1-11. (canceled)
12. A vehicle tyre having an inner face and a main axis, the tyre comprising:
a rubber mass having a joining zone in a circumferential direction on the inner face of the tyre; and
a radiofrequency transponder positioned to form an angle (\u03b8) with the joining zone about the main axis of the tyre, with the angle (\u03b8) being greater than or equal to 90\xb0.
13. The vehicle tyre according to claim 12, wherein the angle (\u03b8) is greater than or equal to 135\xb0.
14. The vehicle tyre according to claim 12, wherein the angle (\u03b8) is greater than 150\xb0.
15. The vehicle tyre according to claim 12, wherein the angle (\u03b8) is equal to 180\xb0.
16. The vehicle tyre according to claim 12, wherein the radiofrequency transponder is in contact with a sidewall of the tyre supporting a DOT code and inscriptions giving information on the tyre.
17. The vehicle tyre according to claim 12, wherein the tyre is part of a set of several tyres, and wherein the tyre and another tyre of the set conform to claim 12.
18. A vehicle comprising at least two tyres,
wherein each tyre of the at least two tyres has an inner face and a main axis, and
wherein each tyre of the at least two tyres includes:
a rubber mass having a joining zone in a circumferential direction on the inner face of the tyre, and
a radiofrequency transponder positioned to form an angle (\u03b8) with the joining zone about the main axis of the tyre, with the angle (\u03b8) being greater than or equal to 90\xb0.
19. A raw vehicle-tyre preform having an inner face and a main axis, the preform comprising:
a rubber mass having a joining zone in a circumferential direction on the inner face of the preform, and
a radiofrequency transponder positioned to form an angle (\u03b8) with the joining zone about the main axis of the preform, with the angle (\u03b8) being greater than or equal to 90\xb0.
20. The raw vehicle-tyre preform according to claim 19, wherein the preform is part of a set of several preforms, and wherein the preform and another preform of the set conform to claim 19.
21. A method for manufacturing a raw vehicle-tyre preform having an inner face and a main axis, the method comprising:
placing a radiofrequency transponder on a rubber mass having a joining zone in a circumferential direction on the inner face of the preform, the transponder being positioned to form an angle (\u03b8) with the joining zone about the main axis of the preform, with the angle (\u03b8) being greater than or equal to 90\xb0.
22. The method according to claim 21, wherein the method is performed consecutively on several raw vehicle-tyre preforms.
23. A method for manufacturing a vehicle tyre having an inner face and a main axis, the method comprising:
placing a radiofrequency transponder on a rubber mass having a joining zone in a circumferential direction on the inner face of the tyre, the transponder being positioned to form an angle (\u03b8) with the joining zone about the main axis of the tyre, with the angle (\u03b8) being greater than or equal to 90\xb0.
24. The method according to claim 23, wherein the method is performed consecutively on several vehicle tyres.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a light emitting device comprising:
a light emitting device wafer fabricating step of fabricating a light emitting device wafer having a light emitting layer section based on a double heterostructure in which a first-conductivity-type cladding layer, an active layer and an second-conductivity-type cladding layer, each of which being composed of a compound having a composition allowing lattice matching with GaAs, out of compound expressed by formula (AlxGa1-x)yIn1-yP (where, 0\u2266x\u22661, 0\u2266y\u22661), are stacked in this order, and a GaP light extraction layer disposed, having a main surface, on a side not faced to the active layer, of the first-conductivity-type cladding layer of the light emitting layer section as a first main surface, so that on the first main surface of the light emitting layer section a {100} surface appears on the first main surface of itself;
a surface roughening step of forming surface roughening projections by etching the first main surface of the GaP light extraction layer, using an etching solution for surface roughening; and
a dicing step of dicing the light emitting device wafer to light emitting device chips, wherein
on the light emitting device wafer fabricating step, the GaP light extraction layer is formed to have a principal crystal axis thereof off-angled in a degree range of 1\xb0 to 25\xb0, both ends inclusive, from <100> direction, so as that a P-rich off-angled {100} surface, having a higher existence rate of P atoms than an exact {100} surface, appears on the first main surface thereof,
the etching solution for surface roughening at the surface roughening step contains:
acetic acid (on CH3COOH basis): 40% by mass or more and 75% by mass or less;
hydrofluoric acid (on HF basis): 2% by mass or more and 8% by mass or less;
nitric acid (on HNO3 basis): 4.5% by mass or more and 16% by mass or less; and
iodine (on I2 basis) : 0.6% by mass or more and 1.5% by mass or less,
and has a water content of 2% by mass or more and 25% by mass or less.
2. The method of fabricating the light emitting device as claimed in claim 1, wherein
the first-conductivity-type cladding layer and the GaP light extraction layer are both formed as n-type semiconductor layers.
3. The method of fabricating a light emitting device as claimed in claim 1, wherein
the surface roughening etching solution has a mass composition ratio of (acetic acid(hydrofluoric acid+nitric acid)) set to 2 to 10, both ends inclusive.
4. The method of fabricating a light emitting device as claimed claim 1, wherein
the surface roughening etching solution has a mass composition ratio of (hydrofluoric acidacetic acid) set to 0.03 to 0.13, both ends inclusive.
5. The method of fabricating a light emitting device as claimed in claim 1, wherein
a degree of the off-angle ranges from 10\xb0 to 25\xb0, both ends inclusive.
6. The method of fabricating a light emitting device as claimed in claim 1, wherein
the light emitting device wafer fabricating step includes a light-extraction-side electrode forming step of covering a part of the first main surface of the GaP light extraction layer with a light-extraction-side electrode mainly composed of Au,
having an area not covered with the light-extraction-side electrode of the first main surface as a main light extraction area,
on the surface roughening step, the surface roughening projections are formed on the main light extraction area by contacting the main light extraction area as well as the light-extraction-side electrode with the etching solution for surface roughening.
7. The method of fabricating a light emitting device as claimed in claim 1, wherein
the surface roughening step is conducted after the dicing step, and the etching solution for surface roughening contacts the first main surface as well as side faces of the GaP light extraction layer, so as to form the surface roughening projections on the side faces.
8. The method of fabricating a light emitting device as claimed in claim 7, wherein
the dicing step is conducted so as to have {100} surface appearing on the side face of the GaP light extraction layer of the light emitting device chip.