1. A method, comprising:
identifying a target depth of a metal silicide region to be formed in a silicon-containing semiconductor region formed above a substrate;
forming a dopant profile in said silicon-containing semiconductor region along a depth direction of said silicon-containing semiconductor region on the basis of said target depth so as to obtain a local maximum of a dopant concentration near said target depth; and
forming said metal silicide region on the basis of said target depth.
2. The method of claim 1, wherein forming said dopant profile comprises performing an ion implantation process, wherein an implantation dose and energy are controlled to substantially create said dopant profile.
3. The method of claim 2, wherein said ion implantation process comprises at least one first implantation step with a first dopant species of a first conductivity type.
4. The method of claim 3, wherein said dopant profile is substantially determined by said first dopant species.
5. The method of claim 3, wherein said ion implantation process comprises at least one second implantation step with a second dopant species other than said first dopant species, wherein said first and second dopant species substantially determine said local maximum.
6. The method of claim 1, wherein forming said dopant profile comprises introducing a dopant species by at least one of deposition and diffusion.
7. The method of claim 1, wherein said silicon-containing semiconductor region including said dopant profile represents at least one of a drain region and source region of a field effect transistor.
8. The method of claim 1, wherein forming said metal silicide region comprises depositing a layer of refractory metal above said silicon-containing semiconductor region and heat treating said substrate so as to initiate metal diffusion to form said metal silicide.
9. The method of claim 8, wherein at least one of a thickness of said layer of refractory metal, a temperature of said heat treatment and a duration of said heat treatment is controlled so as to stop a silicide growth substantially at said target depth.
10. A method, comprising:
identifying a first target depth for a metal silicide region for a drain and source region of a first specified transistor type to be formed on one or more substrates;
forming said drain and source regions of said first specified transistor type on one or more substrates with a dopant profile, with respect to a depth direction of said one or more substrates, on the basis of said first target depth so as to obtain, for increasing depth, an increasing dopant concentration when approaching said first target depth; and
forming said metal silicide region in said drain and source regions of the first specified transistor type on the basis of said first target depth.
11. The method of claim 10, wherein forming said drain and source regions comprises performing an ion implantation process, wherein implantation dose and energy are controlled to substantially create said dopant profile.
12. The method of claim 11, wherein said ion implantation process comprises at least one first implantation step with a first dopant species of a first conductivity type.
13. The method of claim 12, wherein said dopant profile is substantially determined by said first dopant species.
14. The method of claim 12, wherein said ion implantation process comprises at least one second implantation step with a second dopant species other than said first dopant species, wherein said first and second dopant species substantially determine said dopant profile.
15. The method of claim 10, wherein forming said drain and source regions comprises introducing a dopant species by at least one of deposition and diffusion.
16. The method of claim 10, wherein forming said metal silicide region comprises depositing a layer of refractory metal above a silicon-containing semiconductor region formed on said one or more substrates and heat treating said one or more substrates to initiate metal diffusion to form said metal silicide.
17. The method of claim 16, wherein at least one of a thickness of said layer of refractory metal, a temperature of said heat treatment and a duration of said heat treatment is controlled so as to stop the silicide growth substantially at said first target depth.
18. The method of claim 10, further comprising:
identifying a second target depth for a second metal silicide region to be formed in a drain and source region of a second specified transistor type to be formed on said one or more substrates;
forming said drain and source regions of said second specified transistor type with a second dopant profile, with respect to said depth direction of said one or more substrates, on the basis of said second target depth so as to obtain, for increasing depth, an increasing second dopant concentration when approaching said second target depth; and
forming said second metal silicide region in said drain and source regions of the second specified transistor type so as to stop a metal silicide growth substantially at said second target depth.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for producing a liquid discharging head including an element substrate that is provided with a discharge opening for discharging a liquid and a supporting member that supports the element substrate, the element substrate having a first surface and a second surface that is opposite to the first surface, the supporting member having a height reference surface and an element-substrate bonding surface to which the first surface is bonded with an adhesive, the method comprising the steps of:
measuring a height h of the element-substrate bonding surface from the height reference surface;
applying the adhesive to the element-substrate bonding surface; and
causing the first surface to oppose the element-substrate bonding surface with the adhesive being provided therebetween, and disposing the second surface at a predetermined height m from the height h that has been measured to harden the adhesive at a portion between the element-substrate bonding surface and the element substrate.
