1. An ionization gauge comprising:
an electron source that generates electrons;
a collector electrode disposed in an ionization volume, the collector electrode configured to collect ions formed by the impact between the electrons and gas molecules; and
an electrostatic shutter configured to control the flow of electrons between the electron source and the ionization volume.
2. The ionization gauge according to claim 1 wherein the electron source is a cold cathode gauge.
3. The ionization gauge according to claim 1 wherein the electrostatic shutter is configured to control the flow of electrons based on the number of electrons in the ionization volume.
4. The ionization gauge according to claim 1 further comprising an anode defining the ionization volume.
5. The ionization gauge according to claim 4 wherein the electrostatic shutter is configured to control the flow of electrons based on the electron current generated in the anode.
6. The ionization gauge according to claim 5 wherein the electron current generated in the anode is measured by an ammeter.
7. A method of measuring a gas pressure from gas molecules and atoms, comprising:
generating electrons in an electron source;
regulating the flow of electrons between the electron source and an ionization volume; and
collecting ions formed by an impact between the electrons and the gas molecules and atoms in the ionization volume.
8. The method according to claim 3 wherein the electron source is a cold cathode gauge.
9. An ionization gauge comprising:
an electron source that generates electrons;
a first collector electrode, and a second collector electrode with both being disposed in an ionization volume, the first and second collector electrodes configured to collect ions formed by the impact between the electrons and gas molecules; and
an electrostatic shutter configured to control the flow of electrons between the electron source and the ionization volume.
10. The ionization gauge according to claim 9 wherein the electrostatic shutter is configured to control the flow of electrons based on the number of electrons in the ionization volume.
11. The ionization gauge according to claim 9 further comprising an anode defining the ionization volume.
12. The ionization gauge according to claim 11 wherein the electrostatic shutter is configured to control the flow of electrons based on the electron current generated in the anode.
13. The ionization gauge according to claim 11 wherein the electron current generated in the anode is measured by an ammeter.
14. The ionization gauge according to claim 9 wherein the electrostatic shutter is pulsed to control the flow of electrons between the electron source and the ionization volume.
15. The method according to claim 7, further comprising regulating the flow of electrons between the electron source and the ionization volume by filtering the flow to limit the flow to a predetermined energy range between the source and the ionization volume.
16. The method according to claim 15, further comprising filtering the flow by electrostatic filtering.
17. The method according to claim 15, further comprising filtering the flow by modulating a geometry of the ionization gauge.
18. The method according to claim 7, further comprising regulating the flow of electrons between the electron source and the ionization volume by modulating a voltage of the electron source in response to pressure.
19. The method according to claim 7, further comprising regulating the flow of electrons between the electron source and the ionization volume by modulating an ionization gauge geometry to produce an electron current in response to a pressure.
20. An ionization gauge comprising:
an electron source that generates electrons;
a collector electrode disposed in an ionization volume, the collector electrode configured to collect ions formed by the impact between the electrons, and gas molecules;
an electrostatic shutter configured to control the flow of electrons between the electron source, and the ionization volume; and
an envelope surrounding the electron source, the electrostatic shutter and the envelope permitting electrons from a predetermined electric potential to enter into the ionization volume.
21. The ionization gauge of claim 20, wherein the electron source has an anode connected to ground, and wherein the envelope is connected to a negatively charged voltage potential to permit electrons located near the anode of the electron source to enter the ionization volume.
22. The ionization gauge of claim 20, wherein the electron source is a cold cathode ionization source, and wherein the cold cathode source includes an anode connected to an anode voltage source, and wherein the envelope is grounded allowing electrons located near the envelope to enter the ionization volume.
23. The ionization gauge of claim 22, further comprising an annular ring of electrostatic shutters being located at substantially a periphery of the envelope.
24. A method of measuring a gas pressure from gas and atoms comprising:
generating electrons from a source;
regulating the flow of electrons from the source to the ionization volume;
controlling the electron energy from the electron source; and
collecting ions formed by an impact between the electrons and gas molecules, and atoms in the ionization volume.
25. The method of claim 24, further comprising controlling the electron energy from the electron source by operating an anode of the electron source at a ground potential, and operating an envelope that surrounds the anode of the electron source at a predetermined negative voltage potential.
26. The method of claim 24, further comprising controlling the electron energy from the electron source by operating an anode of the electron source at a predetermined voltage potential, and operating an envelope that surrounds the anode at a ground potential.
27. The ionization gauge according to claim 1 wherein the electrostatic shutter is pulsed to control the flow of electrons between the electron source and the ionization volume.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A surface modification process for an immersion photoresist comprising:
a) coating a photoresist layer onto a substrate;
b) applying a topcoat layer onto the photoresist layer: and
c)applying a fluorinated polymer onto the topcoat layer on the photoresist layer.
2. The surface modification process of claim 1 wherein the deposited fluorinated polymer is selected from the group consisting of homopolymers or copolymers of poly(fluoroacrylates), poly(fluoromethacrylates), poly(fluorodioxolanes), poly(tetrafluoroethylenes), poly(tetrafluoroethylene oxides), and poly(difluoromethylene oxides) and combinations thereof.
3. The surface modification process of claim 1 wherein the fluorinated polymer is a composition comprised of a fluorinated resin and a fluorinated solvent.
4. The surface modification process of claim 3 wherein the fluorinated resin is selected from the group consisting of homopolymers or copolymers of poly(fluoroacrylates), poly(fluoromethacrylates), poly(fluorodioxolanes), poly(tetrafluoroethylenes), poly(tetrafluoroethylene oxides), and poly(difluoromethylene oxides), and combinations thereof.
5. The surface modification process of claim 3 wherein the fluorinated solvent is selected from the group consisting of perfluorotributylamine, perfluoro-2-butyltetrahydrofuran, mixtures of perfluorohydrocarbons and combinations thereof.
