of claim 19 wherein forming an opening extending substantially through the first wafer further comprises forming the opening extending substantially through the substrate of the first wafer and any additional process layers formed on the substrate.
21. The method set forth in claim 11 wherein depositing conductive material within the opening of the first wafer further comprises depositing conductive material in contact with at least one conductive layer disposed within the first wafer.