1. A semiconductor device including a film substrate, an interposer substrate made of silicon and mounted on the film substrate, and a semiconductor element mounted on the interposer substrate in order to drive the display elements, wherein the interposer substrate includes a plurality of substrate projecting electrodes formed on one surface thereof facing the semiconductor element, the semiconductor element includes a plurality of element projecting electrodes configured to be joined to the substrate projecting electrodes correspondingly, wherein:
the plurality of element projecting electrodes is disposed throughout a surface of the semiconductor element.
2. The semiconductor device according to claim 1, wherein the plurality of element projecting electrodes is disposed in staggered configuration.
3. The semiconductor device according to claim 1, wherein the plurality of element projecting electrodes is disposed in linear symmetry.
4. The semiconductor device according to claim 1, wherein the plurality of element projecting electrodes is disposed so that the number of the element projecting electrodes jointed with the substrate projecting electrodes is reduced when the substrate and the semiconductor element are joined with one of them rotated 180 degrees.
5. The semiconductor device according to claim 1, comprising:
element dummy bumps outside of where the plurality of element projecting electrodes is provided, the element dummy bumps protecting junctions between the element projecting electrodes and the substrate projecting electrodes; and
substrate dummy bumps outside of where the plurality of substrate projecting electrodes is provided, the substrate dummy bumps being configured to be joined to the element dummy bumps correspondingly.
6. The semiconductor device according to claim 1, comprising:
inner-side element dummy bumps inside of where the plurality of element projecting electrodes is provided, the inner-side element dummy bumps protecting junctions between the element projecting electrodes and the substrate projecting electrodes; and
inner-side substrate dummy bumps inside of where the plurality of substrate projecting electrodes is provided, the inner-side substrate dummy bumps being configured to be joined to the inner-side element dummy bumps.
7. The semiconductor device according to claim 1, comprising:
element dummy bumps respectively on outside and inside of where the plurality of element projecting electrodes is provided, the element dummy bumps protecting junctions between the element projecting electrodes and the substrate projecting electrodes; and
a wiring pattern for electrically connecting an element dummy bump provided outside and an element dummy bump provided inside.
8. The semiconductor device according to claim 1, comprising:
an unmounted projecting electrode on the semiconductor element, the unmounted projecting electrode having a gap with the interposer substrate.
9. The semiconductor device according to claim 1, wherein the unmounted projecting electrode is provided in a part of a region located above a metal wiring pattern formed on the semiconductor element.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of operating an internal combustion engine comprising the steps of:
placing a housing in series relationship respective to fuel flow to said engine so that the fuel flows through the housing;
encapsulating a copper wire alloy mesh within the housing wherein the wire is a mesh weave defined by the number of openings per square inch; and
compacting the copper wire mesh and wherein the compacted wire mesh has a density relative to the volume within the housing of between 0.5 gcc to 7 gcc.
2. The method of claim 1 and further including the step of making said housing cylindrical.
3. The method of claim 1, wherein the compacted wire mesh has a density relative to the volume within the housing of between 1 gcc to 6 gcc.
4. The method of claim 1, wherein the compacted wire mesh has a density relative to the volume within the housing of between 1.5 gcc to 5 gcc.
5. The method of claim 1, wherein the compacted wire mesh has a density relative to the volume within the housing of between 1.5 gcc to 4.5 gcc.
6. The method of claim 1, wherein the housing comprises a cylindrical member fitted with end plugs respectively defining said inlet and outlet ports.
7. The method of claim 6, wherein said end plugs each further comprise a nipple for direct connection to a flexible portion of a fuel line.
8. The method of claim 1, wherein the copper wire comprises a copper alloy.
9. The method of claim 1 wherein the engine is a diesel engine.
10. The method of claim 1 wherein the engine is a gasoline engine.
11. A fuel treatment apparatus for connection in series relationship within a fuel line of an internal combustion engine comprising:
a housing having a inlet end and an outlet end; and
a compacted copper wire alloy mesh residing within the housing wherein the wire is a mesh weave defined by the number of openings per square inch and wherein the compacted wire mesh has a density relative to the volume within the housing of between 0.5 gcc to 7 gcc.
12. The apparatus of claim 11, wherein the housing is cylindrical.
13. The apparatus of claim 12, wherein the cylindrical housing is fitted with end plugs respectively defining said inlet and outlet ports.
14. The apparatus of claim 13, wherein said end plugs each further comprise a nipple for direct connection to a flexible portion of a fuel line.
15. The apparatus of claim 11, wherein the compacted wire mesh has a density relative to the volume within the housing of between 1.0 gcc to 6 gcc.
16. The apparatus of claim 11, wherein the compacted wire mesh has a density relative to the volume within the housing of between 1.5 gcc to 5 gcc.
17. The apparatus of claim 11, wherein the engine is either a gasoline engine or diesel engine.
18. A fuel treatment apparatus for connection in series relationship within a fuel line of an internal combustion engine comprising:
a housing having an inlet end and an outlet end; and
a compacted copper wire alloy mesh residing within the housing wherein the compacted wire mesh has a density relative to the volume within the housing of between about 0.5 gcc to 6 gcc and wherein the copper alloy mesh is a wire mesh weave defined by the number of openings per square inch.