1. A noise reduction baffle for a fuel tank comprising:
a lower carrier; and
an upper sliding part configured to slide relatively to the lower carrier due to compression springs mounted on retainers,
wherein said lower carrier has a hollow foot including two vertical or inclined walls defining an open cavity of elongated shape having a longitudinal axis, said cavity including at least one rib making an angle with the longitudinal axis of the cavity, and
wherein the cavity of the foot of the baffle is configured to receive a flange moulded in the tank wall, and the rib inside the cavity is configured to be fitted in a slit of corresponding shape and size into the flange.
2. The noise reduction baffle according to claim 1, wherein the carrier and the sliding part are made of POM (poly-oxy-methylene).
3. The noise reduction baffle according to claim 1, wherein the springs are mounted on retainers formed respectively on the lower wall of the carrier and extend upwardly therefrom, and on retainers formed on the upper sliding part and which extend downwardly therefrom.
4. The noise reduction baffle according to claim 1, wherein the upper sliding part and the lower carrier are plane plates which both bear two portions in relief having a hollow space in the shape of a half cylinder, the half cylinders of one part facing those of the other part so that they define cavities where the compression springs are inserted, the bottom of each half cylindrical hollow space comprising a retainer for one extremity of a spring.
5. The noise reduction baffle according to claim 1, wherein the upper sliding part slides along one surface of the lower carrier, at least one of these parts comprising a slit where a corresponding pin on the other part can slide.
6. The noise reduction baffle according to claim 1, wherein both lateral sides of the upper sliding part are provided with folded edges which each receive a lateral side of the lower carrier.
7. The noise reduction baffle according to claim 1, wherein the carrier and the upper sliding part are provided with excavations andor ribs.
8. The noise reduction baffle according to claim 1, wherein the upper sliding part comprises a head.
9. A fuel tank equipped with a noise reduction baffle according to claim 1, said tank comprising a molded in flange with a slit, the baffle being secured in the tank with its foot on the flange and with its rib inside the slit of the flange.
10. The noise reduction baffle according to claim 1, wherein said baffle is mainly made of plastic and is equipped with at least one metallic part on its upper sliding part or on its lower carrier.
11. The noise reduction baffle according to claim 10, comprising three metallic parts: two on the lower carrier and one on the upper sliding part.
12. The noise reduction baffle according to claim 1, said baffle comprising several pairs of pinsslits and wherein one pinslit pair is a blocking pair and is equipped with portions in relief which cooperate to block the upper part against the lower carrier by compressing the springs, and with a tab at the pins extremity which eases the connectiondisconnection of the portions in relief to blockunblock the baffle which is in a folded position.
13. The noise reduction baffle according to claim 12, wherein the pin of the blocking pair comprises a free end equipped with a dome or a hook, and wherein said pin can slide into the entire slit which comprises a restriction through which the domed or hooked portion is forced.
14. The noise reduction baffle according to claim 12, wherein the pin of the blocking pair can only slide into the slit once the tab at the pins upper extremity has been and moved perpendicularly to the baffle so as to pass underneath the upper edge of the slit.
15. The noise reduction baffle according to claim 14, wherein the pin of the blocking pair has the shape of an elongated tongue cut into the part of the baffle where it is located while being flush with its surface, said tongue bearing a handle on its extremity, on the side opposed to the one bearing the tab.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a solar cell device, comprising:
depositing a dielectric layer on a substrate;
patterning the dielectric layer to form a mask, thereby forming a pattern of exposed regions of the substrate;
disposing a first amount of a first dopant within the exposed regions of the substrate;
disposing a second amount of a second dopant within the exposed regions of the substrate, the dielectric layer, and the substrate below the dielectric layer after disposing the first dopant within the exposed regions, thereby forming a first doped region and a second doped region within the substrate, wherein the first dopant has a higher atomic mass than the second dopant; and
heating the substrate so that the first dopant diffuses a first depth within the substrate and the second dopant diffuses a second depth within the substrate, wherein the second depth of the second doped region is deeper than the first depth of the first doped region.
2. A method of forming a solar cell device, comprising:
forming a dielectric layer on a surface of a substrate;
removing a portion of the dielectric layer from the surface to expose a portion of the substrate;
disposing a first amount of a first dopant within a region of the substrate which is adjacent to the exposed portion of the substrate;
disposing a second amount of a second dopant within the region of the substrate; and
heating the substrate to cause the first dopant to diffuse a first depth within the substrate and the second dopant to diffuse a second depth within the substrate, wherein the second depth is greater than the first depth.
3. A method of forming a solar cell device, comprising:
positioning a physical mask over a surface of a substrate;
disposing a first dopant into a first region of the substrate through an opening formed in the physical mask;
disposing a second dopant into the region of the substrate through the opening formed in the physical mask; and
heating the substrate to form a second region and a third region, wherein the concentration of the first dopant in the second region is greater than the second dopant concentration, the concentration of the second dopant in the third region is greater than the first dopant concentration, and the second region is closer to the surface of the substrate than the third region.
