1. A method for making a semiconductor structure, comprising:
providing a donor wafer comprising:
a silicon layer that has relaxed strain;
a graded silicon germanium (SiGe) layer on the silicon layer; and
a SiGe buffer layer on the graded SiGe layer, wherein the SiGe buffer layer has relaxed strain;
epitaxially growing a first silicon layer on the SiGe buffer layer to have tensile strain;
forming a first dielectric layer on the first silicon layer;
performing an implant to form a cleave line in the SiGe buffer layer;
providing a handle wafer comprising:
a semiconductor substrate; and
second dielectric layer on the semiconductor substrate;
bonding the second dielectric layer to the first dielectric layer;
cleaving the SiGe buffer layer along the cleave line to leave the first dielectric layer, the first silicon layer, and a portion of the SiGe buffer layer attached to the handle wafer;
removing the portion of the SiGe layer to expose the first silicon layer;
epitaxially growing silicon on the first silicon layer by applying trisilane at a temperature below 650 degrees Celsius to form a low temperature silicon layer on the first silicon layer, wherein the low temperature silicon layer has tensile strain.
2. The method of claim 1, further comprising forming a transistor having a gate over the low temperature silicon layer, a first sourcedrain in the low temperature silicon layer, and a second sourcedrain in the low temperature in the low temperature silicon layer, wherein the gate is over a space between the first and second sourcedrains.
3. The method of claim 1, wherein the step of epitaxially growing silicon forms the low temperature silicon layer to a thickness of at least three times thicker than the first silicon layer and with biaxial tensile strain.
4. The method of claim 1, wherein the step of epitaxially growing silicon further comprises applying hydrogen with the trisilane.
5. The method of claim 1, wherein the step of epitaxially growing silicon further comprises applying helium with the trisilane.
6. The method of claim 1, wherein the step of providing the donor wafer is further characterized as providing the buffer SiGE layer at a germanium concentration of at least 30 percent.
7. The method of claim 6, wherein:
the step of epitaxially growing the first silicon layer grows the first silicon layer to a thickness less than 200 Angstroms; and
the step of epitaxially growing silicon forms the low temperature silicon layer to a thickness in excess of 300 Angstroms.
8. The method of claim 7, wherein the step of epitaxially growing silicon forms the low temperature silicon layer to a thickness in excess of 500 Angstroms.
9. The method of claim 8, wherein the step of epitaxially growing silicon forms the low temperature silicon layer to a thickness of about 1000 Angstroms.
10. The method of claim 1, wherein the forming the first dielectric layer comprises forming the first dielectric layer of high temperature oxide formed from dichlorosilane and nitrous oxide at a temperature of at least 750 degrees Celsius.
11. The method of claim 1, wherein the forming the first dielectric layer comprises forming the first dielectric layer of high temperature oxide formed from disilane and nitrous oxide at a temperature between about 800 and 850 degrees Celsius.
12. The method of claim 1, wherein the step of epitaxially growing the low temperature silicon layer is performed at a temperature not greater than 500 degrees Celsius.
13. A method of forming a semiconductor structure, comprising:
providing a donor wafer comprising:
a silicon layer;
a graded silicon germanium (SiGE) layer on the silicon layer; and
a SiGe buffer layer on the graded SiGe layer;
epitaxially growing a first silicon layer on the SiGe buffer layer;
forming a first dielectric layer on the first silicon layer;
providing a handle wafer comprising:
a supporting substrate; and
second dielectric layer on the supporting substrate;
bonding the second dielectric layer to the first dielectric layer;
cleaving the SiGe buffer layer to leave the first dielectric layer, the silicon layer, and a portion of the SiGe buffer layer attached to the handle wafer;
removing the portion of the SiGe layer to expose the first silicon layer;
epitaxially growing silicon on the first silicon layer by applying trisilane at a temperature below 650 degrees Celsius to form a low temperature silicon layer on the first silicon layer; and
forming a transistor over and in the low temperature silicon layer.
14. The method of claim 13, wherein:
the step of providing the donor wafer provides the SiGe buffer layer at a germanium concentration not less than 30 percent and the silicon layer at a relaxed strain;
the step of epitaxially growing the first silicon layer grows the first silicon layer to achieve a biaxial tensile strain; and
the step of epitaxially growing silicon comprises growing the low temperature silicon with a biaxial tensile strain.
15. The method of claim 13, wherein:
the step of epitaxially growing the first silicon layer grows the first silicon layer to thickness of less than 200 Angstroms; and
the step of epitaxially growing silicon comprises growing the low temperature silicon to a thickness of greater than 500 Angstroms at a temperature of not greater than 500 degrees Celsius.
16. The method of claim 17, wherein
the step of forming the first dielectric comprises reacting dichlorosilane and nitrous oxide at a temperature of at least 750 degrees Celsius.
17. The method of claim 13, wherein the forming the first dielectric layer comprises forming the first dielectric layer of high temperature oxide formed from dichorosilane and nitrous oxide at a temperature between about 800 and 850 degrees Celsius.
