1. A semiconductor device comprising:
a first insulating layer;
a first conductive layer over the first insulating layer;
a second insulating layer over the first conductive layer;
a signal wiring layer for electrically connecting an integrated circuit portion to an antenna, the signal wiring layer formed over the second insulating layer; and
a second conductive layer formed over the second insulating layer wherein the second conductive layer is electrically connected to the first conductive layer through an opening of the second insulating layer, and
a third conductive layer formed over the second insulating layer wherein the third conductive layer is electrically connected to the first conductive layer through an opening of the second insulating layer,
wherein the first conductive layer overlaps the signal wiring layer with the second insulating layer interposed therebetween and the signal wiring layer is located between the second conductive layer and the third conductive layer.
2. The semiconductor device according to claim 1, wherein the integrated circuit portion comprises a thin film transistor.
3. The semiconductor device according to claim 1, wherein the integrated circuit portion comprises a memory element.
4. The semiconductor device according to claim 1, wherein the signal wiring layer extends in parallel with the second conductive layer and the third conductive layer.
5. A semiconductor device comprising:
an integrated circuit formed over a substrate;
a first insulating layer formed over the substrate;
a first conductive layer over the first insulating layer;
a second insulating layer over the first conductive layer;
a signal wiring layer connected to the integrated circuit, the signal wiring layer formed over the second insulating layer; and
a second conductive layer formed over the second insulating layer wherein the second conductive layer is electrically connected to the first conductive layer through an opening of the second insulating layer,
a third conductive layer formed over the second insulating layer wherein the third conductive layer is electrically connected to the first conductive layer through an opening of the second insulating layer; and
an antenna formed over the substrate wherein the antenna is electrically connected to the integrated circuit through the signal wiring layer,
wherein the first conductive layer overlaps the signal wiring layer with the second insulating layer interposed therebetween and the signal wiring layer is located between the second conductive layer and the third conductive layer.
6. The semiconductor device according to claim 5, wherein the integrated circuit comprises a thin film transistor.
7. The semiconductor device according to claim 5, wherein the integrated circuit comprises a memory element.
8. The semiconductor device according to claim 5, wherein the substrate is a flexible substrate.
9. The semiconductor device according to claim 5, wherein the signal wiring layer extends in parallel with the second conductive layer and the third conductive layer.
10. A semiconductor device comprising:
an integrated circuit formed over a substrate;
a first insulating layer formed over the substrate;
a first conductive layer over the first insulating layer;
a second insulating layer over the first conductive layer;
a signal wiring layer connected to the integrated circuit, the signal wiring layer formed over the second insulating layer; and
a second conductive layer formed over the second insulating layer wherein the second conductive layer is electrically connected to the first conductive layer through a plurality of openings of the second insulating layer,
a third conductive layer formed over the second insulating layer wherein the third conductive layer is electrically connected to the first conductive layer through a plurality of openings of the second insulating layer; and
an antenna formed over the substrate wherein the antenna is electrically connected to the integrated circuit through the signal wiring layer,
wherein the first conductive layer overlaps the signal wiring layer with the second insulating layer interposed therebetween and the signal wiring layer is located between the second conductive layer and the third conductive layer.
11. The semiconductor device according to claim 10, wherein the integrated circuit comprises a thin film transistor.
12. The semiconductor device according to claim 10, wherein the integrated circuit comprises a memory element.
13. The semiconductor device according to claim 10, wherein the substrate is a flexible substrate.
14. The semiconductor device according to claim 10, wherein the signal wiring layer extends in parallel with the second conductive layer and the third conductive layer.
15. A semiconductor device comprising:
an integrated circuit formed over a substrate;
a first insulating layer formed over the substrate;
a first conductive layer over the first insulating layer;
a second insulating layer over the first conductive layer;
a signal wiring layer connected to the integrated circuit, the signal wiring layer formed over the second insulating layer; and
a second conductive layer formed over the second insulating layer wherein the second conductive layer is electrically connected to the first conductive layer through a plurality of openings of the second insulating layer,
an antenna formed over the substrate wherein the antenna is electrically connected to the integrated circuit through the signal wiring layer,
wherein the first conductive layer overlaps the signal wiring layer with the second insulating layer interposed therebetween, and
wherein the first conductive layer and the second conductive layer are arranged so that electrical signals from the signal wiring layer are shielded at least partly.
16. The semiconductor device according to claim 15, wherein the integrated circuit comprises a thin film transistor.
17. The semiconductor device according to claim 15, wherein the integrated circuit comprises a memory element.
18. The semiconductor device according to claim 15, wherein the substrate is a flexible substrate.
19. The semiconductor device according to claim 15, wherein the signal wiring layer extends in parallel with the second conductive layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of providing air conditioning to a bus having at least one return air duct for conducting the flow of return air from a passenger compartment and at least one supply air duct for conducting the flow of conditioned air to the passenger compartment, comprising the steps of:
providing a plurality of relatively small, compact air conditioning modules;
determining the total amount of air conditioning capacity required for the bus;
determining the number of modules needed to collectively meet that total capacity requirement;
installing said number of modules on the bus in a desired arrangement such that each module registers with both a return air opening in the return air duct and a supply air opening in the supply air duct and with each module being a self contained air conditioning system which, when connected to electric power is capable of providing conditioned air to the bus.
2. A method as set forth in claim 1 wherein said modules are installed in such a way that each one extends substantially longitudinally along a line parallel to the longitudinal centerline of the bus.
3. A method as set forth in claim 1 wherein said modules are installed in tandem, and extending transversely across a partial width of the bus.
4. A method as set forth in claim 1 wherein said modules are in parallel relationship.