1. A method of manufacture of a GaN material, the method comprising:
providing a wafer of silicon including at least one first surface suitable for use as a substrate for CVD diamond synthesis,
growing a layer of CVD diamond of a thickness greater than 300 \u03bcm and having a growth face onto the first surface of the silicon wafer,
reducing the thickness of the silicon wafer to a predetermined level,
providing a second surface on the silicon wafer that is suitable for further synthesis of at least one semiconductor layer suitable for use in electronic devices or synthesis of electronic devices on the second surface itself, and
growing GaN on the second surface of the silicon wafer.
2. The method as claimed in claim 1, wherein the silicon is monocrystalline silicon.
3. The method as claimed in claim 2, wherein the monocrystalline silicon wafer is a {111} monocrystalline silicon wafer.
4. The method as claimed in claim 1, wherein the silicon wafer is processed such that at least the opposed large surfaces are substantially parallel.
5. The method as claimed in claim 1, wherein the growth face of the CVD diamond layer is processed to become substantially flat and parallel to the first surface of the silicon wafer.
6. The method as claimed in claim 1, wherein the second surface of the silicon wafer is opposed to- the first surface of the wafer.
7. The method as claimed in claim 1, wherein an AlGaN buffer layer is used.
8. The method according to claim 1, wherein reduction of the silicon wafer is accomplished by using lapidary techniques.
9. The method according to claim 1, wherein the silicon wafer is reduced until less than 50 \u03bcm thick.
10. The method according to claim 9, wherein the silicon wafer is reduced until less than 20 \u03bcm thick.
11. The method according to claim 9, wherein the silicon wafer is reduced until less than 10 \u03bcm thick.
12. The method according to claim 9, wherein the silicon wafer is reduced until less than 5 \u03bcm thick.
13. The method according to claim 1, further comprising polishing the silicon surface to a smooth surface suitable for the growth of GaN.
14. The method according to claim 1, wherein the GaN layer is preceded or combined with an AlGaN buffer layer.
15. A method of producing GaN material, the method comprising:
providing a wafer of monocrystalline silicon which has been processed so that the large {111} surfaces are parallel and at least a first surface is in a condition suitable for use as a substrate for CVD diamond synthesis,
growing a layer of CVD diamond of a thickness greater than 300 \u03bcm and having a growth face onto the first surface of the monocrystalline silicon wafer,
reducing the thickness of the silicon wafer to a predetermined level,
providing a second surface on the silicon wafer suitable for synthesis of semiconductor layers suitable for use in electronic devices, and
growing GaN on the second surface of the silicon wafer.
16. The method as claimed in claim 15, further comprising processing the growth face of the CVD diamond layer to become substantially flat and parallel to the first surface of the silicon wafer.
17. The method as claimed in claim 16, further comprising mounting the processed diamond face against a substantially planar reference plate.
18. The method according to claim 15, wherein the layer of CVD diamond on the monocrystalline silicon wafer is greater than 400 \u03bcm.
19. The method according to claim 15, wherein the layer of CVD diamond on the monocrystalline silicon wafer is greater than 500 \u03bcm.
20. The method according to claim 15, wherein the layer of CVD diamond on the monocrystalline silicon wafer is greater than 550 \u03bcm.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of measurement, said method comprising:
detecting light outgoing from at least a portion of a first alignment mark of a substrate, the first alignment mark being at a first surface of the substrate;
based on said detecting, determining a relative position of the first alignment mark and a second alignment mark of the substrate, the second alignment mark being at a second surface of the substrate opposite to the first substrate; and
removing the first alignment mark from the substrate.
2. The method of measurement according to claim 1, wherein said removing the first alignment mark includes removing at least a portion of a layer from the substrate.
3. The method of measurement according to claim 2, wherein the layer consists essentially of a dielectric material.
4. The method of measurement according to claim 2, wherein the layer includes at least one among an oxide and a nitride.
5. The method of measurement according to claim 1, said method further comprising forming a layer over the first alignment mark.
6. The method of measurement according to claim 1, said method further comprising determining a relative position of the second alignment mark and a third alignment mark, the third alignment mark being at the first surface of the substrate.
