What is claimed is:
1. A silicon controlled rectifier with a controlled guard ring structure comprising:
a bridging modified lateral silicon controlled rectifier structure of a first conductivity type having a first lightly doped well region of a second conductivity type and a second lightly doped well region of said first conductivity type in a substrate having said first conductivity, wherein said second lightly doped well region adjacent to said first lightly doped well region, and said second conductivity type opposites to said first conductivity type;
a first node is electrically coupled to a first heavily doped region of said second conductivity type and to a second heavily doped region of said first conductivity type, wherein each said heavily doped region in the concentration is higher than each said lightly doped well region;
a second node is electrically coupled to a fourth heavily doped region having said first conductivity type and to a third heavily doped region having said second conductivity type, wherein the electrical type of said second node opposites to said first node;
a controlled guard ring in said first lightly doped well region;
a switch having a first terminal and a second terminal, wherein said first terminal is electrically coupled to said first heavily doped region and said second terminal is electrically coupled to said controlled guard ring; and
a control circuit is electrically coupled to said switch.
2. The silicon controlled rectifier with a controlled guard ring according to claim 1, wherein said switch is a metal oxide semiconductor transistor.
3. The silicon controlled rectifier with a controlled guard ring according to claim 1, wherein said first node is anode.
4. The silicon controlled rectifier with a controlled guard ring according to claim 1, wherein said second node is cathode.
5. A silicon controlled rectifier with controlled guard ring structure comprising:
a bridging modified lateral silicon controlled rectifier structure of a first conductivity type having a first lightly doped well region of a second conductivity type, a second lightly doped well region of said second conductivity type, and a third lightly doped well region of said first conductivity type in a substrate having said first conductivity, wherein said third lightly doped well region adjacent to said second lightly doped well region, and said second conductivity type opposites to said first conductivity type;
a first node is electrically coupled to first heavily doped region of said second conductivity type and to second heavily doped region of said first conductivity type, wherein each said heavily doped region in the concentration is higher than each said lightly doped well region;
a switch having a terminal, wherein said terminal is electrically coupled to said fifth heavily doped region;
a second node is electrically coupled said switch, wherein the electrical type of said second node same as said first node;
a third node is electrically coupled to a fourth heavily doped region of said first conductivity type and to a third heavily doped region of said second conductivity type, wherein said electrical type of said third node opposite said first node and said second node;
a control circuit is electrically coupled to said switch.
6. The silicon controlled rectifier with a guard ring structure according to claim 5, wherein said switch is a metal oxide semiconductor transistor.
7. The silicon controlled rectifier with a guard ring structure according to claim 5, wherein said first node and said second node is anode.
8. The silicon controlled rectifier with a guard ring structure according to claim 7, wherein said first node and said second node can be electrically coupled different application voltage respectively.
9. The silicon controlled rectifier with a guard ring structure according to claim 7, wherein said second node can electrically couple to said first node, such that said first node and said second node can be electrically coupled to an application voltage.
10. The silicon controlled rectifier with a guard ring structure according to claim 5, wherein said third node is cathode.
11. A silicon controlled rectifier with a controlled guard ring structure comprising:
a substrate having a first conductivity type, a first lightly doped well region having a second conductivity type, and a second lightly doped well region having said first conductivity type adjacent to said first lightly doped well region within said substrate, wherein said second conductivity type opposites to said first conductivity type;
a first heavily doped region having said second conductivity type in said first lightly doped well region;
a second heavily doped region having said first conductivity type in said first lightly doped well region;
a third heavily doped region having said second conductivity type in said second lightly doped well region;
a fourth heavily doped region having first conductivity type in said second lightly doped well region;
a fifth heavily doped region having said second conductivity type in said first lightly doped well region;
a sixth heavily doped region having said first conductivity type in said first lightly doped well region and in said second lightly doped well region, such that said sixth heavily doped region overlaps a junction between said first lightly doped region and said second lightly doped well region;
an anode is electrically coupled to said first heavily doped region and to said second heavily doped region;
a switch having a first terminal and a second terminal, wherein said first terminal electrically couple to said second heavily doped region and said second terminal electrically couple to said fifth heavily doped region;
a control circuit is electrically to said switch; and
a cathode is electrically coupled to said third heavily doped region and to said fourth heavily doped region.
12. The silicon controlled rectifier with controlled guard ring structure according to claim 11, wherein said fifth heavily doped region is a controlled guard ring.
13. The silicon controlled rectifier with controlled guard ring structure according to claim 11, wherein said switch is a metal oxide semiconductor transistor.
14. The silicon controlled rectifier with controlled guard ring structure according to claim 11, wherein said controlled circuit is a resistor-capacitor circuit.
15. The silicon controlled rectifier with controlled guard ring structure according to claim 14, wherein said controlled circuit controlling the function of said switch.
16. A silicon controlled rectifier with a controlled guard well ring structure comprising:
a substrate having a first conductivity type, a first lightly doped well region having a second conductivity type, a second lightly doped well region having said second conductivity type, and a third lightly doped well region having said first conductivity type adjacent to said second lightly doped well region within said substrate, wherein said second conductivity type opposites to said first conductivity type;
a first heavily doped region having said second conductivity type in said first lightly doped well region;
a second heavily doped region having said first conductivity type in said first lightly doped well region;
a third heavily doped region having said second conductivity type in said third lightly doped well region;
a forth heavily doped region having said first conductivity type in said third lightly doped well region;
a fifth heavily doped region having said second conductivity type in said second lightly doped well region;
a sixth heavily doped region having said first conductivity type in said substrate and said first lightly doped well region, such that said sixth heavily doped region overlaps a junction between said substrate and said second lightly doped well region;
a first node is electrically coupled said first heavily doped region and to said second heavily doped region;
a switch having a terminal, wherein said terminal is electrically coupled to said fifth heavily doped region;
a second node is electrically coupled to said switch;
a control circuit is electrically coupled to said switch; and
a third node is electrically coupled to said third heavily doped region and to said fourth heavily doped region.
