1461176345-c5c36f4c-947e-4d22-94ba-024766d67ad8

1. A woodworking machine for shaping a molding, comprising:
a frame;
a shuttle mounted on the frame;
a spaced apart pair of robotic grippers mounted on the shuttle, the grippers being adapted for gripping and releasing an elongated blank strip of molding;
a hollow, cylindrical cartridge having opposing end caps, the end caps having openings defined therein dimensioned and configured for supporting the blank strip of molding when the molding is inserted through the cartridge, the cartridge being rotatably mounted on the frame;
a table mounted on the frame, the table being movable both vertically and laterally relative to the cartridge;
a cutter assembly having a plurality of cutters, the cutter assembly being mounted on the table, the table and cutter assembly being movable so that the cutters are positioned to cut through the cartridge and the blank strip of molding when the molding is inserted through the cartridge; and
an electronic control system having means for cyclically actuating the robotic grippers to grip the blank strip of molding, move the shuttle and robotic grippers to advance the molding through the cartridge in indexed increments, actuate the cutter assembly to rotate the cutters, move the table and cutter assembly so that the cutters engage the cartridge and the blank strip of molding within the cartridge to form simultaneous, spaced apart cuts in the blank strip, retract the table and cutter assembly from the cartridge, and repeat the cycle.
2. The woodworking machine as recited in claim 1, further comprising a user interface in electrical communication with said electronic control system.
3. The woodworking machine as recited in claim 1, further comprising a spindle motor for driving the plurality of cutters, the spindle motor being in electrical communication with said electronic control system.
4. The woodworking machine as recited in claim 1, further comprising a pneumatic drive system mounted to said shuttle for driving said spaced apart pair of robotic grippers, the pneumatic drive system being in electrical communication with said electronic control system.
5. The woodworking machine as recited in claim 1, wherein the openings formed through the end caps of the hollow, cylindrical cartridge define an entry opening and an exit opening, the walls of the end cap defining the entry opening being beveled.
6. The woodworking machine as recited in claim 1, further comprising an air bag disposed within said hollow, cylindrical cartridge for releasably securing the blank strip of molding therein.
7. The woodworking machine as recited in claim 6, further comprising means for selectively inflating and deflating the air bag, the means being in electrical communication with said electronic control system.
8. The woodworking machine as recited in claim 7, wherein the means for selectively inflating and deflating the air bag comprises an air compressor and a vacuum pump.
9. The woodworking machine as recited in claim 8, wherein an inlet port is formed through a housing of said hollow, cylindrical cartridge, the inlet port being in fluid communication with the air bag, the air compressor and the vacuum pump.
10. The woodworking machine as recited in claim 1, further comprising a cartridge holder bracket mounted on said frame for releasably and rotatably supporting said cartridge.
11. The woodworking machine as recited in claim 1, wherein spacing between adjacent ones of the plurality of cutters is user-selectable and adjustable.
12. The woodworking machine as recited in claim 1, wherein said cartridge is formed from plastic.
13. The woodworking machine as recited in claim 1, further comprising a pair of spaced apart secondary grippers mounted on said shuttle, said spaced apart pair of robotic grippers and the pair of spaced apart secondary grippers being positioned adjacent opposite ends of said hollow, cylindrical cartridge, the pair of spaced apart secondary grippers being adapted for removing the molding from the hollow, cylindrical cartridge.
14. The woodworking machine as recited in claim 1, further comprising a pneumatic arm mounted to said frame, the pneumatic arm driving rotation of said cartridge.
15. The woodworking machine as recited in claim 14, further comprising means for selectively driving the pneumatic arm, the means being in electrical communication with said electronic control system.
16. The woodworking machine as recited in claim 15, further comprising a pneumatic connector bracket attached to said cartridge and a proximal end of the pneumatic arm, the pneumatic connector bracket joining said cartridge to the proximal end of the pneumatic arm.
17. The woodworking machine as recited in claim 1, further comprising means for selectively driving movement of said table, the driving means being in electrical communication with said electronic control system.
18. The woodworking machine as recited in claim 17, wherein the means for selectively driving movement of said table comprises a hydraulic drive system.
