1. A semiconductor memory device comprising:
a source strobe signal generating unit configured to generate a source strobe signal having a first or a second activation width corresponding to a normal mode and a bank grouping mode;
a final strobe signal generating unit configured to, in the normal mode, expand the first activation width and generate a final strobe signal having the expanded first activation width, and in the bank grouping mode, maintain the second activation width and generate the final strobe signal having the second activation width; and
a sense amplifying unit configured to sense, amplify and output data applied through a data line in response to the final strobe signal.
2. The semiconductor memory device as recited in claim 1, further comprising a driving unit that drives a global data line in response to an output signal of the sensing amplifying unit.
3. The semiconductor memory device as recited in claim 1, wherein the second activation width is wider than the first activation width.
4. The semiconductor memory device as recited in claim 1, wherein an activation width of the final strobe signal is shorter than a minimum separation time between a column command and a following column command.
5. The semiconductor memory device as recited in claim 1, wherein the final strobe signal generating unit includes:
an expanding unit configured to expand an activation width of the source strobe signal to generate an expanded output signal; and
a multiplexing unit configured to output a source strobe signal or the expanded output signal of the expanding unit as the final strobe signal in response to the bank grouping mode.
6. The semiconductor memory device as recited in claim 5, wherein the expanding unit expands a deactivation time of the source strobe signal.
7. The semiconductor memory device as recited in claim 5, wherein the expanding unit includes:
a first driving unit configured to be driven corresponding to an activation edge of the source strobe signal; and
a second driving unit configured to be driven corresponding to a deactivation edge of the source strobe signal,
wherein a loading value of the first driving unit is smaller than a loading value of the second driving unit.
8. A method for driving a semiconductor memory device, comprising:
expanding an activation width of a source strobe signal having a first activation width corresponding to a normal mode and outputting the source strobe signal having an expanded first activation width as a final strobe signal;
maintaining a second activation width of the source strobe signal corresponding to a bank grouping mode and outputting the source strobe signal having the second activation width as the final strobe signal; and
sensing, amplifying and outputting data in response to the final strobe signal.
9. The method as recited in claim 8, further comprising: generating the source strobe signal having the first activation width corresponding to the normal mode; and
generating the source strobe signal having the second activation width corresponding to the bank grouping mode.
10. The method as recited in claim 8, wherein the second activation width is wider than the first activation width.
11. The method as recited in claim 8, wherein an activation width of the final strobe signal is shorter than a minimum separation time between a column command and a following column command.
12. The method as recited in claim 8, wherein the step of generating the final strobe signal includes:
expanding the activation width of the source strobe signal;
and selectively outputting the source strobe signal or the expanded source strobe signal as the final strobe signal in response to the bank grouping mode.
13. The method as recited in claim 12, wherein the expansion of the activation width of the source strobe signal is acquired by expanding a deactivation time of the source strobe signal.
14. A data sense amplifying circuit comprising:
a pulse width expansion unit configured to generate an inputoutput sense amplifying strobe signal by expanding an activation width of a received main strobe signal; and
a sense amplifying unit configured to amplify and output the data applied to a local data line in response to the inputoutput sense amplifying strobe signal.
15. The data sense amplifying circuit as recited in claim 14, wherein the pulse width expansion unit expands a deactivation time of the main strobe signal.
16. The data sense amplifying circuit as recited in claim 14, wherein an activation width of the inputoutput sense amplifying strobe signal is shorter than a minimum separation time between a column command and a following column command.
17. The data sense amplifying circuit as recited in claim 14, wherein the pulse width expansion unit includes:
a first driving unit configured to be driven corresponding to an activation edge of the main strobe signal; and
a second driving unit configured to be driven corresponding to a deactivation edge of the main strobe signal,
wherein a loading value of the first driving unit is smaller than a loading value of the second driving unit.
18. A semiconductor memory device comprising:
a source strobe signal generating unit configured to generate a source strobe signal having a first pulse width in response to a read command;
a final strobe signal generating unit configured to, during the normal mode, generate a final strobe signal having the first activation pulse width, and during the bank grouping mode, expand the first activation pulse width and generate the final strobe signal having the expanded activation pulse width; and
a sense amplifying unit configured to sense, amplify and output data applied through a data line in response to the final strobe signal.
19. The semiconductor memory device as recited in claim 18, further comprising a driving unit that drives a global data line in response to an output signal of the sensing amplifying unit.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductive rubber composition containing:
a rubber content containing at least copolymer rubber containing ethylene oxide as a copolymeric component and chloroprene rubber; and
not less than 0.5 parts by mass and not more than 1.5 parts by mass of a thiourea-based vulcanization accelerator, not less than 0.5 parts by mass and not more than 1.5 parts by mass of a guanidine-based vulcanization accelerator and not less than 0.5 parts by mass and not more than 2.0 parts by mass of a peroxide-based crosslinking agent with respect to 100 parts by mass of the sum of the rubber content.
2. The semiconductive rubber composition according to claim 1, wherein
the copolymer rubber is at least one type selected from the group consisting of epichlorohydrin-ethylene oxide copolymer rubber and epichlorohydrin-ethylene oxide-allyl glycidyl ether copolymer rubber.
3. The semiconductive rubber composition according to claim 1, wherein
the rubber content also contains acrylonitrile-butadiene copolymer rubber.
4. A semiconductive rubber roller made of a semiconductive rubber composition containing:
a rubber content containing at least copolymer rubber containing ethylene oxide as a copolymeric component and chloroprene rubber; and
not less than 0.5 parts by mass and not more than 1.5 parts by mass of a thiourea-based vulcanization accelerator, not less than 0.5 parts by mass and not more than 1.5 parts by mass of a guanidine-based vulcanization accelerator and not less than 0.5 parts by mass and not more than 2.0 parts by mass of a peroxide-based crosslinking agent with respect to 100 parts by mass of the sum of the rubber content.
5. The semiconductive rubber roller according to claim 4, wherein
the copolymer rubber is at least one type selected from the group consisting of epichlorohydrin-ethylene oxide copolymer rubber and epichlorohydrin-ethylene oxide-allyl glycidyl ether copolymer rubber.
6. The semiconductive rubber roller according to claim 4, wherein
the rubber content also contains acrylonitrile-butadiene copolymer rubber.