17. The silicon controlled rectifier with a controlled guard ring structure according to, claim 16, wherein said second lightly doped well region is a controlled well guard ring.
18. The silicon controlled rectifier with controlled guard ring structure according to claim 16, wherein said switch is a metal oxide semiconductor transistor.
19. The silicon controlled rectifier with controlled guard ring structure according to claim 16, wherein said control circuit is a resistor-capacitor circuit.
20. The silicon controlled rectifier with controlled guard ring structure according to claim 19, wherein said control circuit controlling the function of said switch.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An integrated fuel and air delivery system for a fuel cell comprising:
at least one pump;
an air inlet member connected to the pump; and
an air outlet member connected to the pump
wherein desired quantities of fuel and air are mixed in the air outlet member and wherein resonance of the fuel and air are removed prior to introduction into the fuel cell.
2. The integrated fuel and air delivery system of claim 1 including a fuel input and output member linked with the air outlet member; and a fuel sensor member connected to the fuel input and output member.
3. The integrated fuel and air delivery system for a fuel cell of claim 1 wherein the integrated fuel and air delivery system is a self supporting module that may be linked with a fuel cell.
4. The integrated fuel and air delivery system for a fuel cell of claim 1 wherein pulses applied to the fuel and air from the pump are dampened prior to introduction into the fuel cell.
5. The integrated fuel and air delivery system for a fuel cell of claim 1 wherein the air inlet member includes an air inlet chamber having formations thereon for directing the flow of air, the air chamber linked to the pump at an air outlet.
6. The integrated fuel and air delivery system for a fuel cell of claim 1 including an air sensor member connected to the air inlet member.
7. The integrated fuel and air delivery system for a fuel cell of claim 6 wherein the air sensor member includes a sensor manifold having an air inlet drawing air in from an ambient source and an air outlet connected to a sensor, the sensor manifold including another air inlet from the sensor and another air outlet linked with the pump.
8. The integrated fuel and air delivery system for a fuel cell of claim 2 wherein the fuel sensor member is further connected to the air outlet member.
9. The integrated fuel and air delivery system for a fuel cell of claim 1 wherein the air outlet member includes a plurality of mixing channels defining an accumulation chamber.
10. The integrated fuel and air delivery system for a fuel cell of claim 2 wherein the fuel input and output member includes a fuel inlet, a fuel pressure tap for a pressure sensor, a fuel outlet to a valve member, a fuel inlet to the valve member and a fuel pass through.
11. The integrated fuel and air delivery system for a fuel cell of claim 10 wherein the fuel sensor member includes a sensor manifold that is connected with the fuel input and output member.
12. The integrated fuel and air delivery system for a fuel cell of claim 11 wherein the sensor manifold includes a fuel inlet from the valve member, a fuel outlet to a sensor, another fuel inlet from the sensor, another fuel outlet to the air outlet member and a blended air fuel outlet for connecting to the fuel cell.
13. The integrated fuel and air delivery system for a fuel cell of claim 1 wherein the air outlet member includes formations for damping pulses introduced to the fuel and air from the pump.
14. The integrated fuel and air delivery system for a fuel cell of claim 13 wherein the fuel input and output member includes a fuel inlet, a fuel pressure tap for a pressure sensor, a fuel outlet to a valve member, a fuel inlet to the valve member, a fuel pass through and a blended fuel air output for connection to the fuel cell.
15. The integrated fuel and air delivery system for a fuel cell of claim 14 including a mixing member having an air inlet from the pump, an air inlet from the air sensor member, a fuel inlet from the valve member, a fuel inlet from the fuel sensor, a mixing chamber and a fuel pass through connecting the mixing chamber with the fuel input and output member.
16. An integrated fuel and air delivery system for a fuel cell comprising:
at least one pump;
an air inlet member connected to the pump;
an air outlet member connected to the pump;
a fuel input and output member linked with the air outlet member;
a fuel sensor member connected to the fuel input and output member;
wherein desired quantities of fuel and air are mixed in the air outlet member and wherein resonance of the fuel and air are removed prior to introduction into the fuel cell and wherein the integrated fuel and air delivery system is self supporting for linking with the fuel cell.
17. An integrated fuel and air delivery system for a fuel cell comprising:
at least one pump;
an air inlet member connected to the pump;
an air outlet member connected to the pump; and
a mixing member connected to the air outlet member;
wherein desired quantities of fuel and air are mixed in the mixing member and wherein resonance of the fuel and air are removed prior to introduction into the fuel cell.
18. The integrated fuel and air delivery system for a fuel cell of claim 17 including a fuel input and output member connected to the mixing member, a fuel sensor member connected to the fuel input and output member, an air sensor connected with the air outlet member and a fuel sensor member connected to the fuel input and output member.
19. The integrated fuel and air delivery system for a fuel cell of claim 17 wherein the integrated fuel and air delivery system is self supporting for linking with a fuel cell.
20. The integrated fuel and air delivery system for a fuel cell of claim 17 wherein pulses applied to the fuel and air from the pump are dampened prior to introduction into the fuel cell.