1. A method for producing a III-V group compound semiconductor layer, comprising the steps of:
forming a first III-V group compound semiconductor layer on a substrate in a reaction chamber; and
supplying a III group material gas to the reaction chamber before and after the step of forming the first III-V group compound semiconductor layer to prevent re-evaporation of the III group gas in the reaction chamber wherein the III group material gas is supplied when a substrate temperature becomes a preferable temperature or higher.
2. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the step of supplying the III group material gas includes a step of forming a first transition III-V group compound semiconductor layer by supplying the III group material gas.
3. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the step of forming the first III-V group compound semiconductor layer includes a step of forming the first III-V group compound semiconductor layer at a first substrate temperature.
4. A method for producing a III-V group compound semiconductor layer according to claim 3, further comprising a step of forming a second III-V group compound semiconductor layer at a second substrate temperature in the reaction chamber,
wherein the step of supplying the III group material gas includes a step of supplying the III group material gas while the substrate temperature changes from the first substrate temperature to the second substrate temperature.
5. A method for producing a III-V group compound semiconductor layer according to claim 4, wherein the step of supplying the III group material gas includes a step of supplying a V group material gas with the III group material gas while the substrate temperature changes from the first substrate temperature to the second substrate temperature.
6. A method for producing a III-V group compound semiconductor layer according to claim 4, wherein the step of forming the second III-V group compound semiconductor layer includes a step of forming a second III-V group compound semiconductor layer using the III group material gas after stopping the III group material gas for 10 seconds or shorter.
7. A method for producing a III-V group compound semiconductor layer according to claim 4, wherein:
the substrate is a GaAs substrate;
the step of forming the first III-V group compound semiconductor layer includes a step of forming a first GaAs buffer layer at the first substrate temperature on the GaAs substrate;
the step of forming the second III-V group compound semiconductor layer includes a step of forming a second GaAs buffer layer at the second substrate temperature; and
the step of supplying the III group material gas includes a step of supplying the III group material gas while the substrate temperature changes from the first substrate temperature to the second substrate temperature.
8. A method for producing a III-V group compound semiconductor layer according to claim 7, wherein the step of supplying the III group material gas includes a step of supplying a III group material gas used in at least one of the steps of forming the first GaAs buffer layer and the step of forming the second GaAs buffer layer as the III group material gas.
9. A method for producing a III-V group compound semiconductor layer according to claim 7, further comprising a step of forming a third III-V group compound semiconductor layer at a substrate temperature higher than at least one of the first substrate temperature and the second substrate temperature in the reaction chamber.
10. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the preferable temperature is a substrate temperature at which crystal defects including crystal defects due to re-evaporation of reaction products produced in the reaction chamber and crystal defects due to insufficiency of migration are minimal.
11. A method for producing a III-V group compound semiconductor layer according to claim 10, wherein the step of supplying the III group material gas includes a step of supplying the III group material gas when the substrate temperature becomes the preferable temperature or higher before the step of forming the first III-V group compound semiconductor layer is finished.
12. A method for producing a III-V group compound semiconductor layer according to claim 10, wherein the step of supplying the III group material gas includes a step of supplying the III group material gas when the substrate temperature becomes the preferable temperature or higher while the substrate temperature increases to a first substrate temperature before the step of forming the first III-V group compound semiconductor layer.
13. A method for producing a III-V group compound semiconductor layer according to claim 12, wherein the step of supplying the III group material gas includes a step of supplying a V group material gas with the III group material gas when the substrate temperature becomes the preferable temperature or higher while the substrate temperature increases to the first substrate temperature.
14. A method for producing a III-V group compound semiconductor layer according to claim 10, wherein:
the substrate is a GaAs substrate;
the step of forming the first III-V group compound semiconductor layer includes a step of forming a GaAs buffer layer on the GaAs substrate at a first substrate temperature;
the step of supplying the III group material gas includes a step of supplying the III group material gas when the substrate temperature becomes the preferable temperature or higher while the substrate temperature increases to the first substrate temperature.
15. A method for producing a III-V group compound semiconductor layer according to claim 14, wherein the step of supplying the III group material gas includes a step of supplying a III group material gas used in the step of forming the GaAs buffer layer as the III group material gas.
16. A method for producing a III-V group compound semiconductor layer according to claim 14, further comprising a step of forming an (AlxGa1-x)yIn1-yP layer (0\u2266x<1, 0\u2266y<1) on the GaAs buffer layer.
