1. A compound of formula (I):
wherein:
A1 represents an alkylene, alkyleneoxy, alkylenethio, alkanoylene or hydroxyalkylene group;
A2 represents an alkylene, alkyleneoxy, alkylenethio, alkanoylene or an alkyleneoxyalkylene group;
W1 represents a phenylene, furanylene or pyridinylene group which is unsubstituted or substituted by one or more halogen atoms, alkoxy groups andor alkyl groups;
W2 represents a 3\u201310 membered monocyclic or bicyclic group containing from 1 to 3 heteroatoms said group being unsubstituted or substituted by one or more halogen atoms, alkyl groups, alkoxy groups andor oxo groups;
R1 represents a hydrogen or halogen atom or an alkyl, alkoxy or methylamino group; and
R2 represents a carboxyl group;
and pharmaceutically acceptable salts thereof.
2. A compound according to claim 1 wherein A1 represents a C1-3 alkylene, or C1-5 alkyleneoxy group.
3. A compound according to claim 1 wherein A2 represents a C1-5 alkylene, C1-5 alkanoylene, C2-5 alkyleneoxy, C2-5 alkylenethio or C2-5 alkyleneoxy-C1-5 alkylene group.
4. A compound according to claim 1 wherein W1 represents an unsubstituted phenylene, furanylene or pyridinylene group or a phenylene group substituted by one or two substituents selected from fluorine atoms, chlorine atoms, bromine atoms, methyl groups and methoxy groups.
5. A compound according to claim 1 wherein the heteroatom(s) contained in the substituent W2 are selected from oxygen, sulphur and nitrogen.
6. A compound according to claim 5 wherein W2 represents a dioxolanyl, dioxanyl, pyrazolidinyl, isoindolinyl benzodioxolanyl, tetrahydropyranyl, tetrahydrofuranyl, oxetanyl, furanyl, thienyl, pyrrolyl, pyridinyl, imidazolyl, dihydrothiazolyl, benzothiazolyl, pyrrolidinyl, benzooxazolyl, benzothienyl, pyranyl, benzofuranyl, isobenzylfuranyl, chromenyl, pyrazolyl, oxazolyl, isooxazolyl, furazanyl, isochromanyl, chromanyl, pyrrolinyl, imidazolidinyl, imidazolinyl, pyrazolinyl, piperidyl, piperazinyl, indolinyl, morpholinyl, pyrazinyl, pyrimidinyl, pyridazinyl, indolizinyl, isoindolyl, indolyl, indazolyl, quinazolinyl, isoquinazolinyl, quinolyl, phthalazinyl, naphthyridinyl, quinoxalinyl, quinazolinyl or cinnolinyl group which is unsubstituted or substituted by one or more halogen atoms, C1-7 alkyl groups, C1-7 alkoxy groups andor oxo groups.
7. A compound according to claim 6 wherein W2 represents a dioxolanyl, dioxanyl, pyrazolidinyl, benzodioxolanyl, tetrahydropyranyl, tetrahydrofuranyl, oxetanyl, furanyl, thienyl, pyrrolyl, pyridinyl, pyrrolidinyl or benzooxazolyl group which is unsubstituted or substituted by one or more fluorine atoms, chlorine atoms, bromine atoms, C1-4 alkyl groups, C1-4 alkoxy groups andor oxo groups.
8. A compound according to claim 1 wherein R1 represents a hydrogen, fluorine, chlorine or bromine atom or a methyl, methoxy or methylamino group.
