1. A toilet tank shelf comprising:
(a) a horizontal shelf component having a plurality of side edges, a top surface and a bottom surface;
(b) a self leveling and weighted granular pouch attached to the bottom surface of the shelf component;
(c) a edge component vertically attached to the side edge; and
(d) an elastic strap component.
2. The shelf of claim 1 further comprising the edge component extending above the top surface.
3. The shelf of claim 1 further comprising two strap ends.
4. The shelf of claim 3 further comprising the strap end attached to the bottom surface.
5. The shelf of claim 3 further comprising the strap end attached to the edge component.
6. The shelf of claim 1 comprising a plurality of strap components.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A mask comprising:
a silicon member; and
a portion defining an opening penetrating the silicon member;
wherein a corner of the opening is rounded.
2. The mask according to claim 1,
wherein the mask is disposed between a member on which a film is deposited and an evaporation source from which a material is emitted for patterning a thin film on the member, and
the opening is a through-hole in the mask through which the material passes for the patterning.
3. The mask according to claim 1, wherein a radius of the corner that is rounded is from 0.5 \u03bcm to 3.0 \u03bcm inclusive.
4. The mask according to claim 1, wherein the corner further comprises corners of a cross sectional shape and a planar shape of the opening.
5. A method for manufacturing a mask, comprising:
forming an opening penetrating a silicon substrate included in the mask; and
rounding a corner of the opening.
6. The method for manufacturing a mask according to claim 5, wherein the step of rounding the corner is done by performing isotropic etching to the silicon substrate.
7. The method for manufacturing a mask according to claim 6, wherein the isotropic etching is performed by using a substance containing a first material for oxidizing a silicon crystal and a second material for removing a portion oxidized by the first material from the silicon crystal.
8. The method for manufacturing a mask according to claim 6, wherein the isotropic etching is performed by using an etchant containing nitric acid and hydrofluoric acid.
9. The method for manufacturing a mask according to claim 6, wherein the isotropic etching is performed by using an etchant containing nitric acid, hydrofluoric acid, and acetic acid.
10. The method for manufacturing a mask according to claim 6, wherein the isotropic etching is performed by dry etching.
11. The method for manufacturing a mask according to claim 10, wherein the dry etching is performed by using any of an SF6, CF, and chlorinated gas.
12. The method for manufacturing a mask according to claim 5, wherein the step of rounding the corner is done as a last step in a process of manufacturing a mask.
13. The method for manufacturing a mask according to claim 5, wherein the corner that is rounded is provided with either a first or a second radius, the first radius being provided if the mask has a priority for higher accuracy patterning, and the second radius being provided if the mask has a priority for high mechanical endurance, the first radius being smaller than the second radius.
14. A method for manufacturing an electro-optical device, comprising:
forming a thin film pattern making up a layer of the electro-optical device by using the mask according to claim 1.
15. A method for manufacturing an electro-optical device, comprising:
forming a thin film pattern making up a layer of the electro-optical device by using the mask manufactured by the method of manufacturing a mask according to claim 5.
16. Electronic equipment manufactured by using the mask according to claim 1.
17. Electronic equipment manufactured by using the mask manufactured by the method of manufacturing a mask according to claim 5.
18. A mask comprising:
a silicon substrate including at least one through-hole penetrating the silicon substrate, the through-hole being defined by inboard surfaces of the silicon substrate spanning from a top surface of the silicon substrate to a bottom surface of the silicon substrate;
wherein interfaces of the inboard surfaces with the top and bottom surfaces of the silicon substrate are rounded.
19. The mask according to claim 18, wherein a radius of the interfaces that are rounded is from 0.5 \u03bcm to 3.0 \u03bcm inclusive.