1. A three-dimensional air-adsorbing structure that has a volume, comprising:
(i) a three-dimensional, unitary, skeletal, porous scaffold;
(ii) air-adsorbing material particles; and
(iii) one or more hydrophobic binders that couple air-adsorbing material particles to each other to form agglomerates and couples particles and agglomerates to the scaffold;
wherein the structure has structure openings in the agglomerates and structure openings between agglomerates, such structure openings being open to the outside environment;
wherein the cumulative volume of the structure openings that have an apparent diameter larger than about 5 microns as measured by mercury porosimetry is greater than 0.2 mlg of the air-adsorbing structure.
2. The three-dimensional air-adsorbing structure of claim 1 wherein the air-adsorbing material and the agglomerates are coupled to the scaffold by creating a water-based emulsion of air-adsorbing material, agglomerates of the material, and binder, and then impregnating the scaffold with this emulsion.
3. The three-dimensional air-adsorbing structure of claim 1 wherein the cumulative volume of the structure openings that have an apparent diameter larger than about 0.01 microns as measured by mercury porosimetry is greater than 0.6 mlg of the air-adsorbing structure.
4. The three-dimensional air-adsorbing structure of claim 1 wherein the scaffold comprises an open-cell foam or an electrospun fibrous material.
5. The three-dimensional air-adsorbing structure of claim 4 wherein the open-cell foam has more than about 50 cells per inch and less than about 500 cells per inch.
6. The three-dimensional air-adsorbing structure of claim 1 wherein the scaffold openings make up at least about 90% of the volume of the scaffold.
7. The three-dimensional air-adsorbing structure of claim 1 wherein the scaffold comprises melamine foam or polyurethane foam.
8. The three-dimensional air-adsorbing structure of claim 1 wherein the air-adsorbing material comprises a silicon-based zeolite material.
9. The three-dimensional air-adsorbing structure of claim 1 where the acidity of the air-adsorbing structure, as determined by mixing one part by weight of the structure with five parts by weight of water and measuring the resulting pH, is such that the pH is greater than 4.
10. A three-dimensional air-adsorbing structure that has a volume, comprising:
(i) a three-dimensional, unitary, skeletal, porous scaffold having scaffold openings distributed within its volume, where the scaffold openings make up at least about 90% of the volume of the scaffold;
(ii) air-adsorbing material particles; and
(iii) one or more hydrophobic binders that couple air-adsorbing material particles to each other to form agglomerates and couples particles and agglomerates to the scaffold;
wherein the structure has structure openings in the agglomerates and structure openings between agglomerates, such structure openings being open to the outside environment;
wherein the structure further comprises closed volumes that are not open to the outside environment, and wherein the surface area of the structure openings plus the surface area of closed volumes, as measured by CT scanning with a resolution of at least 5 microns, is at least about 3 mm2mm3 of air-adsorbing structure.
11. The three-dimensional air-adsorbing structure of claim 10 wherein the cumulative volume of the structure openings that have an apparent diameter larger than about 5 microns as measured by mercury porosimetry is greater than 0.2 mlg of the air-adsorbing structure.
12. The three-dimensional air-adsorbing structure of claim 11 wherein the cumulative volume of the structure openings that have an apparent diameter larger than about 0.01 microns as measured by mercury porosimetry is greater than 0.6 mlg of the air-adsorbing structure.
13. The three-dimensional air-adsorbing structure of claim 10 wherein the volume of the structure openings is greater than the volume of the closed volumes.
14. The three-dimensional air-adsorbing structure of claim 10 wherein the scaffold comprises an open-cell foam or an electrospun fibrous material.
15. The three-dimensional air-adsorbing structure of claim 14 wherein the open-cell foam has more than about 50 cells per inch and less than about 500 cells per inch.
16. The three-dimensional air-adsorbing structure of claim 10 wherein the scaffold openings make up at least about 90% of the volume of the scaffold.
17. The three-dimensional air-adsorbing structure of claim 10 wherein the scaffold comprises melamine foam or polyurethane foam.
18. The three-dimensional air-adsorbing structure of claim 10 wherein the air-adsorbing material and the agglomerates are coupled to the scaffold by creating a water-based emulsion of air-adsorbing material, agglomerates of the material, and binder, and then impregnating the scaffold with this emulsion.