9. A compound of formula (I) according to claim 1 which is:
2-{2-4-(1-1,3dioxolan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
2-(2-{4-1-(tetrahydro-pyran-2-ylmethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-{2-4-(1-pyridin-4-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
2-(2-{4-1-(3-pyrrol-1-yl-propyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-(2-{4-1-(3-thiophen-2-yl-propyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-2-(4-{1-3-(1-methyl-1H-imidazol-2-ylsulfanyl)-propyl-1H-indol-3-yl}-piperidin-1-yl)-ethoxy-benzoic acid;
2-2-(4-{1-2-(2,5,5-trimethyl-1,3dioxan-2-yl)-ethyl-1H-indol-3-yl}-piperidin-1-yl)-ethoxy-benzoic acid;
2-{2-4-(1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylethoxy}-benzoic acid;
2-{2-4-(1-furan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
2-(2-{4-1-(2-oxo-2-pyrrolidin-1-yl-ethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-{2-4-(1-thiophen-3-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
2-(2-{4-1-(2-thiophen-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-(2-{4-1-(2-thiophen-3-yl-ethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-2-(4-{1-3-(tetrahydro-furan-2-yl)-propyl-1H-indol-3-yl}-piperidin-1-yl)-ethoxy-benzoic acid;
2-(2-{4-1-(4-1,3dioxolan-2-yl-butyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-2-(4-{1-3-(benzo1,3dioxol-5-yloxy)propyl-1H-indol-3-yl}piperidin-1-yl)ethoxybenzoic acid;
2-2-(4-{1-3-(1,3-dioxo-1,3-dihydro-isoindol-2-yl)-propyl-1H-indol-3-yl}-piperidin-1-yl)-ethoxy-benzoic acid;
2-{2-4-(1-benzo1,3dioxol-5-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
2-(2-{4-1-(5-chloro-thiophen-2-ylmethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-2-(4-{1-4-(5-methyl-2-oxo-benzooxazol-3-yl)-butyl-1H-indol-3-yl}-piperidin-1-yl)-ethoxy-benzoic acid;
2-(2-{4-1-(3-1,3dioxolan-2-yl-propyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-{2-4-(6-fluoro-1-furan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
2-(2-{4-1-(2-1,3dioxolan-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-(2-{4-1-(2-1,3dioxolan-2-yl-ethyl)-6-fluoro-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
3-4-(1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
3-4-(1-pyridin-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
3-{4-1-(5-chloro-thiophen-2-ylmethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
3-{4-1-(2-1,3dioxolan-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
3-{4-1-(3-1,3dioxolan-2-yl-propyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
3-4-(1-pyridin-4-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
3-(4-{1-3-(benzo1,3dioxol-5-yloxy)-propyl-1H-indol-3-yl}-piperidin-1-ylmethyl)-benzoic acid;
3-4-(1-1,3dioxolan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
3-4-(1-pyridin-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-methoxy-5-4-(1-pyridin-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
5-{4-1-(2-1,3dioxolan-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-2-methoxy-benzoic acid;
5-{4-1-(3-1,3dioxolan-2-yl-propyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-2-methoxy-benzoic acid;
2-methoxy-5-4-(1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-methoxy-5-4-(1-pyridin-4-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
4-bromo-3-4-(1-1,3dioxolan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
4-bromo-3-4-(1-pyridin-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
4-bromo-3-{4-1-(2-1,3dioxolan-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
4-bromo-3-{4-1-(3-1,3dioxolan-2-yl-propyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
4-bromo-3-4-(1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-{4-5-methoxy-1-(2-thiophen-3-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
3-(4-{1-3-(benzo1,3dioxol-5-yloxy)-propyl-1H-indol-3-yl}-piperidin-1-ylmethyl)-4-bromo-benzoic acid;
2-fluoro-5-4-(1-pyridin-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
5-{4-1-(2-1,3dioxolan-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-2-fluoro-benzoic acid;
5-{4-1-(3-1,3dioxolan-2-yl-propyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-2-fluoro-benzoic acid;
2-fluoro-5-4-(1-pyridin-4-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
5-(4-{1-3-(benzo1,3dioxol-5-yloxy)-propyl-1H-indol-3-yl}-piperidin-1-ylmethyl)-2-fluoro-benzoic acid;
5-4-(1-1,3dioxolan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-2-fluoro-benzoic acid;
