1461173606-b9eae333-9f09-4671-bef3-7a8ac433bb69

1. A semiconductor light-emitting device comprising:
a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order;
a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and
a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter,
wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.
2. The semiconductor light-emitting device according to claim 1, wherein
the filter is formed by laminating (2n+1)2 (n is an integer of 1 or more) pairs of a low refractive index layer and a high refractive index layer.
3. The semiconductor light-emitting device according to claim 1, wherein
the semiconductor light-emitting element further includes a contact layer between the second conductive type semiconductor layer and the filter.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for forming a porous PTFE layer, comprising the steps of:
(1) combining one or at least two unburned porous PTFE films and a plate shaped support body that can withstand a heating condition in the following process (2) by disposing the PTFE film on one face of the plate shaped support body and partially press-bonding the PTFE film and the support body to each other; and
(2) heating the matter resulted from the above process (1) at a temperature of at least 150\xb0 C. and less than the melting point of the PTFE film for the range of 5 to 120 minutes.
2. A method for forming a porous PTFE layer comprising the steps of:
(1) combining at least two unburned porous polytetrafluoroethylene (PTFE) films and a plate shaped support body that can withstand a heating condition in the following process (2) by disposing the PTFE film on one face of the plate shaped support body and bending a peripheral section having a width of at least 1 cm in the PTFE film to the rear side of the support body; and
(2) heating the matter resulted from the above process (1) at a temperature less than the melting point of the PTFE film;
wherein the at least two unburned porous PTFE films are bonded to each other by using a binder resin in advance, and the heating treatment in the process (2) is carried out at a temperature in the range of the melting point of the used binder resin to 320\xb0 C. for the range of 10 to 60 minutes.
3. A method for forming a porous PTFE layer, comprising the steps of:
(1) combining one or at least two unburned porous PTFE films and a plate shaped support body that can withstand a heating condition in the following process (2) by disposing the PTFE film on one face of the plate shaped support body and bonding a part of the PTFE film and the plate shaped support body to each other using a binder resin; and
carrying out the heating treatment in the process (2) at a temperature in the range of the melting point of the used binder resin to 320\xb0 C. for the range of 10 to 60 minutes.
4. A method for forming a porous PTFE layer, comprising the steps of:
(1) combining one or at least two unburned porous PTFE films and a rod shaped support body that can withstand a heating condition in the following process (2) by winding the PTFE film in a spiral shape around the rod shaped support body more than one time; and
(2) heating the matter resulted from the above process (1) at a temperature of at least 150\xb0 C. and less than the melting point of the PTFE film for the range of 5 to 120 minutes.
5. The method for forming a porous PTFE layer as defined in claim 4, wherein the at least two unburned porous PTFE films are sewn to each other by using a thermoplastic resin fiber or the PTFE films are bonded to each other by using a binder resin in advance, and the heating treatment in the process (2) is carried out at a temperature in the range of the melting point of the used resin fiber or the used binder resin to 320\xb0 C. for the range of 10 to 60 minutes.
6. A method for forming a porous PTFE layer, comprising the steps of:
(1) winding one or at least two unburned porous PTFE films around a rod shaped support body that can withstand a heating condition in the following process (2) and combining the PTFE film and the rod shaped support body by sewing the PTFE film and the rod shaped support body to each other using a thermoplastic resin fiber or by bonding the PTFE film and the rod shaped support body to each other using a binder resin; and
carrying out the heating treatment in the process (2) at a temperature in the range of the melting point of the used resin fiber or the used binder resin to 320\xb0 C. for the range of 10 to 60 minutes.
7. The method for forming a porous PTFE layer as defined in claim 2 or 3, wherein the binder resin is a binder resin containing tetrafluoroethylene hexafluoropropylene copolymer (FEP), or tetrafluoroethylene perfluoro alkoxyethylene copolymer (PFA), and the heating treatment in the process (2) is carried out at a temperature in the range of 200\xb0 to 320\xb0 C. for the range of 10 to 60 minutes.
8. The method for forming a porous PTFE layer as defined in claim 2 or 3, wherein the plate shaped body is made of a mesh, a non-woven fiber, a braided rope, or a woven fabric.
9. A PTFE layer, wherein the PTFE layer is obtained by the method as defined in claim 2 or 3.
10. A molded product comprising a support body and a porous PTFE layer formed on the surface of the support body, wherein the molded product is obtained by the method as defined in claim 2 or 3.