2. The method according to claim 1, wherein a laser is used as a unit configured to measure the height h.
3. The method according to claim 1, wherein a portion where the height h is measured is the entire element-substrate bonding surface.
4. The method according to claim 1, wherein, when the element-substrate bonding surface is rectangular, a portion where the height h is measured is one of four corners or more than one of the four corners of the element-substrate bonding surface.
5. A method for producing a liquid discharging head including an element substrate that is provided with a discharge opening for discharging a liquid and a supporting member that supports the element substrate, the element substrate having a first surface and a second surface that is opposite to the first surface, the supporting member having a height reference surface and an element-substrate bonding surface to which the first surface is bonded with an adhesive, the method comprising the steps of:
providing a height measurement surface at the supporting member, the height measurement surface being a surface where a height h from the height reference surface is measured, the height of the height measurement surface from the height reference surface being the same as a height of the element-substrate bonding surface;
measuring the height h of the height measurement surface from the height reference surface;
applying the adhesive to the element-substrate bonding surface; and
causing the first surface to oppose the element-substrate bonding surface with the adhesive being provided therebetween, and disposing the second surface at a predetermined height m from the height h that has been measured to harden the adhesive at a portion between the element-substrate bonding surface and the element substrate.
6. The method according to claim 5, wherein the step for measuring the height h is performed after the step for applying the adhesive, or the step for applying the adhesive is performed after the step for measuring the height h.
7. The method according to claim 5, wherein one height measurement surface or a plurality of the height measurement surfaces are provided, and
wherein, when the height measurement surface or each height measurement surface is provided continuously with the element-substrate bonding surface and the element-substrate bonding surface is rectangular, the one height measurement surface is provided adjacent to one of four corners of the element-substrate bonding surface or the plurality of the height measurement surfaces are provided at more than one of the four corners of the element-substrate bonding surface.
8. A liquid discharging head comprising:
an element substrate that is provided with a discharge opening for discharging a liquid; and
a supporting member that supports the element substrate, the supporting member having an element-substrate bonding surface to which the element substrate is bonded with an adhesive,
wherein the supporting member has a height reference surface and a height measurement surface whose height from the height reference surface is measured, and
wherein the height of the height measurement surface from the height reference surface is the same as a height of the element-substrate bonding surface from the height reference surface.
9. The liquid discharging head according to claim 8, wherein the height measurement surface is provided continuously with the element-substrate bonding surface.
10. The liquid discharging head according to claim 8, wherein one height measurement surface or a plurality of the height measurement surfaces are provided, and
wherein, when the element-substrate bonding surface is rectangular, the one height measurement surface is provided adjacent to one of four corners of the element-substrate bonding surface or the plurality of the height measurement surfaces are provided adjacent to more than one of the four corners of the element-substrate bonding surface.
11. The liquid discharging head according to claim 8, wherein a plurality of the height measurement surfaces are provided, and
wherein the plurality of the height measurement surfaces are disposed along one side or a plurality of sides of an outer periphery of the element-substrate bonding surface.
12. A method for producing a liquid discharging head including an element substrate that is provided with a discharge opening for discharging a liquid and a supporting member that supports the element substrate, the element substrate having a first surface and a second surface that is opposite to the first surface, the supporting member having a height reference surface and an element-substrate bonding surface to which the first surface is bonded with an adhesive, the method comprising the steps of:
measuring a height h of the element-substrate bonding surface from the height reference surface;
applying the adhesive to the element-substrate bonding surface; and
with the element-substrate bonding surface and the first surface opposing each other with the adhesive therebetween and the adhesive being in contact with both of the element-substrate bonding surface and the first surface, disposing the second surface at a predetermined height m from the height h that has been measured, and hardening the adhesive at a portion between the element-substrate bonding surface and the element substrate.