1. A polymer bearing cyclic silicon-containing groups of the following general formula (1) or (2):
14
wherein R1, R2, R3, R6, R7, R10, R11, R12, and R13 are independently hydrogen or straight, branched or cyclic alkyl groups of 1 to 20 carbon atoms, R4, R5, R8, and R9 are independently hydrogen, straight, branched or cyclic alkyl groups of 1 to 20 carbon atoms, fluorinated alkyl groups of 1 to 20 carbon atoms, or aryl groups of 6 to 20 carbon atoms, and p, q, r and s are integers of 0 to 10, and 1 pqs20.
2. The polymer of claim 1 comprising recurring units of at least one of the following general formulas (3) to (8):
15
wherein R1 through R13, p, q, r and s are as defined above, R14 is hydrogen or a straight, branched or cyclic alkyl group of 1 to 20 carbon atoms, R15 is hydrogen or an alkyl group of 1 to 10 carbon atoms, t is a number of 0 to 5, u is equal to 0 or 1, and w is a number of 0 to 5.
3. A chemically amplified positive resist composition comprising
(A) the polymer of claim 1 or 2,
(B) a photoacid generator, and
(C) an organic solvent.
4. A chemically amplified positive resist composition comprising
(A) the polymer of claim 1 or 2,
(B) a photoacid generator,
(C) an organic solvent, and
(D) a dissolution inhibitor having an acid labile group.
5. The chemically amplified positive resist composition of claim 3 or 4 further comprising (E) a basic compound.
6. A method for forming a resist pattern, comprising the steps of:
(1) applying the resist composition of claim 3, 4 or 5 onto an organic film on a substrate and baking the composition to form a resist film,
(2) irradiating radiation to the resist film through a photomask,
(3) optionally baking the resist film and then developing the resist film with an aqueous base solution for dissolving the irradiated area of the resist film until the underlying organic film is exposed, thereby forming a resist pattern, and
(4) processing the exposed area of the organic film with an oxygen plasma generated by a dry etching apparatus.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A substrate for use in a microelectronic assembly comprising:
(a) a unitary dielectric structure having first and second regions, said dielectric structure bearing contact elements in said first region and bearing unitary traces extending between said first and second regions, at least some of said traces being connected to at least some of the contact elements; and
(b) a first dielectric encapsulant disposed on said dielectric structure in said first region, said first dielectric encapsulant being disposed so that said contact elements are exposed at a surface of the first dielectric encapsulant in said first region.
2. The substrate as claimed in claim 1 wherein said first dielectric encapsulant reinforces said dielectric structure in said first region so that said first region is more rigid than said second region.
3. The substrate as claimed in claim 1 wherein the contact elements project from a first surface of said dielectric structure and at least a portion of the first dielectric encapsulant forms a layer covering at least a portion of the first surface in the first region, such layer having a top surface remote from the first surface of the substrate, tips of the contact elements being exposed at the top surface of the layer.
4. The substrate as claimed in claim 1 wherein at least a portion of the first dielectric encapsulant forms a wall projecting from said dielectric structure and surrounding at least a portion of the first region.
5. The substrate as claimed in claim 1 further comprising in the first region an optical component affixed to the wall.
6. The substrate as claimed in claim 1 further comprising a conductive shield disposed proximate to said dielectric structure.
7. The substrate as claimed in claim 1 wherein the contact elements are contact pins, contact pads, or a combination thereof.
8. The substrate as claimed in claim 1 wherein the contact elements and the traces are formed from at least one conductive plate.
9. The substrate as claimed in claim 1 wherein in the second region trace ends are provided with electrical terminals.
10. The substrate as claimed in claim 1 wherein widths of at least some of the traces are equal to or smaller than widths of bases of the contact elements, said bases disposed proximate said dielectric structure.
11. The substrate as claimed in claim 10 wherein at least some of the traces have contact areas at least partially surrounding the bases of the contact elements.
12. The substrate as claimed in claim 1 further comprising a second encapsulant flexibly encapsulating the traces at least in the second region.
13. The substrate as claimed in claim 1 further comprising a conductive shield disposed adjacent to said dielectric structure and having an exposed electrical contact.
14. The substrate as claimed in claim 1 wherein the first dielectric encapsulant is molded from an epoxy, a thermoplastic, polyimide, or liquid crystal polymer.
15. The substrate as claimed in claim 1 wherein the first dielectric encapsulant comprises a recess adapted for receiving at least one microelectronic device.
16. A microelectronic element connected to the substrate of claim 1, wherein the element is a fingerprint scanner.
17. A microelectronic element connected to the substrate of claim 1, wherein the element is an image sensor.
18. A microelectronic element connected to the substrate of claim 1, wherein the element is an RF package.
19. A microelectronic assembly, comprising:
a substrate including:
(a) a dielectric structure having first and second regions, said dielectric structure bearing contact elements in said first region and bearing unitary traces extending between said first and second regions, at least some of said traces being connected to at least some of the contact elements; and
(b) a first dielectric encapsulant disposed on said structure in said first region, said first dielectric encapsulant being disposed so said contact elements are exposed at a surface of the first dielectric encapsulant in said first region; and
at least one microelectronic device which terminals are selectively connected to said contact elements using a ball bonding technique or a wire bonding technique.
20. The assembly as claimed in claim 19 wherein said first dielectric encapsulant reinforces said structure in said first region so that said first region is more rigid than said second region.
21. The assembly as claimed in claim 19 wherein at least a portion of the first dielectric encapsulant forms a wall projecting from the structure and surrounding at least some of the at least one microelectronic device.
22. The assembly as claimed in claim 21 wherein the substrate in the first region further comprises an optical component affixed to the wall.
23. The assembly as claimed in claim 21 wherein the substrate further comprises a recess receiving the at least one microelectronic device.