1. A data card reader, comprising:
a card receiving assembly for receiving a data card;
an electrical connector for electrically coupling the data card to the circuit boat; and
a support assembly for mounting the card receiving assembly to a circuit board, the support assembly including at least one post far extending between the card receiving assembly and the circuit board for supporting the card receiving assembly, the at least one post including a first standoff cost and a second standoftpost, the second standoff post being widened with respect to the first standoff post for strengthenint the mounting of the card receiving assembly near the electrical connector to absorb stresses caused by insertion and removal of a data card in the card receiving assembly,
wherein the support assembly spaces the card receiving assembly away from the circuit board for allowing a component to be mounted to the circuit board beneath the card receiving assembly.
2. The data card reader as claimed in claim 1, further comprising a ground for grounding the data card reader.
3. The data card reader as claimed in claim 2, wherein the ground comprises a spring contact extending from the card receiving assembly to the circuit board.
4. The data card reader as claimed in claim 1, further comprising a shield far shielding the data card received in the card receiving assembly from components mounted to the circuit board beneath the card receiving assembly.
5. The data card reader as claimed in claim 4, further comprising a ground for grounding the card receiving assembly to the shield.
6. The data card reader as claimed in claim 5, wherein the ground comprises a spring contact extending from the card receiving assembly to the shield.
7. The data card reader as claimed in claim 1, further comprising a holder for holding a data card received in the card receiving assembly.
8. The data card reader as claimed in claim 1, wherein the data card comprises one of a SIM card and an UIM card.
9. A circuit board assembly, comprising:
a circuit board; and
a data card reader mounted to the circuit board, the data card reader including a card receiving assembly for receiving a data card, an electrical connector for electrically coupling the data card to the circuit board, and a support assembly including at least one post extending between the card receiving assembly and the circuit board for mounting the card receiving assembly to the circuit board, the at least one post including a first standoff post and a second standoff post, the second standoff post being widened with respect to the first standoff post for strengthening the mounting of the card receiving assembly near the electrical connector to absorb stresses caused by insertion and removal of a data card in the card receiving assembly,
wherein the support assembly spaces the card receiving assembly away from the circuit board for allowing a component to be mounted to the circuit board beneath the card receiving assembly.
10. The circuit board assembly as claimed in claim 9, wherein the data card reader further includes a ground for grounding the data card reader.
11. The circuit board assembly as claimed in claim 10, wherein the ground comprises a spring contact extending from the card receiving assembly to the circuit board.
12. The circuit board assembly as claimed in claim 9, further comprising a shield for shielding the data card received in the card receiving assembly from a component mounted to the circuit board beneath the card receiving assembly.
13. The circuit board assembly as claimed in claim 12, wherein the data card reader further includes a ground for grounding the card receiving assembly to the shield.
14. The circuit board assembly as claimed in claim 13, wherein the ground comprises a spring contact extending from the card receiving assembly to the shield.
15. The circuit board assembly as claimed in claim 9, further comprising a holder for holding a data card received in the card receiving assembly.
16. The circuit board assembly as claimed as claim 9, wherein the data card comprises one of a SIM card and an UIM card.
17. A mobile telephone, comprising:
a circuit board; and
a data card reader mounted to the circuit board, the data card reader including a card receiving assembly for receiving a data card, an electrical connector for electrically coupling the data card to the circuit board, and a post assembly for coupling the card receiving assembly to the circuit board, the post assembly including a first standoff post and a second standoff post, the second standoff post being widened with respect to the first standoff post for strengthening the mounting of the card receiving assembly near the electrical connector to absorb stresses caused by insertion and removal of a data card in the card receiving assembly,
wherein the post assembly spaces the card receiving assembly away from the circuit board for allowing a component to be mounted to the circuit board beneath the card receiving assembly.
18. The mobile telephone as claimed in claim 17, wherein the data card reader further includes a pound for grounding the data card reader.
19. The mobile telephone as claimed in claim 18, wherein the ground comprises a spring contact extending from the card receiving assembly to the circuit board.
20. The mobile telephone as claimed in claim 17, further comprising a shield for shielding the data card received in the card receiving assembly from components mounted to the circuit board beneath the card receiving assembly.
