1. A water treatment system comprising:
an aquarium having a glass tank having an interior filled with water, said tank having an open top and a top edge;
dual pumps including a first water pump and a second water pump alternating to replenish a water level in the tank and simultaneously maintaining calcium and alkalinity balances;
a pair of reservoirs including a calcium solution reservoir and an alkalinity solution reservoir, said calcium solution reservoir containing fresh reverse osmosis and de-ionized water treated with a calcium supplement, said alkalinity solution reservoir containing fresh reverse osmosis and de-ionized water treated with an alkalinity supplement;
a first pair of pipes including a first pipe and a second pipe, wherein said first pipe connects said calcium reservoirs to said first dual pump, and wherein said second pipe connects said alkalinity solution reservoir to said second pump;
a second pair of pipes including a third pipe and a fourth pipe, wherein said third pipe carries solution from said first pumps into said interior of said tank, and wherein said fourth pipe carries solution from said second pipe into said interior of said tank;
a pair of pipe holders including a first and second pipe holder attachable to said top edge of said aquarium, wherein said first pipe holder holds said third pipe positionable downwardly and into said interior of said tank, and wherein said second pipe holder holds said fourth pipe positionable downwardly and into said interior of said tank;
a switch box having a back end and a top surface and positionable between said calcium solution reservoir and said alkalinity solution reservoir, wherein said switch box having two alternating current power sockets attachable to said back end for delivering electrical power to said first and second water pumps separately, wherein said back end having an alternating current power cord and wires extending from said water level sensors, wherein said top surface having three apertures thereon;
three light emitting diodes including a first, second and third light emitting diode, one said diode extending upwardly through each said aperture, wherein said first light emitting diode indicating power, said second light emitting diode indicating activation of said calcium solution reservoir, and said third light emitting diode indicating activation of said alkalinity solution reservoir;
a printed circuit board housed within said switch box, having a solid state relay mounted thereon and in communication with each pump for alternating pumping from said calcium solution reservoir to said alkalinity solution reservoir;
wherein said first and second dual pumps each have a bottom end having an alternating current line cord extending outwardly therefrom, each alternating current line cord having a two prong alternating current power plug for plugging into one of said alternating current power sockets of said switch box, wherein said first pump is separately connected by said first pipe to said calcium solution reservoir, wherein said second pump is separately connected by said second pipe to said alkalinity solution reservoir;
a pair of water level sensors in communication with said solid state relay, said sensors having a top end electrically connected to said printed circuit board and relay within said switch box by said wires, said sensors having bottom ends submerged within said water of said tank, wherein said sensor holder is securely mounted to said top edge of said tank; and
a power switch coupled to said switch box, and having a standard power cord for powering said system.
2. The water treatment system of claim 1 further comprising two float switches, including an upper and lower switch, wired in series mounted to an adjustable water level sensor holder for detecting low water levels within the tank, wherein the lower switch is mountable lower than the higher switch within the tank.
3. The water treatment system of claim 1 wherein the water level sensors are from the group consisting of liquid point level detection, continuous level monitoring, including magnetic and mechanical float level sensors, pneumatic level sensors, electrode based level sensors, capacitance level sensors, optical interface point level sensors, ultrasonic sensors, radar level sensors, magnetostrictive level sensors, resistive chain level sensors, hydrostatic pressure level sensors, and air bubbler level measurement systems.
4. The water treatment system of claim 1 wherein said aquarium is a marine reef aquarium.
3. The water treatment system of claim 1 wherein said calcium solution reservoir and alkalinity solution reservoir is stored beneath said aquarium.
4. The water treatment system of claim 1 wherein said first and second pumps are submersible.
5. The water treatment system of claim 1 wherein said first and second pumps are external water pumps.
6. A water treatment system for automatically replenishing a water level within an aquarium the steps comprising:
i) providing the system of claim 1;
ii) detecting a drop in water level below a predetermined level by said water level sensors;
iii) triggering the relay to actuate the power of the first pump;
iv) pumping fresh water from the calcium solution reservoir into the tank by the first pump;
v) detecting a full tank by water level sensors and triggering the relay;
vi) turning the first pump off;
vii) detecting a drop in water level below a predetermined level by said water level sensors;
viii) triggering the relay to actuate the power of the second pump;
ix) pumping fresh water from the alkalinity solution reservoir into the tank by the second pump;
x) detecting a full tank by water level sensors and triggering the relay; and
xi) turning the second pump off.