19. The woodworking machine as recited in claim 1, wherein said cutter assembly further comprises:
a spindle, the plurality of cutters being mounted on the spindle;
a headstock assembly; and
a tailstock assembly, the spindle having opposite ends mounted to the headstock and tailstock assemblies, respectively, the plurality of cutters being positioned therebetween.
20. The woodworking machine as recited in claim 1, further comprising a hydraulic cushion mounted to said frame for stabilizing and aligning said spaced apart pair of robotic grippers.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A thin film transistor comprising an insulation film and a semiconductor film on an upper side of a substrate, wherein the insulation film is an insulation film containing SiO, the thin film transistor includes minute pores in the insulation film, and the dielectric constant of the insulation film is about 3.4 or less.
2. A thin film transistor as in claim 1 wherein the thin film transistor contains pores in the insulation film mainly having a diameter of between 0.05 nm and 4 nm.
3. A thin film transistor as in claim 2 wherein the thin film transistor contains pores in the insulation film mainly having a diameter of between 0.05 nm and 1 nm.
4. A thin film transistor according to claim 1 wherein the insulation film is an insulation film formed by heating a coating film having a hydrogen silsesquioxane compound or a methyl silsesquioxane compound as its principal component.
5. A thin film transistor according to claim 2 wherein the insulation film is an insulation film formed by heating a coating film having a hydrogen silsesquioxane compound or a methyl silsesquioxane compound as its principal component.
6. A thin film transistor according to claim 1 wherein the transistor includes a polycrystalline silicon film formed by heat treatment of an amorphous silicon film.
7. A thin film transistor according to claim 2 wherein the transistor includes a polycrystalline silicon film formed by heat treatment of an amorphous silicon film.
8. A thin film transistor comprising an underlying insulation film, a gate insulation film, a semiconductor insulation film, an interlayer insulation film and a passivation film on the upper side of a substrate, wherein:
at least one of the insulation films is an insulation film containing SiO and contains pores mainly having a diameter of between 0.05 nm and 1 nm; and
the dielectric constant of the insulation film is 3.4 or less.
9. A thin film transistor according to claim 8 wherein the insulation film is an insulation film formed by heating a coating film having a hydrogen silsesquioxane compound or a methyl silsesquioxane compound as its principal component.
10. A liquid crystal display comprising a thin film transistor, wherein:
an insulation film forming a portion of the thin film transistor comprises an insulation film containing SiO;
the thin film transistor has minute pores in the insulation film; and
the dielectric constant of the insulation film is 3.4 or less.
11. A liquid crystal display according to claim 10 wherein the insulation film comprises at least one layer chosen from an underlying insulation film, a gate insulation film, a semiconductor insulation film, an interlayer insulation film and a passivation film formed on the upper side of a substrate.
12. A liquid crystal display according to claim 11 wherein the insulation film is an insulation film formed by heating a coating film having a hydrogen silsesquioxane compound or a methyl silsesquioxane compound as its principal component.
13. A liquid crystal display according to claim 12 wherein the liquid crystal display includes a semiconductor thin film comprising polycrystalline silicon formed by heat-treating an amorphous silicon film.
14. A liquid crystal display according to claim 10 wherein the thin film transistor comprises a circuit wiring formed by employing aluminum or a metal material having a resistivity smaller than the aluminum.
15. A self-emitting display comprising a thin film transistor, wherein:
an insulation film constituting the thin film transistor comprises an insulation film containing SiO,
the thin film transistor has minute pores in the insulation film, and
the dielectric constant of the insulation film is 3.4 or less.
16. A self-emitting display according to claim 15 wherein the insulation film is at least one layer among an underlying insulation film, a gate insulation film, a semiconductor insulation film an interlayer insulation film and a passivation film formed on the upper side of a substrate.
17. A self-emitting display according to claim 16 wherein the insulation film is an insulation film formed by heating a coating film having a hydrogen silsesquioxane compound or a methyl silsesquioxane compound as its principal component.
18. A self-emitting display according to claim 16 wherein the semiconductor thin film is a polycrystalline silicon film formed by heat-treating an amorphous silicon film.
19. A self-emitting display according to claim 16 wherein the thin film transistor comprises a circuit wiring formed by employing aluminum or a metal material having a resistivity smaller than the aluminum.