2-fluoro-5-4-(1-pyridin-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-(2-{4-1-(tetrahydro-furan-3-ylmethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-(2-{4-1-(2-morpholin-4-yl-ethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-(2-{4-1-(3-methyl-oxetan-3-ylmethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-{2-4-(1-furan-3-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
2-(2-{4-1-(2-pyridin-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
3-{4-1-(tetrahydro-furan-3-ylmethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
3-{4-1-(3-methyl-oxetan-3-ylmethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
3-{4-1-(2-thiophen-3-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
3-4-(1-furan-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-4-(1-pyridin-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-nicotinic acid;
2-{4-1-(2-morpholin-4-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-nicotinic acid;
2-4-(1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-nicotinic acid;
3-{4-1-(5-chloro-thiophen-2-ylmethyl)-6-fluoro-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
3-{4-6-fluoro-1-(2-thiophen-3-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
3-{4-6-fluoro-1-(2-thiophen-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
2-methoxy-5-{4-1-(2-thiophen-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
5-{4-6-fluoro-1-(2-thiophen-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-2-methoxy-benzoic acid;
5-{4-6-fluoro-1-(2-morpholin-4-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-2-methoxy-benzoic acid;
5-{4-1-(2-1,4dioxan-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-2-methoxy-benzoic acid;
3-{4-1-(2-1,4dioxan-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
2-methoxy-5-4-(1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
4-bromo-3-4-(1-pyridin-4-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-methoxy-5-{4-1-(2-thiophen-3-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
3-{4-1-(2-morpholin-4-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
2-2-(4-{1-2-(benzo1,3dioxol-5-yloxy)-ethyl-1H-indol-3-yl}-piperidin-1-yl)-ethoxy-benzoic acid;
5-{4-6-fluoro-1-(2-thiophen-3-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-2-methoxy-benzoic acid;
5-{4-1-(5-chloro-thiophen-2-ylmethyl)-6-fluoro-1H-indol-3-yl-piperidin-1-ylmethyl}-2-methoxy-benzoic acid;
5-4-(6-fluoro-1-furan-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-2-methoxy-benzoic acid;
3-{4-1-(2-pyridin-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
5-4-(6-fluoro-1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-2-methoxy-benzoic acid;
3-4-(1-furan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-(2-{4-1-(2-1,4dioxan-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
5-4-(1-furan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-2-methoxy-benzoic acid;
5-4-(1-furan-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-2-methoxy-benzoic acid;
3-{4-5-methoxy-1-(2-thiophen-3-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
2-(2-{4-5-methoxy-1-(2-thiophen-3-yl-ethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-{2-4-(5-methoxy-1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
3-4-(5-methoxy-1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-methoxy-5-{4-5-methoxy-1-(2-thiophen-3-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
2-{2-4-(1-furan-3-ylmethyl-5-methoxy-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
3-4-(1-furan-3-ylmethyl-5-methoxy-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-4-(1-furan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-4-(6-fluoro-1-furan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
3-4-(6-fluoro-1-furan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
5-4-(6-fluoro-1-furan-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-2-methoxy-benzoic acid;
4-methoxy-2-4-(5-methoxy-1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-4-(5-methoxy-1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-methoxy-5-4-(5-methoxy-1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-4-(1-furan-2-ylmethyl-5-methoxy-1H-indol-3-yl)-piperidin-1-ylmethyl-4-methoxy-benzoic acid;
3-4-(1-furan-2-ylmethyl-5-methoxy-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-4-(1-furan-2-ylmethyl-5-methoxy-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
5-4-(1-furan-2-ylmethyl-5-methoxy-1H-indol-3-yl)-piperidin-1-ylmethyl-2-methoxy-benzoic acid;
2-{2-4-(1-furan-2-ylmethyl-5-methoxy-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
4-methoxy-2-{4-5-methoxy-1-(2-thiophen-3-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
