What is claimed is:
1. A method for forming a prosthesis comprising:
forming a first tube;
forming a second tube;
twisting said second tube into a helical configuration;
maintaining said second tube in said helical configuration;
coaxially disposing said second tube relative to said first tube; and,
fixing said second tube to said first tube.
2. A method as in claim 1, wherein said first tube includes ePTFE.
3. A method as in claim 2, wherein said second tube includes ePTFE.
4. A method as in claim 1, wherein said fixing includes sintering.
5. A method as in claim 1, wherein said fixing includes bonding.
6. A method as in claim 1, further comprising twisting said first tube in a helical configuration in a rotational direction different from said helical configuration of said second tube.
7. A method as in claim 1, further comprising coaxially disposing a radially-expandable support member relative to said first tube or said second tube.
8. A method as in claim 1, further comprising coaxially disposing a radially-expandable support member relative to said fixed first and second tubes.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A casting device for producing semiconductor material foil, comprising a casting frame and a substrate band, the casting frame being arranged for holding a molten semiconductor material and comprising sidewalls of which an exit sidewall is located at an output position for the semiconductor material foil, the exit side wall being provided with an exit slit, wherein the casting device further comprises a local force exerting means to exert at the location of the exit slit a local relatively enlarged external force on the molten semiconductor material to enlarge locally an outer pressure on the molten semiconductor material at the exit slit.
2. The casting device according to claim 1, wherein the force exerting means comprises a gas jet generator for producing a gas jet with relatively high pressure compared to the ambient pressure at the location of the exit slit; the gas jet generator being arranged for directing the gas jet towards the exit slit.
3. The casting device according to claim 2, wherein the gas jet generator comprises an inlet for pressurized gas, a duct and an outlet for producing the gas jet; the inlet being connected to the duct and the duct being connected to the outlet.
4. The casting device according to claim 1, wherein the force exerting means comprises an overpressure device; the overpressure device being arranged at the exit sidewall of the casting device and is adapted for producing at the location of the exit slit an overpressure relative to the outer pressure.
5. The casting device according to claim 4, wherein the overpressure device comprises an inlet for pressurized gas, a pressure leveling chamber, and an overpressure chamber; the inlet being connected with an entrance of the pressure leveling chamber, an exit of the pressure leveling chamber being in communication with the overpressure chamber, the overpressure chamber being located at the exit slit of the casting frame.
6. The casting device according to claim 5, wherein the pressure leveling chamber extends along the width of the exit side wall and is adapted for leveling the pressure of the gas along the width of the exit side wall and the overpressure chamber extends substantially along the full width of the exit slit.
7. The casting device according to claim 6, wherein the pressure leveling chamber is connected to the overpressure chamber over the full width of the side wall so as to create a substantially constant pressure in the overpressure chamber over the full width of the exit slit.
8. The casting device according to claim 5, wherein the overpressure device comprises a second pressure leveling chamber arranged in between the pressure leveling chamber and the overpressure chamber; the pressure leveling chamber being connected to the second pressure leveling chamber and the second pressure leveling chamber being connected to the overpressure chamber.
9. The casting device according to claim 1, comprising a conductive coil as force exerting means, the conductive coil being located asymmetrically around the casting frame and being adapted for conducting an alternating electric current, wherein the conductive coil is adapted as force exerting means by inducing currents in the molten semiconductor material for causing an electromagnetic force in the molten semiconductor material.
10. The casting device according to claim 9, wherein the conductive coil and the casting frame are arranged for causing the electromagnetic force to produce an additional pressure at the location of the exit slit to enlarge the outer pressure.
11. The casting device according to claim 10, wherein the conductive coil comprises one or more windings, the windings being oriented in an oblique manner, the windings at the side of the exit side wall being positioned at relative closer distance to the substrate band than the windings at the opposite side wall that are positioned at relative larger distance from the substrate band.
12. The casting device according to claim 10, wherein the conducting coil comprises one or more windings, wherein the windings at the side of the exit side wall are positioned at relative closer horizontal distance along the substrate band to the exit side wall than the windings at the opposite side wall that are positioned at relative larger horizontal distance from the opposite side wall.
13. The casting device according to claim 9, wherein the alternating electric current is a high frequency current and has a frequency between about 2 kHz and about 50 kHz.
14. The casting device according to claim 9 wherein the conductive coil is additionally adapted for heating of molten semiconductor material by the inducted currents in the semiconductor material.
15. The casting device according to claim 14, wherein the casting device further comprises a secondary heating system for heating the molten semiconductor material.
16. The casting device according to claim 15, wherein the secondary heating system is a system for radiative heating.
17. The casting device according to claim 1, wherein the exit side wall at the exit slit comprises a knife edge end beveled on the inner side of the side wall.
18. The casting device according to claim 1, comprising a flow restriction wall, the flow restriction wall being attached to the lower end of the exit side wall proximate to the substrate band; the flow restriction wall being adapted to extend the length of the exit side wall in the moving direction of the substrate band.
19. A method for casting semiconductor foil, said method comprising
pouring molten semiconductor material into a casting frame, the casting frame comprising sidewalls of which an exit sidewall is located at an output position for the semiconductor material foil, the exit side wall being arranged with an exit slit;
setting up a substrate band to pass underneath the casting frame at a specific speed for producing the semiconductor foil on a downstream side of the casting frame;
exerting at the location of the exit slit a locally relatively enlarged external force on the molten semiconductor material to enlarge an outer pressure on the molten semiconductor material at the exit slit.
20. Semiconductor material foil, produced by a method according to claim 19.
21. Semiconductor material foil produced with a casting device according to claim 1.