7. The method of measurement according to claim 6, wherein said determining a relative position of the second alignment mark and a third alignment mark includes determining a position of the third alignment mark while the substrate is in a first orientation, and
wherein said determining a relative position of the first alignment mark and a second alignment mark is performed while the substrate is in a second orientation, and
wherein the substrate in the second orientation is turned over with respect to the substrate in the first orientation.
8. The method of measurement according to claim 7, wherein said determining a relative position of the first alignment mark and a second alignment mark includes detecting light outgoing from both of the first and second surfaces of the substrate while the substrate is in the second orientation.
9. The method of measurement according to claim 6, wherein the first alignment mark extends only into a surface layer of the substrate, and
wherein the second and third alignment marks extend into a portion of the substrate under the surface layer.
10. The method of measurement according to claim 1, said method further comprising determining a relative position of the second alignment mark and a plurality of third alignment marks, the third alignment marks being at the first surface of the substrate.
11. The method of measurement according to claim 10, wherein the plurality of third alignment marks includes at least three alignment marks, each of the three alignment marks being arranged noncollinearly with respect to the other two.
12. The method of measurement according to claim 10, wherein at least one of the plurality of second alignment marks and at least one of the plurality of third alignment marks are substantially directly opposite one another.
13. The method of measurement according to claim 10, wherein at least one of the plurality of second alignment marks and at least one of the plurality of third alignment marks are not directly opposite one another.
14. The method of measurement according to claim 1, said method further comprising determining a relative position of the first alignment mark and a plurality of second alignment marks, the second alignment marks being at a second surface of the substrate opposite to the first surface,
wherein said determining a relative position of the first alignment mark and a plurality of second alignment marks is based on said detecting light outgoing from at least a portion of a first alignment mark.
15. The method of measurement according to claim 14, wherein the plurality of second alignment marks includes at least three alignment marks, each of the three alignment marks being arranged noncollinearly with respect to the other two.
16. The method of measurement according to claim 1, said method further comprising determining a position of a third alignment mark, the third alignment mark being at the first surface of the substrate,
wherein said determining a position of a third alignment mark includes detecting light outgoing from at least a portion of the third alignment mark, and
wherein said detecting outgoing from at least a portion of the third alignment mark occurs at a location on the same side of the substrate as the first surface.
17. The method of measurement according to claim 16, wherein the first alignment mark extends only into a surface layer of the substrate, and
wherein the third alignment mark extends into a portion of the substrate under the surface layer.
18. The method of measurement according to claim 1, said method further comprising, based on said detecting, determining a position of the substrate.
19. The method of measurement according to claim 18, said method further comprising, based on said determining a position of the substrate, exposing a radiation-sensitive portion of a layer on the substrate with a patterned beam of radiation.
20. The method of measurement according to claim 19, said method further comprising, based on said exposing, forming a process layer on the substrate.
21. A device manufactured according to the method according to claim 19.
22. The method of measurement according to claim 19, said method further comprising forming functional elements in the substrate at a location from which the first alignment mark was removed.
23. A method of measurement, said method comprising:
detecting light outgoing from at least a portion of a first alignment mark of a substrate, the first alignment mark being at a first surface of the substrate; and
removing the first alignment mark from the substrate,
wherein said detecting occurs at a location on a side of the substrate opposite to the first surface.
24. The method of measurement according to claim 23, said method further comprising:
detecting light outgoing from at least a portion of another first alignment mark, the other first alignment mark being at a first surface of a substrate; and
removing the other first alignment mark from the substrate,
wherein said detecting light outgoing from at least a portion of another first alignment mark occurs at a location on a side of the substrate opposite to the first surface.
25. The method of measurement according to claim 23, said method further comprising detecting a position of the first alignment mark,
wherein said detecting a position of the first alignment mark is based on said detecting light outgoing from at least a portion of a first alignment mark.
26. The method of measurement according to claim 23, wherein said removing the first alignment mark includes removing at least a portion of a layer from the substrate.