2-{2-4-(6-fluoro-1-thiophen-2-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
5-4-(6-fluoro-1-thiophen-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-2-methoxy-benzoic acid;
2-{2-4-(6-fluoro-1-thiophen-3-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
2-(2-{4-6-fluoro-1-(2-thiophen-3-yl-ethyl)-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-(2-{4-1-(5-chloro-thiophen-2-ylmethyl)-6-fluoro-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
2-{2-4-(6-fluoro-1-furan-3-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
2-{2-4-(5-methoxy-1-thiophen-3-ylmethyl-1H-indol-3-yl)-piperidin-1-yl-ethoxy}-benzoic acid;
3-4-(5-methoxy-1-thiophen-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
2-(2-{4-1-(5-chloro-thiophen-2-ylmethyl)-5-methoxy-1H-indol-3-yl-piperidin-1-yl}-ethoxy)-benzoic acid;
3-{4-1-(5-chloro-thiophen-2-ylmethyl)-5-methoxy-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
2-methoxy-5-4-(1-thiophen-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
3-4-(1-thiophen-3-ylmethyl-1H-indol-3-yl)-piperidin-1-ylmethyl-benzoic acid;
5-{4-1-(5-chloro-thiophen-2-ylmethyl)-5-methoxy-1H-indol-3-yl-piperidin-1-ylmethyl}-2-methoxy-benzoic acid;
3-{4-5-methoxy-1-(2-thiophen-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
2-methoxy-5-{4-5-methoxy-1-(2-thiophen-2-yl-ethyl)-1H-indol-3-yl-piperidin-1-ylmethyl}-benzoic acid;
or a pharmaceutically acceptable salt thereof.
10. A process for producing a compound of claim 1, which process comprises for compounds of formula (I) wherein R2 is a carboxyl group, the hydrolysis of a compound of formula (VI)
wherein in formula (VI) A1, A2, W1, W2 and R1 are as defined in claim 1 and R3 is a \u2014COOR4 group wherein R4 represents a C1\u2013C4 alkyl group.
11. A compound according to claim 1 wherein the alkyl, alkylene, alkyleneoxy, alkylenethio, alkanoylene, hydroxyalkylene and alkoxy groups mentioned in relation to the groups A1, A2, W1, W2, and R1 contain up to seven carbon atoms.
12. A compound according to claim 11, wherein the alkyl, alkylene, alkyleneoxy, alkyenethio, alkanoylene, hydroxyalkylene and alkoxy groups mentioned in relation to the groups A1, A2, W1, W2, and R1 contain up to five carbon atoms.
13. A pharmaceutical composition comprising an antihistaminically effective amount or an antiallergically effective amount of a compound according to claim 1 and a pharmaceutically acceptable diluent or carrier, wherein the allergic disorder or disease is bronchial asthma, rhinitis, conjunctivitis, dermatitis or urticaria.
14. A method for treating an allergic disorder or disease which comprises administering to a human or animal patient in need of such treatment an antihistaminically effective amount or an antiallergically effective amount of a compound according to claim 1 or a composition according to claim 13 wherein the allergic disorder or disease is bronchial asthma, rhinitis, conjunctivitis, dermatitis or urticaria.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method for manufacturing a N-channel type semiconductor device comprising:
forming a silicon film over an insulating substrate;
crystallizing said silicon film with a catalyst material for accelerating crystallization, said crystallized silicon film comprising a channel region;
introducing phosphorus ions into said crystallized silicon film to form source and drain regions therein, said phosphorus serving as a N-type impurity and a gettering material for said catalyst in said channel region; and
annealing said crystallized silicon film to activate said introduced phosphorus and cause said phosphorus to serve as said gettering material;
wherein said gettering materials in said source and drain regions remove said catalyst in said channel region.
2. The method of claim 1 wherein said catalyst in said channel region is transferred from said channel region to said source and drain regions by said gettering materials, so that concentration of said catalyst in said channel region be lower than that of said source and drain regions.
3. The method of claim 1 wherein said crystallization is performed by a thermal annealing or a laser annealing.
4. The method of claim 1 wherein said annealing is one of a thermal annealing and a laser annealing.
5. The method of claim 1 further comprising the steps of;
forming a gate insulating film on said crystallized silicon film; and
forming a gate electrode on said gate insulating film;
wherein said phosphorus ions are introduced into said crystallized silicon film by using said gate electrode as a mask.