19. The three-dimensional air-adsorbing structure of claim 18 wherein the binder comprises an acrylic material or a polyurethane material or a polyacrylate material.
20. The three-dimensional air-adsorbing structure of claim 10 wherein the air-adsorbing material comprises a silicon-based zeolite material.
21. The three-dimensional air-adsorbing structure of claim 10 where the acidity of the air-adsorbing structure, as determined by mixing one part by weight of the structure with five parts by weight of water and measuring the resulting pH, is such that the pH is greater than 4.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A structure, comprising:
(a) a substrate which includes a top substrate surface which defines a reference direction perpendicular to the top substrate surface;
(b) N semiconductor regions on the substrate, N being a positive integer,
wherein the N semiconductor regions comprise dopants;
(c) P semiconductor regions on the substrate, P being a positive integer,
wherein the P semiconductor regions do not comprise dopants; and
(d) M interconnect layers on top of the substrate, the N semiconductor regions, and the P semiconductor regions, M being a positive integer,
wherein the M interconnect layers include an inductor,
wherein all of the N semiconductor regions in the reference direction do not overlap the inductor,
wherein all of the P semiconductor regions in the reference direction overlap the inductor, and
wherein a plane perpendicular to the reference direction and intersecting a semiconductor region of the N semiconductor regions intersects a semiconductor region of the P semiconductor regions.
2. The structure of claim 1,
wherein each semiconductor region of the P semiconductor regions is not in direct physical contact with any silicide region, and
wherein each semiconductor region of the N semiconductor regions is in direct physical contact with a silicide region.
3. The structure of claim 1,
wherein the N semiconductor regions comprise N1 semiconductor regions and N2 semiconductor regions, N1 and N2 being positive integers,
wherein N1 plus N2 is equal to N,
wherein the N1 semiconductor regions of the N semiconductor regions comprise p-type dopants, and
wherein the N2 semiconductor regions of the N semiconductor regions comprise n-type dopants.
4. The structure of claim 1, further comprising Q semiconductor regions on the substrate, Q being a positive integer,
wherein the Q semiconductor regions do not comprise dopants, and
wherein the Q semiconductor regions do not overlap the inductor in the reference direction.
5. The structure of claim 1, wherein said inductor resides in a single interconnect layer of the M interconnect layers.
6. The structure of claim 1, wherein said inductor resides in multiple interconnect layers of the M interconnect layers.
7. A structure, comprising:
(a) a substrate which includes a top substrate surface which defines a reference direction perpendicular to the top substrate surface;
(b) N semiconductor regions on the substrate, N being a positive integer,
wherein each semiconductor region of the N semiconductor regions is in direct physical contact with a silicide region;
(c) P semiconductor regions on top of the substrate, P being a positive integer,
wherein each semiconductor region of the P semiconductor regions is not in direct physical contact with any silicide region; and
(d) M interconnect layers on top of the substrate, the N semiconductor regions, and the P semiconductor regions, M being a positive integer,
wherein the M interconnect layers include an inductor,
wherein all of the N semiconductor regions in the reference direction do not overlap the inductor,
wherein each semiconductor region of the P semiconductor regions overlaps the inductor in the reference direction, and
wherein a plane perpendicular to the reference direction and intersecting a semiconductor region of the N semiconductor regions intersects a semiconductor region of the P semiconductor regions.
8. The structure of claim 7,
wherein each semiconductor region of the P semiconductor regions does not comprise dopants,
wherein each semiconductor region of the N semiconductor regions comprises dopants,
wherein the N semiconductor regions comprise N1 semiconductor regions and N2 semiconductor regions, N1 and N2 being positive integers,
wherein N1 plus N2 is equal to N,
wherein the N1 semiconductor regions of the N semiconductor regions comprise p-type dopants, and
wherein the N2 semiconductor regions of the N semiconductor regions comprise n-type dopants.
9. The structure of claim 7, further comprising Q semiconductor regions on the substrate, Q being a positive integer,
wherein each semiconductor region of the Q semiconductor regions is not in direct physical contact with any silicide region, and
wherein the Q semiconductor regions do not overlap the inductor in the reference direction.
10. The structure of claim 7, wherein said inductor resides in a single interconnect layer of the M interconnect layers.
11. The structure of claim 7, wherein said inductor resides in multiple interconnect layers of the M interconnect layers.