4. A method of forming a solar cell device, comprising:
depositing a doped dielectric layer on a surface of a substrate, wherein the doped dilectric layer contains a first dopant material;
removing a first region of the doped dielectric layer from the surface to form an opening in the doped dielectric layer and thereby expose a first portion of the substrate;
disposing a second dopant material through the opening in the doped dielectric layer and within the first portion of the substrate which is adjacent to the surface of the substrate;
heating the substrate to cause the first dopant material and the second dopant material to diffuse into the substrate; and
removing a second region of the doped dielectric layer from the substrate to expose a second portion of the substrate.
5. A method of forming a solar cell device, comprising:
depositing a dielectric layer on a substrate;
patterning the dielectric layer to form a mask, thereby forming a pattern of exposed regions of the substrate;
disposing a first amount of a first dopant within the exposed regions of the substrate;
disposing a second amount of a second dopant within the exposed regions of the substrate and the dielectric layer after disposing the first dopant within the exposed regions, thereby forming a first doped region and a second doped region within the substrate, wherein the first dopant has a higher atomic mass than the second dopant; and
heating the substrate so that the first dopant diffuses a first depth within the substrate and the second dopant diffuses a second depth within the substrate, wherein the second depth of the second doped region is deeper than the first depth of the first doped region.
6. The method of claim 1, wherein the first dopant is an opposite doping type than the second dopant.
7. The method of claim 1, wherein the concentration of the first dopant near a surface is greater than about 1\xd71016 atomscm2.
8. The method of claim 1, wherein heating the substrate comprises heating the substrate to a temperature greater than about 800\xb0 C.
9. The method of claim 1, further comprising depositing a layer on a surface of the substrate, wherein the layer comprises a material selected from a group consisting of silicon nitride, silicon carbide, and aluminum oxide.
10. The method of claim 1, wherein the first dopant is arsenic (As) and the second dopant is phosporous (P) or boron (B).
11. The method of claim 1,
wherein the first and second doped regions have a similar profile.
12. The method of claim 1, wherein disposing the first amount of the first dopant or disposing the second amount of the second dopant within the region of the substrate comprises:
providing a gas containing a dopant material into a processing region of a plasma processing chamber;
generating a plasma in the processing region; and
biasing a substrate support to cause ions generated in the plasma to be disposed in the surface of the substrate.
13. The method of claim 11, wherein the first and second depth are deepest at a point below the exposed regions of the substrate.
14. The method of claim 2, wherein
disposing the first amount of the first dopant further comprises delivering the first dopant to the surface of the substrate at a first energy level; and
forming the dielectric layer further comprises forming a dielectric layer having a thickness large enough to substantially prevent the first dopant from being disposed in the surface of the substrate beneath the formed dielectric layer when the first dopant is delivered at the first energy level.
15. The method of claim 2, wherein the first dopant is an opposite doping type than the second dopant.
16. The method of claim 2, wherein the concentration of the first dopant in the exposed portion of the substrate is greater than about 1\xd71016 atomscm2.
17. The method of claim 2, wherein heating the substrate comprises heating the substrate to a temperature greater than about 800\xb0 C.
18. The method of claim 2, further comprising depositing a layer on the surface of the substrate, wherein the layer comprises a material selected from a group consisting of silicon nitride, silicon carbide, and aluminum oxide.
19. The method of claim 2, wherein the first dopant is arsenic (As) and the second dopant is phosporous (P) or boron (B).
20. The method of claim 3, wherein first dopant is an opposite doping type than the second dopant.
21. The method of claim 3, wherein the concentration of the first dopant in the exposed portion of the substrate is greater than about 1\xd71016 atomscm2.
22. The method of claim 3, wherein heating the substrate comprises heating the substrate to a temperature greater than about 800\xb0 C.
23. The method of claim 3, further comprising depositing a layer on the surface of the substrate, wherein the layer comprises a material selected from a group consisting of silicon nitride, silicon carbide, and aluminum oxide.
24. The method of claim 3, wherein the first dopant is arsenic (As) and the second dopant is phosporous (P) or boron (B).
25. The method of claim 4, wherein first dopant is an opposite doping type than the second dopant.
26. The method of claim 4, wherein the concentration of the first dopant in the first region of the substrate is greater than about 1\xd71016 atomscm2.
27. The method of claim 4, wherein heating the substrate comprises heating the substrate to a temperature greater than about 800\xb0 C.
28. The method of claim 4, further comprising depositing a layer on the surface of the substrate, wherein the layer comprises a material selected from a group consisting of silicon nitride, silicon carbide, and aluminum oxide.
29. The method of claim 4, wherein the first dopant is arsenic (As) and the second dopant is phosporous (P) or boron (B).
30. The method of claim 24, further comprising depositing a metal over the exposed first portion and the exposed second portion of the substrate.