6. The method of claim 1 wherein said catalyst material comprises a nickel, concentration thereof being in a range of 11015 to 11019 atomscm3.
7. A method for manufacturing a P-channel type semiconductor device comprising:
forming a silicon film over an insulating substrate;
crystallizing said silicon film with a catalyst material for accelerating crystallization, said crystallized silicon film comprising a channel region;
introducing P-type impurity ions into said crystallized silicon to form source and drain regions therein;
introducing phosphorus ions into said source and drain regions, said phosphorus serving as a gettering material for said catalyst in said channel region; and
annealing said crystallized silicon film to activate said introduced P-type impurity and cause said phosphorus to serve as said gettering material;
wherein said gettering materials in said source and drain regions remove said catalyst in said channel region.
8. The method of claim 7 wherein said catalyst in said channel region is transferred from said channel region to said source and drain regions by said gettering materials, so that concentration of said catalyst in said channel region be lower than that of said source and drain regions.
9. The method of claim 7 wherein said crystallization is performed by a thermal annealing or a laser annealing.
10. The method of claim 7 wherein said annealing is one of a thermal annealing and a laser annealing.
11. The method of claim 7 further comprising the step of;
forming a gate insulating film on said crystallized silicon film; and
forming a gate electrode on said gate insulating film;
wherein said phosphorus ions and said P-type impurity ions are introduced into said source and drain regions by using said gate electrode as a mask.
12. The method of claim 7 wherein said catalyst material comprises a nickel, concentration thereof being in a range of 11015 to 11019 atomscm3.
13. The method of claim 7 wherein concentration of said P-type impurity in said source and drain regions is higher than that of said phosphorus.
14. A method for manufacturing a complementary semiconductor device consisting of N-channel and P-channel type transistors comprising:
forming a silicon film over an insulating substrate;
crystallizing said silicon film with a catalyst material for accelerating crystallization;
forming a pair of active regions from said crystallized silicon film, said active region including a channel region and source and drain regions;
introducing phosphorus ions into said active regions, said phosphorus serving as a N-type impurity and a gettering material for said catalyst in said channel region;
selectively introducing P-type impurity ions into one of said active regions; and
annealing said active regions to activate said introduced phosphorus and said P-type impurity and cause said phosphorus to serve as said gettering material;
wherein said gettering materials in said source and drain regions remove said catalyst in said channel regions.
15. The method of claim 14 wherein said catalysts in said channel region are transferred from said channel region to said source and drain regions by said gettering materials, so that concentration of said catalyst in said channel region be lower than that of said source and drain regions.
16. The method of claim 14 wherein said crystallization is performed by a thermal annealing or a laser annealing.
17. The method of claim 14 wherein said annealing is one of a thermal annealing and a laser annealing.
18. The method of claim 14 further comprising the step of;
forming gate insulating films on said active regions; and
forming gate electrodes on said gate insulating films;
wherein said phosphorus ions and said P-type impurity ions are introduced into said active regions by using said gate electrodes as masks.
19. The method of claim 14 wherein said catalyst material comprises a nickel, concentration thereof being in a range of 11015 to 11019 atomscm3.
20. The method of claim 14 wherein concentration of said introduced P-type impurity is higher than that of said phosphorus.
21. A method for manufacturing a N-channel type semiconductor device comprising:
forming a silicon film over an insulating substrate;
crystallizing said silicon film with a catalyst material for accelerating crystallization;
forming an active region including a channel region from said crystallized silicon film;
introducing phosphorus ions into said active region to form first and second impurity regions, said first impurity regions serving as source and drain regions and said second impurity region being positioned between said source and drain regions and said channel region and;
annealing said active region to activate said introduced phosphorus and cause said phosphorus to getter said catalyst material so that said gettering materials in said source and drain regions remove said catalyst in said channel regions;
wherein concentration of said second impurity region is lower than that of said first impurity region.
