1. A system for reducing flow stagnation between substantially adjacent components and enhancing heat distribution of the components comprising:
a first component and a second component, each of the first and second components being generally hollow and having at least two walls adjoining each other in a corner region, each of the at least two walls having an interior surface and an exterior surface, each of the at least two walls including a substantially planar region transitioning into the corner region, each substantially planar region having a wall thickness, wherein the exterior surfaces of the two walls join in the corner region to form an outer edge and the interior surfaces of the two walls join in the corner region to form an inner edge, the distance between the inner edge and the outer edge defining an edge thickness,
wherein, in the corner region, the interior surface of each wall approaches the exterior surface such that the edge thickness is less than or equal to the wall thickness, and
wherein the first and second components are substantially adjacent such that the outer edges are disposed opposite and substantially parallel to each other,
whereby the adjacent outer edges allows reduce stagnation air flow around the first and second components and the edge thickness in the corner region that is less than or equal to the wall thickness provides enhanced heat transfer properties.
2. The system of claim 1 wherein the first and second components are turbine engine components.
3. The system of claim 1 wherein the first and second components are head end plates, whereby the head end plates close off at least a portion of the combustion chamber of a turbine engine.
4. The system of claim 1 wherein the first and second components are disposed substantially laterally adjacent to each other.
5. The system of claim 1 wherein the first and second components are disposed substantially circumferentially adjacent to each other.
6. The system of claim 1 wherein a coolant is supplied to the hollow interior of the first and second components.
7. The system of claim 1 wherein the exterior surfaces of the component walls are exposed to high temperature gas flow.
8. The system of claim 1 wherein the outer edges culminate in a substantially 90 degree edge.
9. The system of claim 1 wherein the outer edges culminate in a substantially rounded edge portion.
10. A system for reducing flow stagnation between substantially adjacent components and enhancing corner heat distribution of the components comprising:
a first component and a second component, each of the first and second components being generally hollow and having at least two walls with an interior surface and an exterior surface, each of the at least two walls including a substantially planar region transitioning into a corner region, each substantially planar region having a wall thickness,
the exterior surfaces of the at least two walls joining in the corner region to form an outer edge, each of the outer edges being shaped to reduce stagnation of fluid flow therearound,
the interior surfaces of the at least two walls joining in the corner region to form an inner edge, the interior surfaces being arranged relative to the exterior surfaces to provide enhanced heat distribution properties in the corner regions of the components, wherein, in the corner region, the interior surface of each wall approaches the exterior surface such that the thickness at the inner edge is less than or equal to the wall thickness,
whereby the adjacent outer edges allows reduce stagnation air flow around the first and second components and the thickness of the inner edge that is less than or equal to the wall thickness provides enhanced heat transfer properties.
11. A component having enhanced thermal distribution properties comprising:
a generally hollow body including an inner volume, wherein the inner volume is supplied with a coolant, the body having at least two walls adjoining each other in a corner region, each of the at least two walls having an interior surface and an exterior surface, each of the at least two walls including a substantially planar region transitioning into the corner region, each substantially planar region having a wall thickness, wherein the exterior surfaces of the at least two walls join in the corner region to form an outer edge and the interior surfaces of the at least two walls join in the corner region to form an inner edge, the distance between the inner edge and the outer edge defining an edge thickness,
wherein, in the corner region, the interior surface of each wall approaches the exterior surface such that the edge thickness is less than or equal to the wall thickness.
12. The component of claim 11 wherein the component is substantially rectangular.
13. The component of claim 11 wherein the wall thicknesses of the at least two walls are substantially identical.
14. The component of claim 11 wherein the outer edge culminates in a substantially 90 degree edge.
15. The component of claim 11 wherein the outer edge culminates in a substantially rounded edge.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An image display system having a multi-gate thin-film transistor (TFT) disposed on a transparent substrate, wherein the multi-gate TFT comprises:
a silicon film layer, which is formed on the transparent substrate and has a first crystallization zone and a second crystallization zone that are not adjacent to each other, wherein a grain size of the first crystallization zone is smaller than a grain size of the second crystallization zone;
a first electrode, which corresponds to the first crystallization zone and is disposed on the silicon film layer; and
a reflecting layer, which corresponds to the second crystallization zone and is disposed on the transparent substrate, wherein the silicon film layer is disposed on the transparent substrate and the reflecting layer.