6. The surface modification process of claim 2 wherein the fluorinated polymer is (Poly(1,1,2 4,4,5,5,6,7,7-decafluoro-3-oxa-1,6-heptadiene).
7. The surface modification process of claim 1 further comprising the step of diluting the fluorinated polymer before deposition.
8. The surface modification process of claim 7 wherein the fluorinated polymer is diluted with a fluorinated organic solvent.
9. The surface modification process of claim 8 wherein the fluorinated organic solvent is selected from the group consisting of perfluorotributylamine, perfluoro-2-butyltetrahydrofuran, mixtures of perfluorohydrocarbons and combinations thereof.
10. The surface modification process of claim 8 wherein the fluorinated organic solvent is perfluoro-2-butyltetrahydrofuran.
11. The surface modification process of claim 8 wherein the fluorinated organic solvent is perfluorotributylamine.
12. The surface modification process of claim 1 wherein the fluorinated polymer layer is less than about 5 nm.
13. (canceled)
14. A radiation-sensitive multi-layer structure comprising:
a) a substrate;
b) a photoresist layer on top of the substrate;
c) a topcoat layer on top of the photoresist layer; and
d) a fluorinated polymer layer on top of the topcoat layer.
15. The radiation-sensitive multi-layer structure of claim 14 wherein the fluorinated polymer layer is a fluorinated polymer composition and a diluter.
16. The radiation-sensitive multi-layer structure of claim 15 wherein the fluorinated polymer composition is selected from the group consisting of homopolymers or copolymers of poly(fluoroacrylates), poly(fluoromethacrylates), poly(fluorodioxolanes), poly(tetrafluoroethylenes), poly(tetrafluoroethylene oxides), and poly(difluoromethylene oxides) and combinations thereof.
17. The radiation-sensitive multi-layer structure of claim 15 wherein the fluorinated polymer composition is comprised of a fluorinated resin and a fluorinated solvent.
18. The radiation-sensitive multi-layer structure of claim 17 wherein the fluorinated resin is selected from the group consisting of homopolymers or copolymers of poly(fluoroacrylates), poly(fluoromethacrylates), poly(fluorodioxolanes), poly(tetrafluoroethylenes), poly(tetrafluoroethylene oxides), and poly(difluoromethylene oxides), and combinations thereof.
19. The radiation-sensitive multi-layer structure of claim 17 wherein the fluorinated solvent is selected from the group consisting of perfluorotributylamine, perfluoro-2-butyltetrahydrofuran mixtures of perfluorohydrocarbons and combinations thereof.
20. The radiation-sensitive multi-layer structure of claim 15 wherein the diluter is selected from the group consisting of perfluorotributylamine, perfluoro-2-butyltetrahydrofuran, mixtures of perfluorohydrocarbons and combinations thereof.
21. The radiation-sensitive multi-layer structure of claim 14 wherein the fluorinated layer is (Poly(1,1,2,4,4,5,5,6,7,7-decafluoro-3-oxa-1,6-heptadiene) and perfluorotributylamine.
22. The radiation-sensitive multi-layer structure of claim 14 wherein the fluorinated layer is less than about 5 nm.
23. A process for tuning a contact angle of a photoresist layer comprising:
a) providing a substrate;
b) applying a photoresist layer onto the substrate;
c) applying a topcoat layer onto the photoresist layer; and
d) applying a fluorinated polymer onto the topcoat layer on the photoresist layer in order to tune the contact angle of the top surface of the photoresist layer.
24. The tuning process of claim 23 wherein the contact angle is from about 60 to about 120 degrees.
25. The tuning process of claim 23 wherein the fluorinated polymer layer is less than about 5 nm.
26. The tuning process of claim 23 wherein the fluorinated polymer is selected from the group consisting of homopolymers or copolymers of poly(fluoroacrylates), poly(fluoromethacrylates), poly(fluorodioxolanes), poly(tetrafluoroethylenes), poly(tetrafluoroethylene oxides), poly(difluoromethylene oxides), and combinations thereof.
27. The tuning process of claim 23 wherein the fluorinated polymer is comprised of a fluorinated resin and a fluorinated solvent.
28. The tuning process of claim 27 wherein the fluorinated resin is selected from the group consisting of homopolymers or copolymers of poly(fluoroacrylates), poly(fluoromethacrylates), poly(fluorodioxolanes), poly(tetrafluoroethylenes), poly(tetrafluoroethylene oxides), poly(difluoromethylene oxides) and combinations thereof.
29. The tuning process of claim 27 wherein the fluorinated solvent is selected from the group consisting of perfluorotributylamine, perfluoro-2-butyltetrahydrofuran mixtures of perfluorohydrocarbons, and combinations thereof.
30. The tuning process of claim 23 further comprising the step of diluting the fluorinated polymer before application.
31. The tuning process of claim 30 wherein the diluter is selected from the group consisting of perfluorotributylamine, perfluoro-2-butyltetrahydrofuran, mixtures of perfluorohydrocarbons, and combinations thereof.
32. The tuning process of claim 30 wherein the diluter is perfluorotributylamine.
33. The tuning process of claim 30 wherein the diluter is perfluoro-2-butyltetrahydrofuran.
34. (canceled)
35. A process for manufacturing a radiation-sensitive multi-layer structure comprising:
a) providing a substrate;
b) applying a photoresist layer;
c) baking the photoresist layer;
d) optionally applying a topcoat layer and baking the topcoat layer;
e) applying a fluorinated polymer layer;
f) exposing the fluorinated layer to radiation;
g) baking the radiation-sensitive multi-layer structure;
h) developing the radiation-sensitive multi-layer structure; and
i) rinsing the radiation-sensitive multi-layer structure.