17. A method for producing a III-V group compound semiconductor layer according to claim 16, wherein:
the step of forming the GaAs buffer layer includes a step of forming the GaAs buffer layer at the first substrate temperature using a first V group material gas; and
the step of forming the (AlxGa1-x)yIn1-yP layer (0x\u22661, 0\u2266y<1) includes a step of for (AlxGa1-x)yIn1-yP layer (0\u2266x\u22661, 0y<1) at a second substrate temperature using a second V material gas,
further comprising a step of switching the first V group material gas to the second V group material gas at a substrate temperature lower than the second substrate temperature.
18. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the first III-V group compound semiconductor layer includes at least one of In and As.
19. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the step of forming the first III-V group compound semiconductor layer includes a step of forming the first III-V group compound semiconductor layer using a metal organic chemical vapor deposition.
20. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the preferable temperature is 600\xb0 C.
21. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the preferable temperature is 630\xb0 C.
22. A method for producing a semiconductor light-emitting element comprising:
a step of producing a III-V group compound semiconductor layer; and
a step of forming a semiconductor light-emitting element using the III-V group compound semiconductor layer, wherein:
the step of producing the III-V group compound semiconductor layer includes the steps of:
forming a III-V group compound semiconductor layer on a substrate in a reaction chamber; and
supplying a III group material gas to the reaction chamber before and after the step of forming the III-V group compound semiconductor layer to prevent re-evaporation of the III group gas in the reaction chamber wherein the III group material gas is supplied when a substrate temperature becomes a preferable temperature or higher.
23. A method for producing a semiconductor light-emitting element according to claim 22, wherein the step of forming the semiconductor light-emitting element includes a step of forming a semiconductor light-emitting diode or a semiconductor laser.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An image recording apparatus comprising:
a transport unit which transports a medium with a joint portion along a transport path;
a head unit which performs recording of a printing image on both the joint portion and a non-joint portion by ejecting liquid onto the medium;
a heating unit which dries liquid forming the printing image by heating a portion of the medium located at a heating region on the transport path;
a detection unit which detects the joint portion; and
a controller which controls transporting of the medium by the transport unit so that a heating time of the joint portion in the heating region becomes longer than a heating time of the non-joint portion in the heating region on the basis of a detection signal from the detection unit;
wherein the transport unit intermittently transports the medium in the transport direction, and the heating unit heats the joint portion when the joint portion is located at the heating region at the time of moving and stopping the medium,
wherein the head unit performs printing operation by ejecting liquid onto a portion of the medium which is located at an image recording region on the transport path by performing a plurality of reciprocations along the transport direction while the heating unit is heating the joint portion which is located at the heating region when the medium is stopped,
wherein the heating unit continuously heats the joint portion for a predetermined time even after the printing operation is completed, and then the transport unit restarts transporting of the medium thereafter, and
wherein the controller changes the predetermined time according to the number of reciprocations.
2. The image recording apparatus according to claim 1,
wherein the joint portion includes a material which is different from that of the non-joint portion, and is a film.
3. An image recording method comprising:
preparing for an image recording apparatus including a transport unit which transports a medium with a joint portion along a transport direction, a head unit which records a printing image on both the joint portion and a non-joint portion by ejecting liquid onto the medium, a heating unit which dry liquid forming the printing image by heating a portion of the medium which is located at a heating region on the transport path, a detection unit which detects the joint portion, and a controller; and
controlling transporting of the medium by the transport unit so that a heating time of the joint portion in the heating region becomes longer than a heating time of the non-joint portion in the heating region on the basis of a detection signal from the detection unit;
wherein the transport unit intermittently transports the medium in the transport direction, and the heating unit heats the joint portion when the joint portion is located at the heating region at the time of moving and stopping the medium,
wherein the head unit performs printing operation by ejecting liquid onto a portion of the medium which is located at an image recording region on the transport path by performing a plurality of reciprocations along the transport direction while the heating unit is heating the joint portion which is located at the heating region when the medium is stopped,
wherein the heating unit continuously heats the joint portion for a predetermined time even after the printing operation is completed, and then the transport unit restarts transporting of the medium thereafter, and
controlling changes to the predetermined time according to the number of reciprocations.
4. The image recording method according to claim 3,
wherein the joint portion includes a material which is different from that of the non-joint portion, and prepares for a medium of which the material is film.