1. A catalyst for bulk polymerization comprising an organametallic compound and a thiol, said thiol being selected from the group consisting of:
alkylthiols having no functional group other than a thiol group;
aromatic thiols having no functional group other than a thiol group;
thiols having a functional group other than a thiol group selected from the group consisting of \u03b2-mercaptopropionic acid, mercaptoethanol, 3-mercaptopropyl (trimethoxy) silane and thiophenol;
polyfunctional thiol compounds obtained by esterifying trithioglycerol or pentaerythritol with \u03b2-mercaptopropionic acid, and
polmeric thiols having an active thiol group, said organometallic compound represented by the formula:
wherein M represents a metal selected from the group consisting of metals of Groups 4A, 4B, 5A and 5B of the periodic table, chromium, ruthenium and palladium; each of R1 and R2 independently represents at least one group selected from the group consisting of an unsubstituted or substituted aliphatic hydrocarbon group, an unsubstituted or substituted alicyclic hydrocarbon group, an unsubstituted or substituted aromatic hydrocarbon group and an unsubstituted or substituted silicon containing group, a hydrogen atom or a single bond, provided that R1 and R2 may cooperate with each other to bond the two 5-membered rings shown in the formula and provided that neighboring groups of R1 or R2 may cooperate with each other to form a cyclic structure;
each of a and b independently is an integer of 1 to 4; X represents a halogen atom or a hydrocarbon group optionally having at least one of hydrogen atoms thereof substituted with a halogen atom; and n is 0 or an integer subtractizig 2 from the valence of metal M.
2. The bulk polymerization catalyst as claimed in claim 1, wherein the organometallic compound represented by the formula (I) and the thiol are used in a molar ratio of 10:1 to 1:10,000.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A circuit for driving a semiconductor laser, comprising:
an integrated semiconductor circuit to control the drive of the semiconductor laser, which is connected to one end of the semiconductor laser;
a first power source for supplying a drive voltage to the one end of the semiconductor laser via the semiconductor integrated circuit;
a second power source, connected to the other end of the semiconductor laser, supplying a drive voltage to the other end; and
a voltage clamp circuit, connected to a connection terminal connecting the semiconductor laser and the semiconductor integrated circuit, for adjusting the electric potential of the connection terminal,
wherein the first power source supplies a positive first drive voltage to the anode of the semiconductor laser, the second power source supplies a negative second drive voltage to the cathode of the semiconductor laser, the absolute value of the first drive voltage is smaller than a voltage that is required for the semiconductor laser to irradiate at a targeted light amount, the absolute value of the second drive voltage is equal or smaller than a voltage at which a forward current starts to flow in the semiconductor laser, and the sum of the absolute value of the first drive voltage and the absolute value of the second drive voltage is equal or larger than the voltage that is required for the semiconductor laser to irradiate at the targeted light amount.
2. A circuit for driving a semiconductor laser, comprising:
an integrated semiconductor circuit to control the drive of the semiconductor laser, which is connected to one end of the semiconductor laser;
a first power source for supplying a drive voltage to the one end of the semiconductor laser via the semiconductor integrated circuit;
a second power source, connected to the other end of the semiconductor laser, supplying a drive voltage to the other end; and
a voltage clamp circuit, connected to a connection terminal connecting the semiconductor laser and the semiconductor integrated circuit, for adjusting the electric potential of the connection terminal,
wherein the voltage clamp circuit is a diode connected between the connection terminal connecting the semiconductor laser and the semiconductor integrated circuit, and the GND.
3. A circuit for driving a semiconductor laser, comprising:
a semiconductor integrated circuit to control the driving of the semiconductor laser, which is connected to one end of the semiconductor laser;
a first power source for supplying a drive voltage to a connection terminal connecting the semiconductor laser and the semiconductor integrated circuit;
a second power source, connected to the other end of the semiconductor laser, for supplying a drive voltage to other end; and
a voltage clamp circuit, connected between the connection terminal and the first power source, for adjusting the electric potential of the connection terminal,
wherein the first power source supplies a first drive voltage to the anode of the semiconductor laser, the second power source supplies a second drive voltage to the cathode of the semiconductor laser, the absolute value of the first drive voltage is smaller than a voltage that is required for the semiconductor laser to irradiate at a targeted light amount, the difference between the first drive voltage and the second drive voltage is equal or smaller than a voltage at which a forward current starts to flow in the semiconductor laser, and the absolute value of the second drive voltage is equal or larger than a voltage that is required for the semiconductor laser to irradiate at a targeted light amount.
4. A circuit for driving a semiconductor laser, comprising:
a semiconductor integrated circuit to control the driving of the semiconductor laser, which is connected to one end of the semiconductor laser;
a first power source for supplying a drive voltage to a connection terminal connecting the semiconductor laser and the semiconductor integrated circuit;
a second power source, connected to the other end of the semiconductor laser, for supplying a drive voltage to the other end; and
a voltage clamp circuit, connected between the connection terminal and the first power source, for adjusting the electric potential of the connection terminal,
wherein the voltage clamp circuit is a diode for keeping the electric potential of the connection terminal connecting the semiconductor laser and the semiconductor integrated circuit equal or lower than the electric potential of the first power source.
5. A drive circuit for driving a semiconductor laser, comprising:
a semiconductor integrated circuit, for controlling the drive of the semiconductor laser, which is connected to one end of a light-sensitive device for receiving monitoring light emitted from a light emitting device included in the semiconductor laser;
a first voltage clamp circuit, connected to a first connection terminal connecting the light-sensitive device and the semiconductor integrated circuit, for adjusting the electric potential of the first connection terminal; and
a second voltage clamp circuit, connected to a second connection terminal connecting one end of the light emitting device and the semiconductor integrated circuit, for adjusting the electric potential of the second connection terminal.