21. The mobile telephone as claimed in claim 20, wherein the data card reader further includes a ground for grounding the card receiving assembly to the shield.
22. The mobile telephone as claimed in claim 21, wherein the pound comprices a spring contact extending from the card receiving assembly to the shield.
23. The mobile telephone as claimed in claim 17, wherein the support assembly comprises at least one post extending between the card receiving assembly and the circuit board.
24. The mobile telephone as claimed in claim 17, further comprising a holder for holding a data card received in the card receiving assembly.
25. The mobile telephone as claimed as claim 17, wherein the data card comprises one of a SIM card and an UIM card.
26. A data card reader, comprising:
means for receiving a data card;
means for electrically coupling the data card to the circuit board; and
means for mounting the data card receiving means to a circuit board, the mounting means including at least one post for extending between the card receiving assembly and the circuit board for supporting the card receiving assembly, the at least one post including a first standoff post and a second standoff post, the second standoff post beina widened with respect to the first standoff post for strengthening the mounting of the card receiving assembly near the electrical connector to absorb stresses caused by insertion and removal of a data card in the card receiving assembly,
wherein the mounting means spaces the data card receiving means away from the circuit board for allowing a component to be mounted to the circuit board beneath the data card receiving means.
27. The data card reader as claimed in claim 26, further comprising means for shielding the data card from components mounted to the circuit board beneath the data card receiving means.
28. The data card reader as claimed in claim 26, further comprising means for grounding the data card to the circuit board.
29. The data card reader as claimed in claim 26, further comprising means for holding the data card received in the data card receiving means.
30. The data card reader as claimed as claim 26, wherein the data card comprises one of a SIM card and an UIM card.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer, the method comprising:
forming a first nitride layer on a substrate;
forming a second nitride layer on the first nitride layer;
forming a field oxide layer on the second nitride layer;
forming a gate insulating film in which an Al2O3 film is formed to penetrate the field oxide layer, the first nitride layer, and the second nitride layer, the Al2O3 film is subject to radical oxidation, and
then a SiO2 film is formed by using microwave plasma, the SiO2 film penetrating the field oxide layer and the second nitride layer only, and the SiO2 film located between the Al2O3 film and a gate electrode, wherein
the gate electrode is at least partially located in an opening of the SiO2 film of the gate insulating film, and
in the forming the gate insulating film, the microwave plasma is generated by using microwaves at a frequency of 2.45 GHz by using a radial line slot antenna.
2. The method for fabricating the semiconductor device according to claim 1, wherein the forming the gate insulating film includes a plasma-enhanced CVD process using microwave plasma.
3. The method for fabricating the semiconductor device according to claim 1, wherein the forming the gate insulating film includes a plasma-enhanced ALD process using microwave plasma.
4. The method for fabricating the semiconductor device according to claim 1, wherein the forming the gate insulating film includes forming a film in which the SiO2 film and the Al2O3 film are stacked.
5. The method for fabricating the semiconductor device according to claim 4, wherein the forming the gate insulating film includes forming the Al2O3 film by a thermal ALD process and forming the SiO2 film by a plasma-enhanced CVD process.
6. The method for fabricating the semiconductor device according to claim 1, wherein the forming the gate insulating film includes forming the SiO2 film to form the gate insulating film and includes forming the SiO2 film by both plasma-enhanced CVD and plasma-enhanced ALD processes.
7. The method for fabricating the semiconductor device according to claim 1, wherein the forming the gate insulating film includes introducing gas containing nitrogen oxides (NOx) for processing.
8. The method for fabricating the semiconductor device according to claim 1, wherein the plasma-enhanced ALD process includes introducing deposition gas containing BTBAS (bis-tertiaryl-buthyl-amino-silane) onto the nitride layer.
9. The method for fabricating the semiconductor device according to claim 1, wherein the forming the gate insulating film includes successively performing the plasma-enhanced ALD and plasma-enhanced CVD processes.
10. The method for fabricating the semiconductor device according to claim 1, wherein the first nitride layer and the second nitride layer have a heterojunction.
11. The method for fabricating the semiconductor device according to claim 10, wherein the forming the first nitride layer and the second nitride layer includes forming a nitride layer composed of at least one of a GaN layer and an AlGaN (aluminum gallium nitride) layer.