2. The system according to claim 1, wherein the silicon film layer is illuminated by a laser beam having a wavelength longer than 400 nanometers and absorbs a portion of the laser beam so that the silicon film layer is heated to melt, and the other portion of the laser beam penetrates through the second crystallization zone of the silicon film layer and is reflected from the reflecting layer to the silicon film layer so that the second crystallization zone of the silicon film layer absorbs the reflected laser beam and is thus heated and recrystallized.
3. The system according to claim 1, wherein the multi-gate TFT further comprises:
a second electrode, which corresponds to the second crystallization zone and is disposed on the silicon film layer.
4. The system according to claim 3, wherein the first electrode serves as a gate of a first sub-TFT, and the second electrode serves as a gate of a second sub-TFT.
5. The system according to claim 3, wherein the first electrode serves as a gate of a first sub-TFT, and the second electrode and the reflecting layer serve as a gate of a second sub-TFT.
6. The system according to claim 1, wherein the first electrode serves as a gate of a first sub-TFT, and the reflecting layer serves as a gate of a second sub-TFT.
7. The system according to claim 6, wherein the first sub-TFT operates in an active region, and the second sub-TFT operates in a saturation region.
8. The system according to claim 7, wherein a width-to-length ratio of a channel region of the first sub-TFT is smaller than a width-to-length ratio of a channel region of the second sub-TFT.
9. The system according to claim 1, wherein the reflecting layer has a thickness greater than 100 angstroms.
10. The system according to claim 1, wherein a length of the first crystallization zone is longer than a length of the second crystallization zone.
11. The system according to claim 1, wherein the multi-gate TFT further comprises:
a buffer layer disposed on the transparent substrate, wherein the silicon film layer is disposed on the buffer layer; and
a gate insulating layer disposed on the silicon film layer, wherein the first electrode is disposed on the gate insulating layer.
12. The system according to claim 1, wherein the silicon film layer further comprises:
a first doped region disposed near the first crystallization zone to serve as a source of the multi-gate TFT;
a second doped region disposed between the first crystallization zone and the second crystallization zone; and
a third doped region disposed near the second crystallization zone to serve as a drain of the multi-gate TFT.
13. The system according to claim 1, further comprising:
an active matrix display panel having the transparent substrate and the multi-gate TFT.
14. The system according to claim 13, further comprising:
an electronic device having the active matrix display panel and an input unit coupled with the active matrix display panel, wherein the input unit provides an input for the active matrix display panel to make the active matrix display panel display an image.
15. The system according to claim 14, wherein the electronic device is a mobile phone, a digital camera, a personal digital assistant, a notebook computer, a desktop computer, a television, a vehicle display or a portable DVD player.
16. A method of manufacturing a multi-gate thin-film transistor (TFT), the method comprising steps of:
forming a reflecting layer on a transparent substrate;
forming a silicon film layer on the transparent substrate and the reflecting layer, wherein the silicon film layer has a first crystallization zone and a second crystallization zone corresponding to the reflecting layer;
illuminating a laser beam having a wavelength longer than 400 nanometers on the silicon film layer, wherein the silicon film layer absorbs a portion of the laser beam and is thus heated to melt, and the other portion of the laser beam penetrates through the second crystallization zone of the silicon film layer and is reflected from the reflecting layer to the silicon film layer so that the second crystallization zone of the silicon film layer absorbs the reflected laser beam and is heated and recrystallized;
forming a gate insulating layer on the silicon film layer; and
forming a first electrode, which corresponds to the first crystallization zone, on the gate insulating layer.
17. The method according to claim 16, further comprising a step of:
forming a second electrode, which corresponds to the second crystallization zone, on the gate insulating layer.
18. The method according to claim 17, wherein the first electrode serves as a gate of a first sub-TFT, and the second electrode serves as a gate of a second sub-TFT.
19. The method according to claim 17, wherein the first electrode serves as a gate of a first sub-TFT, and the second electrode and the reflecting layer serve as a gate of a second sub-TFT.
20. The method according to claim 16, wherein the first electrode serves as a gate of a first sub-TFT, and the reflecting layer serves as a gate of a second sub-TFT.