1. A method for manufacturing a light emitting device of a light-emitting device (LED), comprising:
(a) forming a buffer layer over an upper side of a substrate, wherein said substrate comprises sapphire, silicon carbide (SiC) and gallium nitride (GaN);
(b) forming an n-GaN based epitaxial layer over said buffer layer;
(c) forming an MQW layer over said n-GaN based epitaxial layer, wherein said MQW active layer comprises a material so that said MQW active layer emits a light with a wavelength comprising 380 nm to 600 nm in response to an applied electric power on said light-emitting structure;
(d) forming a p-type distributed Brag reflector (DBR) over said MQW active layer;
(e) forming a p-GaN based layer over said p-type DBR, etching away a portion of said n-GaN based layer, said MQW active layer, said p-type DBR and said p-GaN based layer whereby said n-GaN based layer has an exposing region and disposing an n-type electrode over said exposing region and a p-type electrode over said remaining p-GaN based layer after said etching; and
(f) coating a metal reflector over a bottom side of said substrate.
2. The method as in claim 1, wherein a step of (e\u2032) is added in said step (e) after said forming and prior to said disposition of said n-type and said p-type electrodes, said step (e\u2032) is forming a transparent contact layer (TCL) having an exposing side, wherein said TCL comprises NiAu and other transparent and conductive layers with a suitable thickness and being transmittable with a light having a wavelength ranging from 380 nm to 600 nm.
3. The method as in claim 2, wherein said p-type DBR comprises AlGaNGaN.
4. A method for manufacturing a light-emitting structure of a light-emitting device (LED), which comprises the steps of:
(a) forming a buffer layer over an upper side of a substrate wherein said substrate comprises sapphire, silicon carbide (SiC), silicon (Si) and gallium nitride (GaN);
(b) forming an n-type DBR on said buffer layer;
(c) forming an n-GaN based layer over said n-type DBR;
(d) forming an MQW active layer over said n-GaN based layer, wherein said MQW active layer comprises a material so that said MQW active layer emits a light with a wavelength of 380\u2013600 nm upon an applied electric power;
(e) forming a p-type distributed Brag reflector (DBR) over said MQW active layer; and
(f) forming a p-GaN based layer over said p-type DBR and etching away a portion of said p-GaN based layer, said p-type DBR, said MQW active layer and said n-GaN based layer whereby said n-GaN based layer has an exposing region and disposing an-type electrode over said exposing region of said n-GaN based layer and disposing a p-type electrode over said p-GaN based layer,
wherein the light-emitting structure between the n-type DBR and the p-type DBR includes the n-GaN based layer formed directly on the n-type DBR, the MQW active layer formed directly on the n-GaN based layer, and the D-type DBR forming the formed directly on the MQW active layer.
5. The method according to claim 4, wherein a step of (f\u2032) is added in said step (f) after the forming and prior to the disposition of said n-type and said p-type electrodes, said step (f\u2032) is forming a transparent contact layer (TCL) with a suitable thickness and being transparent to a light with a wavelength of 380\u2013600 nm over said etched p-GaN layer, wherein said TCL having an exposing side.
6. The method according to claim 4, wherein said n-type DBR has a reflectance of greater than 90% and said p-type DBR has a reflectance of 50\u201380%.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of inputting light into a core layer of a multimode optical waveguide,
the optical waveguide including:
an under-cladding layer; and
the core layer formed so that at least a part of the core layer is adjacent to the under-cladding layer,
the method comprising inputting the light into the core layer so that:
a spot of the light at an input port-side end surface of the multimode optical waveguide completely includes an input port of the core layer;
a spot area of the light at the input port-side end surface of the multimode optical waveguide is twice or more of an area of the input port of the core layer; and
an angle of input range of the light at an input port end surface of the core layer is from 10\xb0 to 30\xb0.
2. The method according to claim 1, wherein a spot diameter of the light at the input port-side end surface of the multimode optical waveguide is 100 \u03bcm or more.
3. An SPR sensor measurement method, comprising inputting light into the core layer of an SPR sensor cell through use of the method of claim 1,
the SPR sensor cell including:
the multimode optical waveguide including:
the under-cladding layer; and
the core layer formed so that at least a part of the core layer is adjacent to the under-cladding layer; and
a metal layer covering the core layer.
4. An SPR sensor, comprising:
an SPR sensor cell including:
a multimode optical waveguide including:
an under-cladding layer; and
a core layer formed so that at least a part of the core layer is adjacent to the under-cladding layer; and
a metal layer covering the core layer; and
a light source,
the light source being arranged so that, at an input port-side end surface of the multimode optical waveguide, light output from the light source forms a spot that completely includes an input port of the core layer and has an area that is twice or more of an area of the input port of the core layer, and so that the light is input into an input port end surface of the core layer in an angle of input range from 10\xb0 to 30\xb0.
5. An SPR sensor, comprising:
an SPR sensor cell including:
a multimode optical waveguide including:
an under-cladding layer; and
a core layer formed so that at least a part of the core layer is adjacent to the under-cladding layer; and
a metal layer covering the core layer;
a light source; and
an optical component for causing light output from the light source to form, at an input port-side end surface of the multimode optical waveguide, a spot that completely includes an input port of the core layer and has an area that is twice or more of an area of the input port of the core layer, and inputting the light into an input port end surface of the core layer in an angle of input range from 10\xb0 to 30\xb0.