1. A capsule for the preparation of a beverage in a beverage machine comprising:
a brewing enclosure comprising at least one beverage ingredient;
filtering means defining at least one filtering side of the brewing enclosure;
beverage flow guiding means for guiding the beverage to a beverage outlet of the capsule;
a shell and a protective cover attached to the shell and forming with the shell a gas tight container for the beverage ingredients;
an overflow wall that is located in a path of a brewed liquid after the filtering means and comprises at least one overflow aperture;
perforation means comprising an opening element designed to open the gas-tight container in order to create the beverage outlet, wherein the opening element is a perforating element for perforating an outlet in a wall of the container; and
the gas tight container integrally housing the beverage flow guiding means and the opening element.
2. Capsule according to claim 1, wherein the opening element is a perforating element for perforating an outlet in a wall of the container.
3. The capsule according to claim 1, wherein the perforating element has a generally elongated shape with two opposing ends, and the perforating element is so constructed and arranged to be moveable from a starting position to an in use position when a mechanical pressure is applied onto a first opposing end, the second opposing end being configured to pierce the protective cover when the perforating element is moved into the in use position.
4. The capsule according to claim 3 wherein the second opposing end comprises a piercing point that faces a perforable zone of the cover when the perforating element is in the starting position.
5. The capsule according to claim 1, wherein the overflow wall and the cover face each other, and a portion of at least the side of the overflow wall facing the cover is designed to support the cover.
6. The capsule according to claim 5 wherein the beverage flow guiding means comprise a beverage flow channel located on the side of the overflow wall facing the cover and connects at least one overflow aperture with the beverage outlet.
7. The capsule according to claim 6 comprising a groove formed in a side of the overflow wall facing the cover that is designed to house the perforating element, and a downstream portion, at least, of the beverage flow channel extends along said groove.
8. The capsule according to claim 7 wherein an upstream portion of the beverage channel is separate from the groove and is designed so as to avoid contact between the beverage and the first opposing end of the perforating element.
9. Capsule according to claim 6 wherein the beverage channel extends along the whole length of the groove, and the first opposing end of the perforating element fans out to form a flattened zone that faces a plurality of overflow apertures.
10. The capsule according to claim 1 wherein, in a starting position, the opening element is flush with the face of the overflow wall.
11. Capsule according to claim 3 wherein the opening element is designed to pivot so that pressure applied onto the first opposing end, through the cover, causes the second opposing end to swing towards the cover.
12. Capsule according to claim 11, wherein the opening element is designed to pivot around a transversal axle that is integral with the perforating element.
13. The capsule according to claim 3 wherein the perforating element is designed to function like a ram, pressure applied onto the first opposing end causing the perforating element to slide longitudinally into the in use position, with the second opposing end extending out of the cover.
14. Capsule according to claim 13, wherein the perforating element is housed in a curved groove facing the cover and extending from a front side to the top side of the capsule, and the perforating element comprises a flexible portion designed to allow the perforating element to move along the groove from the starting position to the in use position.
15. Capsule according to claim 14 wherein the first opposing end is designed to be moved by an external mechanical pusher, and a portion of the cover, between the mechanical pusher and the first opposing end, is designed to be pierced by the mechanical pusher.
16. Capsule according to claim 15 comprising a hot water inlet located at the bottom of a portion of the groove, the inlet being covered by the first opposing end when the perforating element is in the starting position, and being uncovered when the perforating element in the in use position.
17. Capsule according to claim 16 wherein it is supplied with hot water through the portion of the cover pierced by the mechanical pusher and through the hot water inlet.
18. Capsule according to claim 17 wherein the perforating element comprises sealing means located near the first opposing end, the sealing means being designed to prevent hot water supplied through the portion of the cover pierced by the mechanical pusher to escape along the groove instead of flowing through the hot water inlet.
19. A capsule for use in a beverage making machine comprising:
a brewing enclosure containing beverage ingredients;
a filter defining at least one filtering side of the brewing enclosure;
beverage flow guide that guides the beverage to a beverage outlet of the capsule;
a shell and a protective cover defining a container;
an overflow wall that is located in a path of the brewed liquid and which comprises at least one overflow aperture;
an opening element designed to open the container and create the beverage outlet, wherein the opening element is a perforating element for perforating an outlet in a wall of the container; and
the container housing the beverage flow guide and the opening element.