22. A method for manufacturing a P-channel type semiconductor device comprising:
forming a silicon film over an insulating substrate;
crystallizing said silicon film with a catalyst material for accelerating crystallization;
forming an active region including a channel region from said crystallized silicon film;
introducing P-type impurity ions into said active region to form first and second impurity regions, said first impurity regions serving as source and drain regions and said second impurity region being positioned between said source and drain regions and said channel region;
introducing phosphorus ions into said first and second impurity regions, respectively; and
annealing said active region to activate said introduced P-type impurity and cause said phosphorus to getter said catalyst material so that said gettering materials in said source and drain regions remove said catalyst in said channel regions;
wherein concentrations of said P-type impurity and said phosphorus in said second impurity region are lower than these of said first region.
23. A method for manufacturing a complementary semiconductor device consisting of N-channel and P-channel transistors comprising:
forming a silicon film over an insulating substrate;
crystallizing said, silicon film with a catalyst material for accelerating crystallization;
forming a pair of active regions from said crystallized silicon film, said active region comprising a channel region;
introducing phosphorus ions into said active regions to form first and second impurity regions respectively, said first impurity regions serving as source and drain regions and said second region being positioned between said first region and said channel region;
selectively introducing P-type impurity ions into one of said active regions, said P-type impurity being introduced into said first and second impurity regions thereof; and
annealing said active regions to activate said introduced phosphorus and said P-type impurity and cause said phosphorus to getter said catalyst material so that said gettering materials in said source and drain regions remove said catalyst in said channel regions;
wherein concentrations of said P-type impurity and said phosphorus in said second impurity region are lower than these of said first impurity region.
24. A semiconductor device for a P-channel type transistor comprising:
a silicon film formed over an insulating substrate; and
source and drain regions formed in said silicon film; and
a channel region positioned between said source and drain regions;
wherein a catalyst material, phosphorus and P-type impurity are incorporated in said source and drain regions, respectively.
25. The device of claim 24 wherein said catalyst material serves as a crystallization accelerating material for said silicon film and phosphorus serves as a gettering material for removing said catalyst in said channel region.
26. A semiconductor device for a complementary MOS transistors comprising:
first and second active regions formed on an insulating substrate, said active region comprising a channel region;
first impurity regions formed in said first active region, a catalyst material and phosphorus being incorporated therein; and
second impurity regions formed in said second active region, a catalyst material, phosphorus and P-type impurity being incorporated therein.
27. The device of claim 26 wherein said catalyst material serves as a crystallization accelerating material for said silicon and phosphorus serves as a gettering material for removing said catalyst in said channel region.
28. A semiconductor device for a P-channel type transistor comprising:
a silicon film formed over an insulating substrate, said silicon film including a channel region;
first impurity regions formed in said silicon film;
second impurity regions formed in said silicon film, said second region being positioned between said first region and said channel region;
wherein a catalyst material, phosphorus and P-type impurity are incorporated in said first and second impurity regions, respectively.
29. The device of claim 28 wherein said catalyst material serves as a crystallization accelerating material for said silicon film and phosphorus serves as a gettering material for removing said catalyst in said channel region, and
concentrations of said P-type impurity and said phosphorus in said second impurity region are lower than these of said first region.
30. A semiconductor device for a complementary MOS transistors comprising:
first and second active regions formed on an insulating substrate, said active region comprising a channel region;
first and second impurity regions formed in said first active region, a catalyst material and phosphorus being incorporated therein; and
third and fourth impurity regions formed in said second active region, a catalyst material, phosphorus and P-type impurity being incorporated therein.
31. The device of claim 30 wherein said catalyst material serves as a crystallization accelerating material for said silicon, and
phosphorus serves as a gettering material for removing said catalyst in said channel region.
32. The device of claim 30 wherein concentrations of said phosphorus in said second impurity region are lower than that of said first region, and
concentrations of said P-type impurity and said phosphorus in said forth impurity region are lower than these of said third region.