1. A method of providing a user interface to a user, comprising:
displaying a plurality of display areas on a screen, wherein each display area displays at least one control subject;
positioning a pointing object onto one of the control subjects, and
moving the pointing object between the display areas when a move command is input.
2. The method of claim 1, further comprising performing a control operation on the control subject located in the display area where the pointing object is positioned by inputting a control signal.
3. The method of claim 1, wherein the control subject comprises a menu which controls a portable broadcast-receiving device.
4. The method of claim 3, wherein the control subject further comprises a sub-menu which controls a display area.
5. The method of claim 1, wherein the control subject comprises at least one of video, audio, and data broadcasts.
6. The method of claim 1, wherein the pointing object comprises an icon representing a two-dimensional figure.
7. The method of claim 1, wherein the pointing object comprises an icon representing a three-dimensional figure.
8. The method of claim 1, wherein at least one of the pointing object’s shape, form, color, and brightness changes over time andor when the pointing object is moved.
9. An apparatus which provides a user interface, comprising:
a display control module, comprising:
a plurality of display areas which display control subjects, wherein each display area displays at least one control subject, and
a pointing object control module which moves a pointing object displayed on one display area to another display area when a move command is input.
10. The apparatus of claim 9, further comprising a function control module which performs a control operation on a control subject on which the pointing object is located when a control signal is input.
11. The apparatus of claim 8, wherein the control subject comprises a menu which controls a portable broadcast-receiving device.
12. The apparatus of claim 11, wherein the control subject further comprises a sub-menu which controls a display area.
13. The apparatus of claim 9, wherein the control subject comprises at least one of video, audio, and data broadcasts.
14. The apparatus of claim 9, wherein the pointing object comprises an icon which represents a two-dimensional figure.
15. The apparatus of claim 9, wherein the pointing object comprises an icon which represents a three-dimensional figure.
16. The apparatus of claim 9, wherein at least one of the pointing object’s shape, form, color, and brightness changes over time andor when the pointing object is moved.
17. A method of providing a user interface to a user, comprising:
receiving a plurality of digital broadcasts with a portable broadcast receiving device;
displaying the plurality of digital broadcasts in a corresponding plurality of display areas displayed on a screen of the portable broadcast receiving device; and
using a pointing object control module to move a pointing object between the display areas to select different digital broadcasts.
18. The method of claim 17, further comprising entering a command onto the display area which the pointing object is located on by pressing a function button located on the portable broadcast-receiving device.
19. The method of claim 18, wherein the entering of the command enlarges the display area.
20. The method of claim 17, wherein the plurality of digital broadcasts comprises at least one of digital video, digital audio, and digital data broadcasts.
21. The method of claim 17, wherein the pointing object comprises an icon which represents a two-dimensional icon.
22. The method of claim 17, wherein the pointing object comprises an icon which represents a three-dimensional icon.
23. The method of claim 17, wherein at least one of the pointing object’s shape, form, color, and brightness changes over time andor when the pointing object is moved.
24. An apparatus which provides a user interface, comprising:
a portable broadcast receiving device which receives a digital broadcast, comprising:
a display panel which displays the digital broadcast in a display area, and
a pointing object control module, wherein a movement of the pointing object control module causes a corresponding movement of a pointing object which allows a user to navigate the pointing object around the display area.
25. The apparatus of claim 24, further comprising a function control module which performs a control operation on the display area on which the pointing object is located when a control signal is input.
26. The apparatus of claim 25, wherein the display area displays a menu which controls the portable broadcast-receiving device.
27. The apparatus of claim 26, wherein the menu displays a sub-menu when the pointing object is moved onto the menu by the user.
28. The apparatus of claim 24, wherein the display area displays at least one of video, audio, and data broadcasts.
29. The apparatus of claim 24, wherein the pointing object comprises an icon which represents a two-dimensional figure.
30. The apparatus of claim 24, wherein the pointing object comprises an icon which represents a three-dimensional figure.
31. The apparatus of claim 24, wherein at least one of the pointing object’s shape, form, color, and brightness changes over time andor when the pointing object is moved.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for producing a bonded silicon wafer comprising a step of implanting oxygen ions from one-side face of a silicon wafer for active layer with a substrate oxygen concentration of 10\xd71017cm3 to 18\xd71017cm3 (old ASTM conversion) sliced so as to have such a wafer face that an inclination angle \u03b8 (compound angle) with respect to a face perpendicular to <100> orientation or <110> orientation of a silicon single crystal ingot is 0\xb0<\u03b8\u22660.15\xb0 to form an oxygen ion implanted layer at a given depth position from the one-side face of the silicon wafer for active layer;
a step of bonding the one-side face of the silicon wafer for active layer to one-side face of a silicon wafer for support to form a silicon wafer composite;
a first heat treatment step of heat-treating the silicon wafer composite to strengthen the bonding and to convert the oxygen ion implanted layer into an inner SiO2 layer;
a step of exposing the inner SiO2 layer from other face of the silicon wafer for active layer in the silicon wafer composite;
a step of removing the inner SiO2 layer; and
a planarizing step of polishing a surface of the silicon wafer composite after the removal of the inner SiO2 layer or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step) to improve a flatness of the silicon wafer composite.
2. A method for producing a bonded silicon wafer according to claim 1, wherein the silicon wafer for active layer is a p-type silicon wafer.
3. A method for producing a bonded silicon wafer according to claim 2, wherein the p-type silicon wafer contains boron as an electrically conductive component.
4. A method for producing a bonded silicon wafer according to claim 1, wherein the given depth position of the oxygen ion implantation is a depth position of 300 to 600 nm from the one-side face of the silicon wafer for active layer.
5. A method for producing a bonded silicon wafer according to claim 1, wherein the silicon wafer composite is formed by indirectly bonding the one-side face of the silicon wafer for active layer to the silicon wafer for support through an insulating layer previously formed on the one-side face of the silicon wafer for support.
6. A method for producing a bonded silicon wafer according to claim 1, wherein the silicon wafer composite is formed by directly bonding the one-side face of the silicon wafer for active layer to the silicon wafer for support without an insulating layer.
7. A method for producing a bonded silicon wafer according to claim 1, wherein the first heat treatment step is conducted within a temperature region of 1000 to 1300\xb0 C.
8. A method for producing a bonded silicon wafer according to claim 1, wherein the second heat treatment step is conducted within a temperature region of 1000 to 1200\xb0 C.