20. The capsule according to claim 1, wherein the perforating element is adapted to create the outlet by breaking a seal between two sealed walls of the container.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device, comprising:
a dielectric layer comprising oxide; and
a dielectric film over the dielectric layer, the dielectric film comprising a crystalline structure comprising a substantially uniform composition of zirconium, nitrogen and oxygen.
2. The semiconductor device of claim 1, the dielectric layer having a dielectric layer thickness between about 5 \u212b to about 15 \u212b.
3. The semiconductor device of claim 1, the dielectric layer comprising silicon.
4. The semiconductor device of claim 1, comprising:
a gate electrode; and
a gate dielectric under the gate electrode, the gate dielectric comprising the dielectric layer and the dielectric film.
5. The semiconductor device of claim 1, the dielectric film comprising between about 20% to about 40% zirconium.
6. The semiconductor device of claim 1, the dielectric film comprising between about 25% to about 75% oxygen.
7. The semiconductor device of claim 1, the dielectric film comprising between about 5% to about 35% nitrogen.
8. The semiconductor device of claim 1, the dielectric film having a dielectric film thickness between about 25 \u212b to about 75 \u212b.
9. A method of forming a semiconductor device comprising at least one of:
a first cycle, the first cycle comprising:
forming a first zirconium layer over a dielectric layer of the semiconductor device;
doping the first zirconium layer using nitrogen plasma to generate a first nitrogen doped zirconium layer; and
applying remote oxygen plasma to the first nitrogen doped zirconium layer to generate a first nitrogen doped zirconium oxide layer; or
a second cycle, the second cycle comprising:
applying remote oxygen plasma to the dielectric layer to form a first oxide layer over the dielectric layer;
doping the first oxide layer using the nitrogen plasma to generate a first nitrogen doped oxide layer; and
applying zirconium to the first nitrogen doped oxide layer to generate the first nitrogen doped zirconium oxide layer; and
annealing the semiconductor device to form a dielectric film from the first nitrogen doped zirconium oxide layer, the dielectric film comprising a crystalline structure, the crystalline structure comprising a substantially uniform composition of zirconium, nitrogen and oxygen.
10. The method of claim 9, at least one of:
the forming a first zirconium layer comprising performing a first atomic layer deposition (ALD) of a zirconium precursor, the zirconium precursor comprising Tetrakis-(ethylmethylamino) zirconium (TEMAZ, ZrN(C2H5)CH34); or
the applying zirconium comprising performing a second ALD of the zirconium precursor.
11. The method of claim 10, at least one of the first ALD or the second ALD performed at a first temperature between about 150\xb0 C. to about 350 C.\xb0 and at a first pressure between about 0.05 torr to about 0.5 torr.
12. The method of claim 9, at least one of:
the doping the first zirconium layer comprising in situ doping the first zirconium layer using at least one of N2 plasma or NH3 plasma; or
the doping the first oxide layer comprising in situ doping the first oxide layer using at least one of N2 plasma or NH3 plasma.
13. The method of claim 9, at least one of:
repeating the first cycle; or
repeating the second cycle.
14. The method of claim 9, the annealing comprising annealing at an annealing temperature between about 300\xb0 C. to about 600 C.\xb0 for an annealing duration between about 20 min to about 40 min, in the presence of an annealing gas, the annealing gas comprising at least one of argon, nitrogen, or hydrogen.
15. The method of claim 9, occurring within a chamber, the chamber purged using an inert gas between the forming a first zirconium layer and the doping the first zirconium layer, such that a zirconium precursor is removed from the chamber.
16. A semiconductor device, comprising:
a dielectric layer comprising oxide; and
a dielectric film over the dielectric layer, the dielectric film comprising a crystalline structure comprising a substantially uniform composition comprising between about 20% to about 40% zirconium, between about 25% to about 75% oxygen and between about 5% to about 35% nitrogen.
17. The semiconductor device of claim 16, comprising:
a gate electrode; and
a gate dielectric under the gate electrode, the gate dielectric comprising the dielectric layer and the dielectric film.
18. The semiconductor device of claim 16, the dielectric film having a dielectric film thickness between about 25 \u212b to about 75 \u212b.
19. The semiconductor device of claim 16, the dielectric layer having a dielectric layer thickness between about 5 \u212b to about 15 \u212b.
20. The semiconductor device of claim 16, the dielectric layer comprising silicon.