1. A light attachment for fastening to a carrier structure including a light source, a battery and a light source controlling switch comprising:
a casing with a front side and a rear side including a head portion with a first opening for the light source in the front side and an elongated body portion with a second opening in the front side;
a switch actuating arm in the front side located in said second opening;
a removable elastic sleeve for surrounding at least a part of the elongated body portion and a part of the carrier structure to urge and fasten the rear side of the casing to the carrier structure.
2. The light attachment according to claim 1, wherein the casing has a substantially wedge-shaped structure tapered on the front side and widened on the rear side.
3. The light attachment according to claim 1, wherein the casing includes two lateral beams joined together by the head portion at one end and by a bottom at the other end.
4. The light attachment according to claim 3, wherein the switch actuating arm is located between the beams and mounted for rocking motion on the front edges of the beams through lateral pivots and the front edges of the beams are provided with recesses for receiving said lateral pivots.
5. The light attachment of claim 3, wherein the beams are connected by a baffle dividing the internal space of the casing between the head portion and the bottom into a switch compartment and a battery compartment.
6. The light attachment of claim 1, wherein the outer surface of the elastic sleeve has a selectively embossed structure.
7. The light attachment of claim 6, wherein the outer surface of the elastic sleeve has a specific knurling in the area covering the switch actuating arm separated by a boss from the other embossed structure of the front side.
8. The light attachment of claim 1, wherein the elastic sleeve is a belt provided with connecting means at its ends.
9. The light attachment of claim 1, wherein the carrier structure is a spray-defense apparatus.
10. The light attachment of claim 1, wherein the carrier structure is a baton.
11. A light attachment for fastening to a carrier structure including a light source, a battery and a light source controlling switch comprising:
a casing of a substantially wedge-shaped structure tapered on the front side and widened on the rear side including two lateral beams forming an elongated body joined together by a head portion at one end and by a bottom at the other end;
a first opening for the light source in the front side of the head portion;
a second opening in the front side of the elongated body;
a switch actuating arm located in said second opening and mounted for rocking motion on said lateral beams;
a removable elastic sleeve for surrounding at least a part of the elongated body portion and a part of the carrier structure to urge and fasten the rear side of the casing to the carrier structure.
12. A light attachment for fastening to a carrier structure including a light source, a battery and a light source controlling switch comprising:
a casing of a substantially wedge-shaped structure tapered on the front side and widened on the rear side including two lateral beams forming an elongated body joined together by the top head portion at one end and by a bottom at the other end;
a cross baffle between the lateral beams and dividing the internal space of the casing between the head portion and the bottom into a switch compartment and a battery compartment;
a first opening for the light source in the front side of the head portion;
a second opening in the front side of the elongated body;
a switch actuating arm located in said second opening between the beams and mounted for rocking motion on the beams;
means for fastening the light attachment to the carrier structure.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A device, comprising:
a) a metal antenna andor inductor;
b) an interposer attached to said antenna andor inductor;
c) a dielectric layer on said interposer andor on at least part of said metal antenna andor inductor, configured to support integrated circuitry and insulate said integrated circuitry from said interposer andor said metal antenna andor inductor;
d) a plurality of diodes and a plurality of thin film transistors on said dielectric layer, said diodes having at least one semiconductor layer in common with said thin film transistors, said at least one semiconductor layer in common with said thin film transistors being formed from a liquid-phase ink comprising silicon; and
e) a plurality of capacitors (i) on or in contact with said dielectric layer and said metal antenna andor inductor, and (ii) in electrical communication with said metal antenna andor inductor and at least some of said diodes, said plurality of capacitors having at least one semiconductor layer in common with said plurality of diodes andor at least one metal layer in common with contacts to said diodes and thin film transistors, said at least one semiconductor layer in common with said plurality of diodes being formed from a same or different liquid-phase ink comprising silicon.
2. The device of claim 1, wherein said plurality of diodes have at least two different semiconductor layers in common with said plurality of thin film transistors.
3. The device of claim 2, wherein a first of said at least two different semiconductor layers comprises a lightly doped inorganic semiconductor and a second of said at least two different semiconductor layers comprises a heavily doped inorganic semiconductor.
4. The device of claim 1, further comprising an interlayer dielectric on or over said plurality of diodes and said plurality of thin film transistors.
5. The device of claim 4, further comprising a metallization layer over said interlayer dielectric, in electrical communication with said plurality of diodes and said plurality of thin film transistors.