27. The method of measurement according to claim 26, wherein the layer consists essentially of a dielectric material.
28. The method of measurement according to claim 26, wherein the layer includes at least one among an oxide and a nitride.
29. The method of measurement according to claim 23, said method further comprising forming a layer over the first alignment mark.
30. The method of measurement according to claim 23, said method further comprising determining a relative position of the first alignment mark and a second alignment mark, the second alignment mark being at a second surface of the substrate opposite to the first surface,
wherein said determining a relative position of the first alignment mark and a second alignment mark is based on said detecting light outgoing from at least a portion of a first alignment mark.
31. The method of measurement according to claim 30, said method further comprising determining a relative position of the second alignment mark and a third alignment mark, the third alignment mark being at the first surface of the substrate.
32. The method of measurement according to claim 31, wherein the first alignment mark extends only into a surface layer of the substrate, and
wherein the second and third alignment marks extend into a portion of the substrate under the surface layer.
33. The method of measurement according to claim 30, said method further comprising determining a relative position of the second alignment mark and a plurality of third alignment marks, the third alignment marks being at the first surface of the substrate.
34. The method of measurement according to claim 33, wherein the plurality of third alignment marks includes at least three alignment marks, each of the three alignment marks being arranged noncollinearly with respect to the other two.
35. The method of measurement according to claim 23, said method further comprising determining a relative position of the first alignment mark and a plurality of second alignment marks, the second alignment marks being at a second surface of the substrate opposite to the first surface,
wherein said determining a relative position of the first alignment mark and a plurality of second alignment marks is based on said detecting light outgoing from at least a portion of a first alignment mark.
36. The method of measurement according to claim 35, said method further comprising determining a relative position of the second alignment mark and a plurality of third alignment marks, the third alignment marks being at the first surface of the substrate,
wherein the plurality of third alignment marks includes at least three alignment marks, each of the three alignment marks being arranged noncollinearly with respect to the other two, and
wherein at least one of the plurality of second alignment marks and at least one of the plurality of third alignment marks are substantially directly opposite one another.
37. The method of measurement according to claim 35, said method further comprising determining a relative position of the second alignment mark and a plurality of third alignment marks, the third alignment marks being at the first surface of the substrate,
wherein the plurality of third alignment marks includes at least three alignment marks, each of the three alignment marks being arranged noncollinearly with respect to the other two, and
wherein at least one of the plurality of second alignment marks and at least one of the plurality of third alignment marks are not directly opposite one another.
38. The method of measurement according to claim 35, wherein the plurality of second alignment marks includes at least three alignment marks, each of the three alignment marks being arranged noncollinearly with respect to the other two.
39. The method of measurement according to claim 23, said method further comprising, based on said detecting, determining a position of the substrate.
40. The method of measurement according to claim 39, said method further comprising, based on said determining a position of the substrate, exposing a radiation-sensitive portion of a layer on the substrate with a patterned beam of radiation.
41. The method of measurement according to claim 40, said method further comprising, based on said exposing, forming a process layer on the substrate.
42. A device manufactured according to the method according to claim 40.
43. A substrate comprising:
a first alignment mark formed at a first surface of the substrate;
a second alignment mark formed at the first surface of the substrate;
wherein the first alignment mark is formed in a first layer of the substrate, and
wherein the second alignment mark is formed in a second layer of the substrate, the second layer being on the first layer.
44. The substrate of claim 43, said substrate further comprising a third alignment layer formed at a second surface of the substrate different than the first surface.
45. The substrate of claim 43, wherein the second alignment mark does not extend into the first layer.
46. The substrate of claim 43, wherein the second layer consists essentially of at least one of a nitride and an oxide.
47. A method of measurement comprising:
providing a substrate having a temporary alignment mark and a first alignment mark, said marks being at a first surface of a substrate;
turning over the substrate;
determining a position of the substrate, based on light outgoing from at least a portion of the temporary alignment mark and detected at a location on a side of the substrate opposite to the first surface; and
providing a second alignment mark of the substrate at a second surface of the substrate different from the first surface.
48. The method of measurement according to claim 47, said method further comprising removing the temporary alignment mark from the substrate.