That which is claimed is:
1. A device for detecting the application of a high voltage to an internal node of an integrated circuit comprising a high-voltage divider circuit and a threshold detection circuit receiving a signal at input given by the output node of the divider circuit and giving a threshold crossing detection signal at output, wherein said detection circuit is a circuit connected between the logic supply voltage and the ground, the detection device furthermore comprising a negative feedback loop at output of the divider circuit to limit the voltage build-up at the output node of the divider circuit after the crossing of the detection threshold.
2. A detection device according to claim 1, wherein said negative feedback loop is connected at output to an internal node of the divider circuit located between the high-voltage node and the output node of the divider circuit.
3. A detection device according to claim 2, wherein the divider circuit comprises a first resistor connected between the high-voltage node and said internal node, a transistor connected between said internal node and the output node with its gate receiving the logic supply voltage and a second resistor connected between the output node and the ground.
4. A detection device according to claim 3, wherein the first resistor and the second resistor are elements capable of withstanding the high voltage.
5. A device according to claim 4, wherein the first resistor is formed by at least two standard MOS transistors in series having their gates connected to the output node or to the internal node of the divider circuit.
6. A device according to any of the above claims, wherein the negative feedback loop comprises a resistor connected between the high-voltage node and an internal node, a first transistor connected between this internal node and the logic supply voltage, with its gate connected to the output node of the divider circuit, and a second transistor, connected between the internal node of the divider circuit and the logic supply voltage, with its gate connected to the internal node of the loop.
7. A detection device according to the previous claim, wherein the resistor of the loop is of the type capable of withstanding the high voltage.
8. A detection device according to claim 7, wherein the resistor of the loop is formed by at least two series-connected standard MOS transistors having their gates connected to the output node or to the internal node of the divider circuit.
9. A detection device according to any of the previous claims, wherein the detection circuit comprises an inverter.
10. A detection device according to any of the previous claims, made with MOS or CMOS technology.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A thermoanalytical sensor comprising:
a substrate that can conduct a heat flow between a heat source that is thermally coupled to the substrate and at least one measurement position that is formed on the sensor; and
a thermocouple arrangement formed on a substantially planar surface of the substrate to deliver a thermoelectric signal, wherein the thermocouple arrangement comprises:
a serial chain of thermocouple junctions that are composed of two different thermocouple materials serially connected to form a thermocouple column, wherein the serial chain of thermocouple junctions extends in an azimuthal direction around a center of the measurement position;
at least one interstitial area of the surface is azimuthally confined between a first thermocouple junction closest to the center and two immediately neighboring second thermocouple junctions in the serial chain;
wherein the chain comprises a first thermocouple junction connected to a second thermocouple junction of the chain, and a third thermocouple junction connected to a fourth thermocouple junction of the chain, such that the first, second, third, and fourth thermocouple junctions are arranged at different radial distances from the center of the measurement position.
2. A thermoanalytical sensor according to claim 1, wherein thermocouple material between the first and second thermocouple junctions in the serial chain extends in a shape of rectilinear strip-sections.
3. A thermoanalytical sensor according to claim 1, wherein thermocouple material between the third and fourth thermocouple junctions that are immediate neighbors in the serial chain and lie within the same interstitial area extends in a shape of rectilinear strip sections.
4. A thermoanalytical sensor according to claim 1, wherein the thermocouple material runs from the fourth thermocouple junctions of the chain to the third thermocouple junctions of the chain, and includes azimuthally-directed strip sections.
5. A thermoanalytical sensor according to claim 1, wherein connector terminals are formed on the surface of the substrate, said connector terminals being respectively connected to two ends of the thermocouple column, wherein the thermoelectric signal delivered by the thermocouple column can be tapped from said connector terminals.
6. A thermoanalytical sensor according to claim 1, wherein the substrate is a ceramic material.
7. A thermoanalytical sensor according to claim 1, wherein the first thermocouple junction lies on a first circle whose midpoint is located at the center of the measurement position, the second thermocouple junctions lie on a second circle concentric to and with a larger radius than the first circle, the third thermocouple junction lies on a third circle that is concentric to the first circle and has a radius that is larger than the radius of the first circle and smaller than the radius of the second circle, and the fourth thermocouple junction lies on a fourth circle that is concentric to the first circle and has a larger radius than the second circle.
8. A thermoanalytical sensor according to claim 7, wherein the thermocouple junctions of a chain are arranged on their respective circles at equal angular intervals.
9. A thermoanalytical sensor according to claim 1, wherein a plurality of the measurement positions are arranged on the sensor.
10. A thermoanalytical sensor according to claim 9, wherein two of the measurement positions are arranged on the sensor.
11. A thermoanalytical sensor according to claim 9, wherein four measurement positions are arranged on the sensor in a configuration where a straight connecting line between centers of one pair of the measurement positions perpendicularly bisects a straight line between the centers of the other pair, and vice versa.
12. A thermoanalytical sensor according to claim 1, wherein the substrate is a ceramic substrate whose thermal conductivity is not larger than 5 Watt per meter and Kelvin.
13. A thermoanalytical sensor according to claim 12, wherein the substrate comprises a glass-ceramic material.
14. A thermoanalytical sensor according to claim 12, wherein the substrate is a ceramic substrate whose thermal conductivity is not larger than 3 Watt per meter and Kelvin.
15. A thermoanalytical sensor according to claim 12, wherein the substrate is a ceramic substrate whose thermal conductivity is not larger than 2 Watt per meter and Kelvin.
16. A thermoanalytical sensor according to claim 1, wherein a further thermocouple arrangement is formed at the measurement position on the surface of the substrate for delivering a thermoelectric signal representing absolute temperature at the measurement position, and connector terminals for tapping the thermoelectric signal representing the absolute temperature are formed on the surface of the substrate.
17. A thermoanalytical sensor according to claim 16, wherein the thermocouple arrangement that serves to deliver the thermoelectric signal representing the absolute temperature comprises an area containing a first thermocouple material, said area being delimited by the thermocouple junctions which surround the measurement position, and further comprises a connector portion leading from said delimited area containing the first thermocouple material to one of the connector terminals that are arranged on the surface.
18. A thermoanalytical sensor according to claim 17, wherein said delimited area containing the first thermocouple material is configured in a shape of a circular ring.
19. A thermoanalytical sensor according to claim 18, wherein in the delimited area containing the first thermocouple material, a thermocouple junction is formed with a second thermocouple material that is different from the first thermocouple material and extends to a connector terminal that is formed on the surface.
20. A thermoanalytical sensor according to claim 19, wherein two measurement positions are formed on the sensor, a connection is formed on the substrate between the second thermocouple materials of the two measurement positions, and said connection leads to a common connector terminal.
21. A thermoanalytical sensor according to claim 19, wherein thermocouple arrangements that are formed on the substrate are configured as thick film arrangements.
22. A thermoanalytical sensor according to claim 19, wherein two measurement positions are formed on the sensor, a connection is formed on the substrate between two electrically equivalent ends of respective thermocouple columns at the measurement positions, and other ends of the two thermocouple columns are connected to connector terminals that are formed on the substrate and serve to tap a difference between respective thermoelectric signals of the two thermocouple columns.
23. A thermoanalytical sensor according to claim 22, wherein the connection is connected to a common connector terminal that is formed on the substrate.