6. The device of claim 5, wherein said plurality of capacitors have an upper plate comprising said metallization layer.
7. The device of claim 1, comprising a power conversion block, a logic block, and a memory block, said power conversion block receiving a signal from said metal antenna andor inductor and comprising a first subset of said diodes and at least a subset of said capacitors, said logic block receiving power from said power conversion block and communicating with said memory block, said logic block comprising a first subset of said thin film transistors, and said memory block comprising a second subset of said diodes andor a second subset of said thin film transistors.
8. The device of claim 7, further comprising a clock recovery andor demodulator block, configured to receive said signal from said metal antenna andor inductor and comprising a third subset of said diodes andor a third subset of said thin film transistors.
9. The device of claim 8, further comprising a modulator block, configured to receive information from said logic block and provide an output signal to said metal antenna andor inductor, said modulator block comprising a fourth subset of said diodes andor a fourth subset of said thin film transistors.
10. The device of claim 9, further comprising an inputoutput control block or sub-block, configured to receive an input signal from said clock recovery andor demodulator block and provide said information to said modulator block, said inputoutput control block or sub-block comprising a fifth subset of said thin film transistors.
11. The device of claim 1, wherein the device comprises a radio frequency identification (RFID) device.
12. The device of claim 1, wherein the plurality of thin film transistors is in a first region of the device and the plurality of diodes is in a second region of the device.
13. An integrated circuit comprising:
a) an electrically active substrate;
b) a dielectric layer on the substrate;
c) a plurality of first semiconductor layer elements being formed from a first liquid-phase ink comprising silicon, the plurality of first semiconductor layer elements comprising (i) a thin film transistor channel region in a first region of the substrate, and (ii) a first diode layer element in a second region of the substrate;
d) a plurality of second semiconductor layer elements being formed from a second liquid-phase ink comprising silicon, the plurality of second semiconductor layer elements comprising (i) a second semiconductor layer in the first region of the substrate, and (ii) a second diode layer element in the second region of the substrate; and
e) a plurality of metal elements, the metal elements comprising (i) a metal contact on or over the first semiconductor layer elements and the second semiconductor elements in the first region of the substrate, (ii) a metal gate over the thin film transistor channel region, (iii) a diode contact on or over the first semiconductor layer elements and second semiconductor layer elements in the second region of the substrate, and (iv) an upper capacitor plate in a third region of the substrate, wherein a capacitor comprising the upper capacitor plate is configured to electrically communicate with or be in physical contact with an antenna andor inductor.
14. The integrated circuit of claim 13, wherein the substrate comprises a metal foil.
15. The integrated circuit of claim 13, further comprising the antenna andor inductor.
16. An integrated circuit comprising:
a) an electrically active substrate;
b) a dielectric layer on the substrate;
c) a plurality of first semiconductor elements being formed from a first liquid-phase ink comprising silicon, the plurality of first semiconductor layer elements comprising (i) a thin film transistor channel region in a first region of the substrate, (ii) a first diode layer element in a second region of the substrate, and (iii) a first capacitor plate in a third region of the substrate;
d) a plurality of second semiconductor layer elements comprising (i) a second semiconductor layer in the first region of the substrate and (ii) a second diode layer element in the second region of the substrate;
e) a plurality of metal elements on or over the first semiconductor layer elements and the second semiconductor layer elements, the metal elements comprising (i) a metal contact in the first region of the substrate, (ii) a metal gate over the thin film transistor channel region, (iii) a diode contact in the second region of the substrate, and (iv) a second capacitor plate in the third region of the substrate; and
f) an antenna andor inductor in contact with or configured to electrically communicate with a capacitor comprising said first and second capacitor plates.
17. The integrated circuit of claim 16, wherein the substrate comprises a metal foil.
18. The device of claim 1, wherein:
said plurality of capacitors has at least one semiconductor layer in common with said plurality of diodes;
the at least one semiconductor layer common to said plurality of diodes and said plurality of thin film transistors comprises a lightly doped inorganic semiconductor; and
the at least one semiconductor layer common to said plurality of diodes and said plurality of capacitors comprises a heavily doped inorganic semiconductor.
19. The integrated circuit of claim 13, wherein the first region and third region do not overlap.
20. The integrated circuit of claim 19, wherein the second region is between the first region and the third region.
21. The device of claim 1, wherein the silicon in each liquid-phase ink comprises one or more silanes.
22. The integrated circuit of claim 13, wherein the silicon in each liquid-phase ink comprises one or more silanes.
23. The integrated circuit of claim 16, wherein the silicon in the liquid-phase first ink comprises one or more silanes.