1-6. (canceled)
7. A sealing device comprising:
an oil seal attached to a non-rotating housing, and having an oil resisting seal lip slidably brought into close contact with a rotating body inserted transversally to an inner periphery of the housing; and
a dust cover attached to said rotating body while being positioned at an outer side of said oil seal,
wherein one of said oil seal and dust cover which are opposed to each other is provided with an external seal lip which is positioned at an outer side of a slide section between said oil resisting seal lip and rotating body and is slidably brought into close contact with the other of said oil seal and dust cover, and a labyrinth seal is formed by said dust cover and a flange opposed closely thereto, at an outer diameter side of the external seal lip, an inner diameter end of the labyrinth seal is opposed to a muddy water receiving groove which is continuously provided in a circumferential direction at a position which is shifted in an axial direction with respect to the slide section of said external seal lip.
8. A sealing device comprising:
an oil seal attached to a non-rotating housing, and having an oil resisting seal lip slidably brought into close contact with a rotating body inserted transversally to an inner periphery of the housing; and
a dust cover attached to said rotating body while being positioned at an outer side of said oil seal,
wherein one of said oil seal and dust cover which are opposed to each other is provided with an external seal lip which is positioned at an outer side of a slide section between said oil resisting seal lip and rotating body and is slidably brought into close contact with the other of said oil seal and dust cover, and a labyrinth seal in which an extension section of said oil seal and dust cover are close to each other is provided at an outer diameter side of the external seal lip, and the labyrinth seal is constructed by an inside disc-shaped gap between said extension section and dust cover which are opposed in the axial direction to each other, a tubular gap between said extension section and dust cover which are opposed in a radial direction to each other in an outer side thereof, and an outer diameter gap between a collar section formed in one of said extension section and dust cover and an outer tube section formed in the other of said extension section and dust cover, which are opposed in the axial direction to each other, at a further outer side thereof.
9. The sealing device as claimed in claim 7, wherein a muddy water receiving groove is formed in an outer periphery of a root of a muddy water receiving lip provided between the labyrinth seal and the external seal lip.
10. The sealing device as claimed in claim 8, wherein one of the oil seal and the dust cover which are opposed to each other, is provided with an auxiliary seal lip which is positioned between the external seal lip and the labyrinth seal, is slidably brought into close contact with the other of said oil seal and dust cover, and has a smaller fastening margin than that of said external seal lip.
11. The sealing device as claimed in claim 8, wherein the external seal lip is slidably brought into close contact with an outer peripheral surface of a cylinder section which is formed in the other of the oil seal and the dust cover.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A heat curable silicon-containing film-forming composition comprising
(A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst,
(B) at least one compound having the general formula (1) or (2):
LaHbX \u2003\u2003(1)
wherein L is lithium, sodium, potassium, rubidium or cesium, X is a hydroxyl group or a mono or polyfunctional organic acid residue of 1 to 30 carbon atoms, \u201ca\u201d is an integer of at least 1, \u201cb\u201d is 0 or an integer of at least 1, and a+b is equal to the valence of hydroxyl group or organic acid residue,
MaHbA \u2003\u2003(2)
wherein M is sulfonium, iodonium or ammonium, A is X or a non-nucleophilic counter ion, \u201ca\u201d and \u201cb\u201d are as defined above, and a+b is equal to the valence of hydroxyl group, organic acid residue or non-nucleophilic counter ion,
(C) a mono or polyfunctional organic acid of 1 to 30 carbon atoms,
(D) a mono or polyhydric alcohol substituted with a cyclic ether, and
(E) an organic solvent.
2. The silicon-containing film-forming composition of claim 1, wherein the silicon-containing compound (A) comprises a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst which is selected from mineral acids, sulfonic acid derivatives and mixtures thereof to form a reaction mixture containing the silicon-containing compound, and substantially removing the acid catalyst from the reaction mixture.
3. The silicon-containing film-forming composition of claim 1, wherein M in formula (2) is tertiary sulfonium, secondary iodonium, or quaternary ammonium.
4. The silicon-containing film-forming composition of claim 1, wherein M in formula (2) is photo-degradable.
5. The silicon-containing film-forming composition of claim 1, further comprising water.
6. The silicon-containing film-forming composition of claim 1, further comprising a photoacid generator.
7. A silicon-containing film for use in a multilayer resist process involving the steps of forming an organic film on a processable substrate, forming a silicon-containing film thereon, further forming a resist film thereon from a silicon-free chemically amplified resist composition, patterning the resist film, patterning the silicon-containing film using the resist film pattern, patterning the underlying organic film with the silicon-containing film pattern made an etching mask, and etching the processable substrate with the patterned organic film made an etching mask,
the silicon-containing film being formed from the composition of claim 1.
8. The silicon-containing film formed from the composition of claim 1, said silicon-containing film being used in the multilayer resist process of claim 7 wherein the process further involves the step of disposing an organic antireflective coating between the resist film and the silicon-containing film.
9. A substrate having formed thereon, in sequence, an organic film, a silicon-containing film of the composition of claim 1, and a photoresist film.
10. A substrate having formed thereon, in sequence, an organic film, a silicon-containing film of the composition of claim 1, an antireflective coating, and a photoresist film.
11. The substrate of claim 9, wherein said organic film is a film having an aromatic framework.
12. A method for forming a pattern in a substrate, comprising the steps of:
providing the substrate of claim 9,
exposing a pattern circuit region of the photoresist film to radiation,
developing the photoresist film with a developer to form a resist pattern,
dry etching the silicon-containing film with the resist pattern made an etching mask,
etching the organic film with the patterned silicon-containing film made an etching mask, and
etching the substrate with the patterned organic film made an etching mask, for forming a pattern in the substrate.
13. A method for forming a pattern in a substrate, comprising the steps of:
providing the substrate of claim 10,
exposing a pattern circuit region of the photoresist film to radiation,
developing the photoresist film with a developer to form a resist pattern,
dry etching the antireflective coating and the silicon-containing film with the resist pattern made an etching mask,
etching the organic film with the patterned silicon-containing film made an etching mask, and
etching the substrate with the patterned organic film made an etching mask, for forming a pattern in the substrate.
14. The patterning method of claim 12, wherein said organic film is a film having an aromatic framework.
15. The patterning method of claim 12, wherein the exposing step is carried out by photolithography using radiation having a wavelength equal to or less than 300 nm.