7. The water treatment system for automatically replenishing a water level within an aquarium further comprising repeating steps ii) through xi).
8. A water treatment system for automatically replenishing a water level within an aquarium the steps comprising:
i) providing the system of claim 1;
ii) detecting a drop in water level below a predetermined level; and
iii) replenishing water into the tank by alternating between said calcium solution reservoir to said alkalinity solution reservoir by said solid state relay.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An integrated device, comprising:
a semiconductor substrate having at least one first portion of at least one microfluidic system, and a second portion for the integration of an additional circuitry;
wherein said microfluidic system includes at least one cavity realized in a containment layer of said integrated device and closed on top by at least one portion of a polysilicon layer, said polysilicon layer being a thin layer that is also disposed over said additional circuitry, said closing portion of said cavity realizing a piezoresistive membrane for said microfluidic system.
2. Integrated device according to claim 1, further comprising a contact, realized in correspondence with at least one active area, realized in said thin polysilicon layer in said first portion, said contact being suitable for controlling said covering portion of said cavity as piezoresistive membranes of said microfluidic system.
3. Integrated device according to claim 2, wherein said additional circuitry is realized by means of thin film technology and comprises said thin polysilicon layer.
4. Integrated device according to claim 3, wherein said additional circuitry comprises at least one thin film transistor including at least one circuitry active area realized in a second portion of said thin polysilicon layer in correspondence with said second portion and contacted by means of a first circuitry contact, while a second circuitry contact is realized in correspondence with a non active area of said second portion, said first circuitry contact being a sourcedrain contact and said second circuitry contact being a gate contact of said thin film transistor.
5. Integrated device according to claim 3, wherein said cavity is realized in a first oxide layer realized above said semiconductor substrate.
6. Integrated device according to claim 5, wherein said first oxide layer comprises at least one portion of greater thickness with respect to the rest of the layer and in that said cavity is realized in said portion of greater thickness.
7. Integrated device according to claim 6, wherein said first oxide layer has a step in correspondence with said portion of greater thickness, in superelevated position with respect to an upper surface level of said second circuitry portion.
8. Integrated device according to claim 6, wherein said first oxide layer has a lowered portion in correspondence with said first portion for realizing said portion of greater thickness.
9. Integrated device according to claim 3, wherein said cavity is realized in said semiconductor substrate and is closed on top by a first oxide layer.
10. Integrated device according to claim 9, further comprising at least one first, one second and one third portion of said thin polysilicon layer realized above said first oxide layer in correspondence with said cavity and separated from each other by at least one first and one second opening for realizing a piezoresistive membrane provided with microfluidic openings for said microfluidic system.
11. Integrated device according to claim 9, wherein said cavity comprises a trench structure.
12. Integrated device according to claim 11, wherein said trench structure comprises a covering oxide layer that covers side walls and a bottom of said trench.
13. Integrated device according to claim 5, further comprising a second oxide layer realized above said thin polysilicon layer and above said first oxide layer on the whole integrated device.
14. Integrated device according to claim 13, further comprising, above said semiconductor substrate and below said first oxide layer, a doped silicon layer.
15. Integrated device according to claim 14, wherein said doped silicon layer extends at least in correspondence with said first portion.
16. Integrated device according to claim 14, wherein said doped silicon layer extends above said semiconductor substrate in correspondence with said first portion and with said second portion.
17. Integrated device according to claim 14, further comprising a substrate contact.
18. Integrated device according to claim 17, wherein said substrate contact is realized in correspondence with a suitable opening in contact with said doped silicon layer.
