1. A semiconductor device comprising:
at least one trench lateral power MOSFET on a semiconductor substrate, comprising
a first gate oxide film and first gate electrodes that are positioned in a trench;
a first drain region positioned under a bottom surface of the trench;
first source regions positioned on both sides of the trench;
an extended drain region positioned between the first drain region and the first source regions;
a first drain electrode connected electrically to the first drain region; and
first source electrodes connected electrically to corresponding first source regions; and
at least one planar MOSFET positioned on the semiconductor substrate, comprising
a second gate oxide film and a second gate electrode that are positioned on a surface of the semiconductor substrate;
a second drain region and a second source region that are positioned in a surface layer of the semiconductor substrate on both sides of the second gate electrode;
a second drain electrode connected electrically to the second drain region; and
a second source electrode connected electrically to the second source region,
wherein the first drain electrode, the first source electrodes, the second drain electrode, and the second source electrode are formed by patterning a same metal layer.
2. The semiconductor device according to claim 1, wherein the first gate electrodes and the second gate electrode are formed by patterning a polysilicon layer formed on the surface of the semiconductor substrate and inside the trench.
3. The semiconductor device according to claim 1, wherein an n-channel trench lateral power MOSFET and a p-channel trench lateral power MOSFET are positioned on the semiconductor substrate.
4. The semiconductor device according to claim 1, wherein the at least one trench lateral power MOSFET is positioned in a well region that is positioned in the semiconductor substrate.
5. The semiconductor device according to claim 4, wherein a plurality of trench lateral power MOSFETs of a positioned in the same well region.
6. The semiconductor device according to claim 1, wherein an n-channel planar MOSFET and a p-channel planar MOSFET are positioned on the semiconductor substrate.
7. The semiconductor device according to claim 1, wherein a bipolar transistor is positioned on the semiconductor substrate, and a collector electrode, a base electrode, and an emitter electrode of the bipolar transistor are formed by patterning the metal layer.
8. The semiconductor device according to claim 1, wherein a resistance element is positioned on the semiconductor substrate, and electrodes of the resistance element are formed by patterning the metal layer.
9. The semiconductor device according to claim 2, wherein a capacitance element is positioned on the semiconductor substrate, and an electrode of the capacitance element is formed by patterning the polysilicon layer.
10. The semiconductor device according to claim 1, wherein the first gate oxide film is thicker than the second gate oxide film.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A connector comprising:
a plurality of contacts; and
an insulator having a plurality of through-holes for receiving the plurality of contacts,
wherein each of the plurality of contacts comprises a resilient member and has rolled surfaces as contact surfaces, and two contacts of the plurality of contacts are disposed in each of the plurality of through-holes in such a manner that the contact surfaces of one of said two contacts face the respective contact surfaces of the other one of said two contacts in a direction perpendicular to a pitch array of the contacts that extends in a direction of a length of a connector and also extends in a direction substantially perpendicular to the plane of the contacts.
2. The connector according to claim 1, wherein each of the plurality of contacts includes electric contact portions at upper and lower end portions thereof.
3. The connector according to claim 1, wherein opening portions of the plurality of through-holes are arranged in a linear fashion on at least one surface of the insulator.
4. The connector according to claim 1, wherein said two contacts are disposed in parallel to each other within the through-hole.
5. The connector according to claim 1, wherein engaging portions for fixing the two contacts are formed on an inner wall of each of the plurality of through-holes.
6. Contacts which are used in a pair, each contact comprising:
a pair of contact portions which are formed at both ends of the contact and which come in electrical contact with associated electrodes on two opposed wiring boards which are used in an electronic device; and
a resilient member which couples the pair of contact portions,
wherein the contact portions are formed into rolled surfaces, and the contact portions of one of the contacts used in a pair face the respective contact portions of the other one of the contacts used in a pair in a direction perpendicular to a pitch array of the contacts that extends in a direction of a length of a connector and also extends in a direction substantially perpendicular to the plane of the contacts.
7. The contacts according to claim 6, wherein each of the contacts includes:
a vertically extending columnar portion; and
strip-shaped portions extending from a middle portion of the columnar portion in up-and-down directions in a meandering fashion to the pair of contact portions.
8. The contacts according to claim 6, wherein a plurality of engaging portions for engaging the contact with an inner wall of an insulator, which receives the contact, are formed on the columnar portion.
9. The contacts according to claim 7, wherein the strip-shaped portion includes a U-shaped portion which extends in a horizontal direction, and a U-shaped portion which extends in a vertical direction.
10. An electronic device comprising:
a plurality of wiring boards which are stacked; and
a plurality of connectors which are disposed between the plurality of wiring boards, thereby to electrically connect the plurality of wiring boards,
wherein each of the connectors comprises:
a plurality of sets of contacts, each set being composed of a pair of contacts, each of the contacts comprising a resilient member and having rolled surfaces as contact surfaces, the contact surfaces of one of said pair of contacts facing the respective contact surfaces of the other one of said pair of contacts in a direction perpendicular to a pitch array of the contacts that extends in a direction of a length of a connector; and
an insulator in which a plurality of through-holes each receiving the pair of contacts are formed and also extends in a direction substantially perpendicular to the plane of the contacts.