1. A method for detecting tissue rejection, said method comprising determining whether or not tissue transplanted into a mammal contains cells having a transplant rejection profile, wherein the presence of said cells indicates that said tissue is being rejected.
2. The method of claim 1, wherein said mammal is a human.
3. The method of claim 1, wherein said tissue is kidney tissue.
4. The method of claim 1, wherein said tissue is a kidney.
5. The method of claim 1, wherein said method comprises using kidney cells obtained from a biopsy to assess the presence or absence of said transplant rejection profile.
6. The method of claim 1, wherein said determining step comprises analyzing nucleic acids.
7. The method of claim 1, wherein said determining step comprises analyzing polypeptides.
8. A method for distinguishing antibody-mediated rejection and T cell-mediated rejection, said method comprising determining whether or not tissue transplanted into a mammal contains cells having an ABMR expression profile, wherein the presence of said cells indicates that said tissue is undergoing antibody-mediated rejection.
9. The method of claim 8, wherein said mammal is a human.
10. The method of claim 8, wherein said tissue is kidney tissue.
11. The method of claim 8, wherein said tissue is a kidney.
12. The method of claim 8, wherein said method comprises using kidney cells obtained from a biopsy to assess the presence or absence of said ABMR expression profile.
13. The method of claim 8, wherein said determining step comprises analyzing nucleic acids.
14. The method of claim 8, wherein said determining step comprises analyzing polypeptides.
15. A method for distinguishing antibody-mediated rejection and T cell-mediated rejection, said method comprising determining whether or not tissue transplanted into a mammal contains cells having a TCMR expression profile, wherein the presence of said cells indicates that said tissue is undergoing T cell-mediated rejection.
16. The method of claim 15, wherein said mammal is a human.
17. The method of claim 15, wherein said tissue is kidney tissue.
18. The method of claim 15, wherein said tissue is a kidney.
19. The method of claim 15, wherein said method comprises using kidney cells obtained from a biopsy to assess the presence or absence of said TCMR expression profile.
20. The method of claim 15, wherein said determining step comprises analyzing nucleic acids.
21. The method of claim 15, wherein said determining step comprises analyzing polypeptides.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for epitaxial growing of at least one III-V group material on top of a substrate or wafer of a non III-V group material, wherein the method comprises a step of providing a pre-processing of a clean wafer with a respective first deposited nucleation layer and a respective second deposited bulk material layer, wherein
the material composition formed in the pre-processing step is further treated to form an interfacial misfit layer by exposing the material composition from the pre-processing step to a low pressure in a range of 1\xb710\u22128 Torr to 3\xb710\u22128 Torr, at a temperature in the range of 400\xb0 C. to 600\xb0 C. for a time interval of 10 seconds to 70 minutes before the treated material composition from the pre-processing step further is grown in an epitaxial process with the at least one III-V group material.
2. The method according to claim 1, wherein the first deposited nucleation layer is formed by aluminium antimonide (AlSb) on a surface of a silicon (Si) wafer, and the second deposited bulk layer is formed by gallium antimonide (GaSb).
3. The method according to claim 2, wherein the first deposited nucleation AlSb layer is provided for with a thickness in a range of 5 \u212b to 50 \u212b.
4. The method according to claim 2, wherein the second deposited bulk GaSb layer is provided for with a thickness in a range of 5 \u212b to 5000 \u212b.
5. The method according to claim 1, wherein the temperature range is controlled by a thermal controller being ramped down to lower the temperature if any material being processed is sensitive to a certain temperature level.
6. The method according to claim 1, wherein the second bulk layer is formed by aluminium antimonide (AlGaSb) and the at least one III-V group material is formed by aluminium gallium arsenide (AlGaAs).
7. The method according to claim 1, wherein the second bulk layer and the at least one III-V group material comprises respective compounds of at least one of the materials from the group of materials gallium (Ga), aluminium (Al) and indium (In).
8. The method according to claim 1, wherein the first nucleation layer is formed by aluminium (Al) and other materials used in the method is a combination of materials from group III-V materials, II-VI materials, I-VIII materials, I-VI materials, VI materials, II-V materials on top of a silicon (Si) wafer.
9. The method according to claim 1, wherein the first deposited nucleation layer is formed by aluminium antimonide (AlSb) with a thickness of 25 \u212b, the second bulk layer is formed by gallium antimonide (GaSb) with a thickness of 500 \u212b, the treatment is provided for by a pressure of 3\xb710-8 Torr at a temperature of 497\xb0 C. for a time interval of 20 seconds.
10. Use of a material manufactured according to a method according to claim 1 for transistors.
11. Use of a material manufactured according to a method according to claim 1 for lasers.
12. Use of a material manufactured according to a method according to claim 1 for solar cells.
13. Use of a material manufactured according to a method according to claim 1 for optical devices.
14. Use of a material manufactured according to a method according to claim 1 for optical devices integrated onto silicon wafers comprising electronic circuitry.