19. Integrated device according to claim 17, wherein said substrate contact is realized on the back of the device itself, directly in contact with said semiconductor substrate.
20. Integrated device according to claim 1, wherein said microfluidic system realizes one among a sensor, a tank for fluids, and a microchannel for fluids.
21. An apparatus, comprising:
a semiconductor;
a first section of the semiconductor including,
a cavity having an opening, and
a first piezo-resistive semiconductor layer disposed over the opening; and
a second section of the semiconductor including
a second semiconductor layer, and
a circuit component disposed in the second semiconductor layer.
22. The apparatus of claim 21 wherein the first and second semiconductor layers form respective portions of a same semiconductor layer.
23. The apparatus of claim 21 wherein:
the first section includes an insulator layer; and
the cavity is disposed in the insulator layer.
24. The apparatus of claim 21 wherein:
the second section includes an insulator layer; and
the circuit component is disposed over the insulator layer.
25. The apparatus of claim 21 wherein:
the first section includes a first insulator layer;
the cavity is disposed in the first insulator layer;
the second section includes a second insulator layer; and
the circuit component is disposed over the second insulator layer.
26. The apparatus of claim 25 wherein the first and second insulator layers form respective portions of a same insulator layer.
27. The apparatus of claim 25, further comprising:
a substrate having a surface;
wherein the first and second insulator layers are disposed over the surface of the substrate; and
wherein the first insulator layer extends a higher above the surface of substrate than the second insulator layer extends.
28. The apparatus of claim 25, further comprising:
a substrate having a first surface at a first level and a second surface at a second level; and
wherein the first and second insulator layers are respectively disposed over the first and second surfaces of the substrate.
29. The apparatus of claim 28 wherein the first level is lower than the second level.
30. The apparatus of claim 28 wherein the first level is higher than the second level.
31. The apparatus of claim 25, further comprising:
a substrate having a surface;
wherein the first and second insulator layers are disposed over the surface of the substrate; and
a third semiconductor layer disposed between the substrate and the first insulator layer.
32. The apparatus of claim 31 wherein the third semiconductor layer is disposed between the substrate and the second insulator.
33. The apparatus of claim 31, further comprising an electrical contact coupled to the third semiconductor layer.
34. The apparatus of claim 21, further comprising:
a substrate;
wherein the cavity is disposed in the substrate; and
wherein the circuit component is disposed over the substrate.
35. The apparatus of claim 21, further comprising:
a substrate;
wherein the cavity includes an insulator-lined trench disposed in the substrate; and
wherein the circuit component is disposed over the substrate.
36. The apparatus of claim 21 wherein the first semiconductor layer includes a piezo-resistive material.
37. The apparatus of claim 21, further comprising a micro-fluidic opening in the first semiconductor layer over the cavity opening.
38. The apparatus of claim 21 wherein the first section includes an insulator layer disposed over the first semiconductor layer.
39. The apparatus of claim 21 wherein the second section includes an insulator layer disposed over the second semiconductor layer.
40. The apparatus of claim 21, further comprising an insulator layer disposed over the first and second semiconductor layers.
41. The apparatus of claim 21 wherein the circuit component comprises a thin-film transistor.
42. A system, comprising:
a first integrated circuit, including
a first section including,
a cavity having an opening, and
a first piezo-resistive semiconductor layer disposed over the opening; and
a second section including
a second semiconductor layer, and
a circuit component disposed in the second semiconductor layer; and
a second integrated circuit coupled to the first integrated circuit.
43. The system of claim 42 wherein the first and second integrated circuits are disposed on a same die.
44. A system, comprising:
a first integrated circuit, including
a first section including,
a cavity having an opening, and
a first semiconductor layer disposed over the opening; and
a second section including
a second semiconductor layer, and
a circuit component disposed in the second semiconductor layer; and
a second integrated circuit coupled to the first integrated circuit;
wherein the first and second integrated circuits are disposed on respective dies.
45. The system of claim 42 wherein one of the first and second integrated circuits comprises a controller.
46. The system of claim 42 wherein the first integrated circuit comprises a fluid analyzer.