What is claimed is:
1. A light source unit for a vehicular lamp, comprising: a semiconductor light-emitting element disposed on an optical axis of said light source unit with its light output directed in a predetermined direction substantially orthogonal to said optical axis, and a translucent block covering said semiconductor light-emitting element and having a reflective coating formed on at least a portion of an outer surface thereof to form a reflector comprising a first reflecting surface on a forward side of said translucent block in said predetermined direction with respect to said semiconductor light-emitting element, said first reflecting surface collecting light emitted by said semiconductor light-emitting element and reflecting said light forward in a direction of said optical axis.
2. The light source unit according to claim 1, wherein a distance in said predetermined direction from the semiconductor light-emitting element to said first reflecting surface is 20 mm or less.
3. The light source unit according to claim 1, wherein a distance in said predetermined direction from the semiconductor light-emitting element to said first reflecting surface is approximately 10 mm.
4. The light source unit according to claim 1, wherein said reflector comprises a second reflecting surface at a front end thereof in the direction of the optical axis of said first reflecting surface, said second reflecting surface being inclined forward in said direction of said optical axis.
5. The light source unit according to claim 1, wherein an emitting end face for emitting light reflected by said reflector is substantially fan shaped about said optical axis.
6. The light source unit according to claim 5, wherein a lower edge of said emitting end face comprises a horizontal cut-off line forming section having a first portion extending horizontally in a leftward direction from said optical axis and a second portion forms an oblique cut-off line forming section extending obliquely and downward from said optical axis.
7. The light source unit according to claim 4, wherein said reflector comprises a third reflecting surface, said third reflecting surface being formed on a substantially planar surface of said translucent block opposite said second reflecting surface and extending rearward from an emitting end face of said translucent block for reflecting light reflected by said first reflecting surface toward said emitting end face.
8. The light source unit according to claim 1, further comprising a projection lens provided at a predetermined position on a forward side in said direction of said optical axis with respect to said reflector.
9. The light source unit according to claim 1, wherein said reflector is substantially dome shaped in a region of said first reflecting surface, and wherein said first reflecting surface is substantially elliptical in a cross section in said predetermined direction and including said optical axis.
10. A light source unit for a vehicular lamp, comprising: a semiconductor light-emitting element disposed on an optical axis of said light source unit with its light output directed in a predetermined direction substantially orthogonal to said optical axis, and a substantially dome-shaped translucent block covering said semiconductor light-emitting element and having a reflective coating formed on at least portion of an outer surface thereof to form a reflector comprising a first reflecting surface on a forward side of said translucent block in said predetermined direction with respect to said semiconductor light-emitting element, said first reflecting surface being substantially elliptical in a cross section in said predetermined direction and including said optical axis, said first reflecting surface collecting light emitted by said semiconductor light-emitting element and reflecting said light forward in a direction of said optical axis, a second reflecting surface at a front end of said first reflecting surface in the direction of said optical axis, said second reflecting surface being inclined forward in said direction of said optical axis, and a third reflecting surface formed on a substantially planar surface of said translucent block opposite said second reflecting surface and extending rearward from an emitting end face of said translucent block for reflecting light reflected by said first reflecting surface toward said emitting end face, said emitting end face being substantially fan shaped about said optical axis, a lower edge of said emitting end face comprising a horizontal cut-off line forming section having a first portion extending horizontally in a leftward direction from said optical axis and a second portion forming an oblique cut-off line forming section extending obliquely and downward from said optical axis.
11. The light source unit according to claim 10, wherein a distance in said predetermined direction from the semiconductor light-emitting element to said first reflecting surface is 20 mm or less.
12. The light source unit according to claim 10, wherein a distance in said predetermined direction from the semiconductor light-emitting element to said first reflecting surface is approximately 10 mm.
13. The light source unit according to claim 10, further comprising a projection lens provided at a predetermined position on a forward side in said direction of said optical axis with respect to said reflector.
14. The light source unit according to claim 10, wherein said semiconductor light-emitting element is positioned at a first focal point of said first reflecting surface.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a semiconductor substrate including an active element formation face on which an active element is formed;
detection electrodes detecting a remaining amount of ink by being wet in the ink;
an antenna transmitting and receiving information;
a storage circuit storing information relating to the ink; and
a control circuit controlling the detection electrodes, the antenna, and the storage circuit.
2. The semiconductor device according to claim 1, wherein
the antenna and the detection electrodes are included in a layer and disposed on or above the active element formation face.
3. The semiconductor device according to claim 2, further comprising:
a passivation film interposed between the active element formation face and the layer including the detection electrodes and the antenna, the layer being a conductive layer.
4. The semiconductor device according to claim 3, further comprising:
a protective film formed so as to cover the conductive layer; and
an opening formed in the protective film, exposing at least a part of the conductive layer, wherein
the detection electrodes are constituted by the part of the conductive layer exposed through the opening.
5. The semiconductor device according to claim 3, further comprising:
a protective film formed so as to cover the conductive layer;
an opening formed in the protective film, exposing at least a part of the conductive layer; and
a bump formed on the conductive layer exposed through the opening, wherein
the detection electrodes are constituted by the bump.
6. The semiconductor device according to claim 1, further comprising:
a plated layer formed on a surface of the detection electrodes.
7. The semiconductor device according to claim 1, further comprising:
a dielectric layer formed on or below a bottom layer of the detection electrodes and the antenna.
8. The semiconductor device according to claim 2, wherein
the antenna and the detection electrodes are formed directly on the active element formation face using the same conductive material as that constituting the active element formed on the semiconductor substrate.
9. The semiconductor device according to claim 1, further comprising:
three or more detection electrodes.