What is claimed is:
1. A method of etching a silicon substrate, the method comprising:
depositing a non-thermally cured photoresist mask on the upper region of a trench in the silicon substrate;
depositing a fluorocarbon film on the silicon substrate; and
bombarding the silicon substrate with ions, wherein the fluorocarbon film is preferentially removed from the lower region of the trench in the substrate, and the upper region of the trench is substantially protected by the photoresist mask.
2. The method of claim 1, additionally comprising:
curing the photoresist mask using an electron-beam system.
3. The method of claim 1, additionally comprising
removing the photoresist mask after the trench is a desired depth.
4. The method of claim 3, wherein the removing the polymer mask comprises stripping the photoresist mask using a solvent.
5. The method of claim 3, wherein removing the polymer mask comprises stripping the photoresist mask using an oxygen plasma.
6. The method of claim 1 wherein the fluorocarbon film comprises a film selected from the group consisting of perfluoromethane, CF4, perfluoroethane, C2F6, perfluoropropane, C3F8, and perfluorobutane, C4F10.
7. The method of claim 1 wherein the photoresist comprises a photoresist selected from the group consisting of diazonapthoquinone photoresist, PMMA, PGMA, and negative based resists.
8. The method of claim 1 wherein the depositing the fluorocarbon film additionally comprises flowing the fluorocarbon in a vacuum to deposit the film on the silicon substrate.
9. A system for etching a silicon substrate comprising:
a deposited non-thermally cured photoresist mask on the upper region of a trench in the silicon substrate; and
a fluorocarbon film deposited on the silicon substrate;
wherein the trench is formed by bombardment of the silicon substrate with ions, the fluorocarbon film is preferentially removed from the lower region of the trench in the substrate, and the upper region of the trench is substantially protected by the photoresist mask.
10. The system of claim 9 wherein the photoresist mask is cured using an electron-beam system.
11. The system of claim 9 wherein the flurocarbon film comprises a film selected from the group consisting of perfluoromethane, CF4, perfluoroethane, C2F6, perfluoropropane, C3F8, and perfluorobutane, C4F10.
12. The system of claim 9 wherein the photoresist comprises a photoresist selected from the group consisting of diazonapthoquinone photoresist, PMMA, PGMA, and negative based resists.
13. A method of etching a silicon substrate, the method comprising:
depositing a fluorocarbon film on the silicon substrate; and
mask means for substantially protecting an upper region of a trench in the substrate from bombardment with ions to form a trench in the silicon substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A reception apparatus comprising:
a correction unit that corrects phase compensation for each one of multiple phase-compensated segments that are connected one after another,
wherein the correction unit includes
a timing generation unit that, based on a phase of a known signal, generates a timing at which an amount of the phase compensation is initialized,
an amount-of-correction generation unit that, based on the phase of the known signal, generates an amount of correction for correcting the amount of the phase compensation, and
a phase correction unit that performs phase correction on the phase compensation using the amount of the correction that is generated by the amount-of-correction generation unit.
2. The reception apparatus according to claim 1,
wherein the phase of the known signal has multiple patterns, and
wherein the timing generation unit generates the timing at which the initialization occurs when among the multiple patterns, a predetermined pattern is detected.
3. The reception apparatus according to claim 2,
wherein the known signal is a pilot signal, and
wherein the pattern is categorized by a position in which a scattered pilot (SP) is arranged.
4. The reception apparatus according to claim 2,
wherein the amount of the phase compensation is 0 for every predetermined period, and
wherein the timing generation unit detects the timing at which the amount of the phase compensation is 0, by detecting the predetermined pattern.
5. The reception apparatus according to claim 2,
wherein the predetermined period for the amount of the phase compensation varies with transmission parameters, and
wherein by detecting the predetermined pattern, the timing generation unit detects the timing at which the amount of the phase compensation is 0 with the predetermined period that is specified by the transmission parameters.
6. The reception apparatus according to claim 5,
wherein the parameters are a mode and a guard interval ratio.
7. The reception apparatus according to claim 1,
wherein the segments being connected one after another are segments that are connected one after another in accordance with ISDB-Tmm or ISDB-Tsb specifications.
8. The reception apparatus according to claim 1,
wherein the segments being connected one after another are a type-B super segment in accordance with ISDB-Tmm or ISDB-Tsb specifications.
9. A reception method for use in a reception apparatus including a correction unit that corrects phase compensation for each one of multiple phase-compensated segments that are connected one after another, the method comprising:
enabling the correction unit to generate a timing at which an amount of the phase compensation is initialized, based on a phase of a known signal;
enabling the correction unit to generate an amount of correction for correcting the amount of the phase compensation, based on the phase of the known signal; and
enabling the correction unit to perform phase correction on the phase compensation using the generated amount of the correction.
10. A computer-readable program for causing a computer, which controls a reception apparatus which includes a correction unit that corrects phase compensation for each one of multiple phase-compensated segments that are connected one after another, to enable the correction unit to execute processing comprising:
generating a timing at which an amount of the phase compensation is initialized, based on a phase of a known signal;
generating an amount of correction for correcting the amount of the phase compensation, based on the phase of the known signal; and
performing phase correction on the phase compensation using the generated amount of the correction.
11. A reception apparatus comprising:
a correction unit that corrects phase compensation for each one of multiple phase-compensated segments that are connected one after another,
wherein the correction unit includes
an amount-of-correction generation unit that, based on a phase of a known signal, generates an amount of correction for correcting an amount of the phase compensation, and
a phase correction unit that performs phase correction on the phase compensation using the amount of the correction that is generated by the amount-of-correction generation unit.
12. A reception method for use in a reception apparatus including a correction unit that corrects phase compensation for each one of multiple phase-compensated segments that are connected one after another, the method comprising:
enabling the correction unit to generate an amount of correction for correcting an amount of the phase compensation, based on a phase of a known signal; and
enabling the correction unit to perform phase correction on the phase compensation using the generated amount of the correction.
13. A computer-readable program for causing a computer, which controls a reception apparatus which includes a correction unit that corrects phase compensation for each one of multiple phase-compensated segments that are connected one after another, to enable the correction unit to execute processing comprising:
generating an amount of correction for correcting an amount of the phase compensation, based on a phase of a known signal; and
performing phase correction on the phase compensation using the generated amount of the correction.