1. A corrosion resistant electrically conductive component, comprising:
an alloy substrate comprising 10-30 wt. % Cr, 0.5 to 7 wt. % V, and base metal comprising Fe; and
a continuous intermixed oxide-nitride surface layer essentially free of base metal comprising at least one nitride selected from the group consisting of chromium nitride, vanadium nitride, and a combination of chromium nitride and vanadium nitride, wherein a contact resistance of said component is less than 20 mohm-cm2 at compaction pressures above 120 Ncm2, and
wherein said continuous intermixed oxide-nitride surface layer comprises chromium and a vanadium phase selected from the group consisting of vanadium oxide, vanadium nitride, chromium vanadium nitride, vanadium-doped chromium oxide, and a combination thereof.
2. The corrosion resistant electrically conductive component of claim 1, wherein said nitride comprises a form selected from the group consisting of nitrogen doped metal oxide, metal oxynitride and discrete discontinuous segments of nitride.
3. The corrosion resistant electrically conductive component of claim 1, wherein said continuous intermixed oxide-nitride surface layer comprises at least one oxide selected from the group consisting of chromium oxide, vanadium oxide and chromium vanadium oxide.
4. The corrosion resistant electrically conductive component of claim 3, wherein said at least one nitride comprises a form selected from the group consisting of nitrogen doped metal oxide, metal oxynitride or discrete discontinuous segments of nitride.
5. The corrosion resistant electrically conductive component of claim 1, where said at least one nitride comprises discrete discontinuous segments of nitride.
6. The corrosion resistant electrically conductive component of claim 1, wherein said wt. % Cr is 20-27%.
7. The corrosion resistant electrically conductive component of claim 1, wherein said wt. % V is 0.5-6%.
8. The corrosion resistant electrically conductive component of claim 1, wherein said alloy substrate further comprises at least one element selected from the group consisting of Ni, Mn, C and N.
9. A method to prepare a corrosion resistant electrically conductive component, comprising the steps of:
providing an alloy substrate comprising 10-30 wt. % Cr, 0.5 to 7 wt. % V, and base metal comprising Fe,
exposing said alloy to a oxygen containing gas at an elevated temperature, and
subsequently exposing said alloy to an oxygen free nitrogen containing gas at an elevated temperature to produce the corrosion resistant electrically conductive component of claim 1.
10. The method of claim 9, wherein said step of exposing is carried out in a sealed system wherein said oxygen containing gas also contains nitrogen such that reaction will proceed with essentially complete consumption of said oxygen and forming said oxygen free nitrogen containing gas for subsequent exposing to said oxygen free nitrogen containing gas without exchange of gases in the sealed system.
11. The method of claim 9, wherein said step of exposing is carried out at a temperature of 700 to 1.000\xb0 C.
12. The method of claim 11, wherein said step of exposing is carried out with a gas containing H2, O2 and either N2, a noble gas, or N2 and a noble gas.
13. The method of claim 12, wherein said step of exposing is carried out with a N2\u2014H2\u2014O2 or Ar\u2014H2\u2014O2 mixture.
14. The method of claim 13, wherein said step of exposing is carried out with a N2-4H2-0.5O2 or Ar-4H2-0.5O2 mixture.
15. The method of claim 12, wherein said step of exposing is carried out for a period of time required for the formation of a chromium oxide and vanadium oxide surface layer of about 0.05 to about 0.5 mgcm2.
16. The method of claim 9, wherein said step of subsequently exposing is carried out at a temperature from 800 to 1000\xb0 C.
17. The method of claim 16, wherein said step of subsequently exposing is carried out with a N2\u2014H2 mixture.
18. The method of claim 17, wherein subsequently exposing said oxygen free nitrogen containing gas is carried out with a N2-4H2 mixture.
19. The method of claim 16, wherein subsequently exposing said oxygen free nitrogen containing gas is carried out for a period of time required for the formation of a chromium nitride and vanadium nitride surface layer of about 0.05 to about 1 mgcm2.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A platen device applying suction to a conveyed recording medium opposite a printhead, comprising:
a platen divided perpendicularly to the conveyance direction of the recording medium into a plurality of suction zones with suction holes in the surface on the side that contacts the recording medium; and
a plurality of shutters disposed to the platen and respectively opening or closing the suction holes in the plural suction zones according to the width of the conveyed recording medium.
2. The platen device described in claim 1, wherein:
the plural suction zones are divided by a plurality of guide ribs extending in the conveyance direction on the surface of the platen;
the suction holes are disposed in the recessed surface of the platen between two adjacent guide ribs; and
the shutters are disposed on the recessed surface.
3. The platen device described in claim 2, wherein:
the shutters can move freely forward and back in the conveyance direction between an open position that opens and a closed position that closes the suction holes; and
through-holes that communicate with the suction holes in the open position are formed in each shutter.
4. The platen device described in claim 3, wherein:
a protrusion is disposed to the side wall of the guide rib; and
two grooves that engage the protrusions in the open position and the closed position are disposed to the shutter.
5. The platen device described in claim 4, further comprising:
a plurality of actuators that respectively open or close the plural shutters; and
a control unit that individually controls the plural actuators,
the control unit selectively controlling the plural actuators based on the input type of recording medium.
6. The platen device described in claim 4, further comprising:
a plurality of actuators that respectively open or close the plural shutters; and
a control unit that individually controls the plural actuators,
the control unit selectively controlling the plural actuators based on the input temperature and humidity of the environment around the recording medium.
7. A platen device applying suction to a conveyed recording medium opposite a printhead, comprising:
a platen divided perpendicularly to the conveyance direction of the recording medium into a plurality of suction zones with suction holes in the surface on the side that contacts the recording medium;
a plurality of suction chambers corresponding to the plural suction zones disposed to the platen and communicating with the suction holes;
a plurality of air channels communicating respectively with the plural suction chambers;
a common air channel in which the plural air channels merge and communicate with the air suction source; and
a plurality of dampers disposed respectively in the plural air channels to open or close the corresponding air channel.
8. The platen device described in claim 7, further comprising:
a plurality of actuators that respectively open or close the plural dampers; and
a control unit that individually controls the plural actuators.
9. A printing comprising:
the platen device described in claim 1; and
an inkjet printhead.