1. A semiconductor construction, comprising:
a semiconductor substrate;
a first layer comprising silicon and nitrogen over the substrate;
a second layer comprising at least 50 weight % carbon over and physically against the first layer; and
a third layer consisting essentially of a photoresist system over and physically against the second layer.
2. The construction of claim 1 wherein the first layer comprises silicon, oxygen and nitrogen.
3. The construction of claim 1 wherein the first layer consists essentially of silicon oxynitride.
4. The construction of claim 1 wherein the second layer comprises carbon-hydrogen bonds.
5. The construction of claim 1 wherein the second layer comprises a surfactant.
6. The construction of claim 1 wherein the second layer comprises a polymer.
7. The construction of claim 1 wherein the second layer comprises a cross-linked polymer.
8. The construction of claim 1 wherein the second layer comprises an acrylic polymer.
9. The construction of claim 1 wherein the second layer comprises a component that absorbs light having a wavelength within a region from 150 nanometers to 250 nanometers.
10. The construction of claim 1 wherein the photoresist system comprises a chemically-amplified photoresist.
11. A semiconductor construction, comprising:
a semiconductor substrate;
a first layer comprising silicon and nitrogen over the substrate;
a second layer over and physically against the first layer, the second layer being an organic material comprising carbon-hydrogen bonds; and
a third layer consisting essentially of a photoresist system over and physically against the second layer.
12. The construction of claim 11 wherein the first layer comprises silicon, oxygen and nitrogen.
13. The construction of claim 11 wherein the first layer consists essentially of silicon oxynitride.
14. The construction of claim 11 wherein the second layer comprises a polymer.
15. The construction of claim 11 wherein the second layer comprises a cross-linked polymer.
16. The construction of claim 11 wherein the second layer comprises an acrylic polymer.
17. The construction of claim 11 wherein the second layer comprises a component that absorbs light having a wavelength within a region from 150 nanometers to 250 nanometers.
18. The construction of claim 11 wherein the photoresist system comprises a chemically-amplified photoresist.
19. A method of forming a semiconductor construction, comprising:
providing a semiconductor substrate;
forming a first layer comprising silicon and nitrogen over the substrate;
forming a second layer comprising at least 50 weight % carbon over and physically against the first layer; and
forming a third layer consisting essentially of a photoresist system over and physically against the second layer.
20. The method of claim 19 further comprising exposing the photoresist system to patterned light and subsequently heating the photoresist system; the second layer releasing acid into the photoresist system during the heating; after the heating, exposing the photoresist system to a developing solvent.
21. The method of claim 19 wherein the first layer comprises silicon, oxygen and nitrogen.
22. The method of claim 19 wherein the first layer consists essentially of silicon oxynitride.
23. The method of claim 19 wherein the forming the second layer comprises spin-coating the second layer across the first layer.
24. The method of claim 19 wherein the second layer comprises a surfactant.
25. The method of claim 19 wherein the second layer comprises a polymer.
26. The method of claim 19 wherein the second layer comprises a cross-linked polymer.
27. The method of claim 19 wherein the second layer comprises an acrylic polymer.
28. The method of claim 19 wherein the second layer comprises a component that absorbs light having a wavelength within a region from 150 nanometers to 250 nanometers.
29. A method of forming a semiconductor construction, comprising:
providing a semiconductor substrate;
forming a first layer comprising silicon and nitrogen over the substrate;
forming a second layer comprising at least 50 weight % carbon over the first layer;
forming a third layer consisting essentially of a photoresist system over and physically against the second layer;
exposing a first portion of the third layer radiation while not exposing a second portion to the radiation;
subjecting the third layer to conditions which cause either the exposed first portion or unexposed second portion of the photoresist system to release acid; the second layer also releasing acid as the third layer is exposed to the conditions; and
after subjecting the third layer to the conditions, removing either the first or second portion selectively relative to the other of the first and second portion.
30. The method of claim 29 wherein the conditions which cause either the exposed first portion or unexposed second portion of the photoresist system to release acid comprise heating of the third layer to a temperature of at least about 90 C.
31. The method of claim 29 wherein the first layer comprises silicon, oxygen and nitrogen.
32. The method of claim 29 wherein the first layer consists essentially of silicon oxynitride.
33. The method of claim 29 wherein the forming the second layer comprises spin-coating the second layer across the first layer.
34. The method of claim 29 wherein the second layer comprises a surfactant.
35. The method of claim 29 wherein the second layer comprises a polymer.
36. The method of claim 29 wherein the second layer comprises a cross-linked polymer.
37. The method of claim 29 wherein the second layer comprises an acrylic polymer.
38. The method of claim 29 wherein the second layer comprises a component that absorbs light having a wavelength within a region from 150 nanometers to 250 nanometers.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A face-wearing humidifier being generally symmetrical about a longitudinal center line, comprising:
a moisture-permeable skin-side surface sheet to be directed toward a skin;
an outer surface sheet to be directed outward;
a heat-generating composition for generating steam, said composition interposed between the skin-side surface sheet and the outer surface sheet,
wherein the humidifier is divided into:
a central non heat-generating belt extending along the longitudinal centerline;
a pair of inner heat-generating regions located laterally outside but symmetrically about the central non heat-generating belt;
lateral non heat-generating belts located laterally outside the inner heat-generating regions and extending longitudinally in parallel or not in parallel with but disposed symmetrically about the central non heat-generating belt; and
outer heat-generating regions located laterally outside the lateral non heat-generating belts but symmetrically about the central non heat-generating belt,
wherein the heat-generating composition, interposed between the skin-side surface sheet and the outer surface sheet, is disposed in the inner heat-generating regions and the outer heat-generating regions, but not disposed in the central non heat-generating belt and the lateral non heat-generating belts,
wherein the humidifier is deformable around the central non heat-generating belt and the lateral non heat-generating belts se to follow the shape of a face.
2. A face-wearing humidifier according to claim 1, wherein the humidifier has a peripheral edge bowed laterally outward with respect to the longitudinal centerline, wherein an upper portion above a lateral centerline has a larger area than a lower portion below the lateral centerline.
3. A face-wearing humidifier according to claim 1, wherein at least the skin-side surface sheet and the outer surface sheet are joined together in the central non heat-generating belt and the lateral non heat-generating belts, and at least the skin-side surface sheet and the outer surface sheet are joined together also in a given width of a peripheral belt extending all along the peripheral edge.
4. A face-wearing humidifier according to claim 1, wherein lateral belts in which at least the skin-side surface sheet and the outer surface sheet are joined together are provided laterally outside the lateral non heat-generating belts to extend laterally below the outer heat-generating regions, wherein non heat-generating regions which are defined between the lateral belts and the peripheral belt and in which the heat-generating composition is not present are provided below the outer heat-generating regions.
5. A face-wearing humidifier according to claim 1, wherein a foamed plastic sheet with steam passages passing through it from the top to the bottom and closed cells formed therein is disposed between the heat-generating composition and the skin-side surface sheet.
6. A face-wearing humidifier according to claim 1, wherein the heat-generating composition comprises metal powder, a salt, a water retention agent and moisture.
7. A face-wearing humidifier according to claim 6, wherein the heat-generating composition comprises carbon for facilitating oxidation of the metal powder.