18. A method of forming a semiconductor structure, comprising:
providing a donor wafer comprising a silicon germanium (SiGe) buffer layer having relaxed strain;
epitaxially growing a first silicon layer on the SiGe buffer layer;
forming a first dielectric layer on the first silicon layer by applying disilane and nitrous oxide at a temperature of at least 750 degrees Celsius;
providing a handle wafer comprising:
a supporting substrate; and
an oxide layer on the supporting substrate;
bonding the first dielectric layer to the oxide layer;
cleaving the SiGe buffer layer to leave the first dielectric layer, the first silicon layer, and a portion of the SiGe buffer layer attached to the handle wafer;
removing the portion of the SiGe buffer layer to expose the first silicon layer;
epitaxially growing silicon on the first silicon layer to form a second silicon layer on the first silicon layer; and
forming a transistor in and over the second silicon layer.
19. The method of claim 18, wherein the forming the first dielectric layer occurs at a temperature between about 800 and 850 degrees Celsius.
20. The method of claim 18, wherein:
the step of providing the donor wafer provides the SiGe buffer layer at a germanium concentration not less than 30 percent;
the step of epitaxially growing the first silicon layer grows the first silicon layer to a thickness of less than 200 Angstroms with a biaxial tensile strain; and
the step of epitaxially growing silicon comprises growing the second silicon layer to a thickness of greater than 500 Angstroms at a temperature of not greater than 500 degrees Celsius with a biaxial tensile strain.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A computer-implemented process of managing status changes to a work order for management reporting, and auditing activities of work order performance in a telephone facility network, the process comprising:
configuring, in a computer memory, a table of local user defined event handling rules including status change event rules wherein each status change event rule indicates one or more actions to be performed on a work order for at least one status transition resulting from a change-in-status in the performance of a work order;
acquiring, from a communications network, a telephone line record from at least one of i) results from a mechanized loop test, ii) results from an automated local loop test system, iii) information from a digital subscriber line communication system, iv) information from a fiber optic communication system, and v) information from an Integrated Services Digital Network communication system, the telephone line record comprising at least one of i) customer information from a Customer Record Information System, ii) facility information from a Loop Facility Assignment Control System, and iii) equipment information from a switch system; creating a work order using information from the acquired telephone line record and assigning the work order an initial status;
receiving, from a communications network, work order change-in-status information wherein said change-in-status information includes a work order identifier, a status code, and a generating identifier; annotating the change-in-status information with a date and a time reflecting the local time zone of a telephone system wire center where the work order is locally managed;
validating that the annotated date and the time are chronologically after a previous change in status to the work order; updating the work order with the change in status; and archiving each change in status to the work order as the work order progresses from creation to closure;
filtering the table of event handling rules for the work order change-in-status information for an event criteria, the event criteria specifying a status transition matching one or more event handling rules, wherein the work order is automatically updated according to the corresponding actions of the one or more event handling rules, wherein at least one of the one or more event handling rules includes a corresponding action to set the status of the work order to a specified status code based on the change-in-status information and corresponding action of the event handling rules; and
providing a notification, via a communications network, of the transition to the specified status based on the change-in-status information;
wherein each transition in status in the life of the work order is tracked and logged for management, reporting, and auditing activities.
2. A process of managing status changes to a work order according to claim 1, where the generating identifier is a user identifier representing a user generating the change in status of the work order.
3. A process of managing status changes to a work order according to claim 1, where the generating identifier is a system name representing a system generating the change in status of the work order.
4. A process of managing status changes to a work order according to claim 1, where the generating identifier is a software component name representing a computer software component generating the change in status of the work order.
5. A process of managing status changes to a work order according to claim 1, further comprising manually editing the date and the time to permit a user to backdate the change in status.
6. A process of managing status changes to a work order according to claim 5, further comprising retaining the annotated date and time for a comparison to the manually-edited date and time.
7. A process of managing status changes to a work order according to claim 1, further comprising identifying the work order using a telephone number.
8. A process of managing status changes to a work order according to claim 1, further comprising identifying the change in status information using a telephone number.
9. A process of managing status changes to a work order according to claim 1, further comprising communicating a notification, via the communications network, when the change in status updates the work order to an intermediate status code.
10. A system for managing status changes to a work order for management, reporting, and auditing activities of work order performance in a telephone facility network, the system comprising
a computer and a memory comprising
a Status Manager module operable to:
configure, in a computer memory, a table of local user defined event handling rules including status change event rules wherein each status change event rule indicates one or more actions to be performed on a work order for at least one status transition resulting from a change-in-status in the performance of a work order;
acquire, from a communications network, a telephone line record from at least one of i) results from a mechanized loop test, ii) results from an automated local loop test system, iii) information from a digital subscriber line communication system, iv) information from a fiber optic communication system, and v) information from an Integrated Services Digital Network communication system, the telephone line record comprising at least one of i) customer information from a Customer Record Information System, ii) facility information from a Loop Facility Assignment Control System, and iii) equipment information from a switch system; create the work order using information from the acquired telephone line record and assign the work order an initial status;
receive, from a communications network, work order change-in-status information wherein said change-in-status information includes a work order identifier, a status code, and a generating identifier;
annotate the change-in-status information with a date and a time reflecting the local time zone of a telephone system wire center where the work order is locally managed;
validate that the annotated date and the time are chronologically after a previous change in status to the work order; update the work order with the change in status; and archive each change in status to the work order as the work order progresses from creation to closure;
filter the table of event handling rules for the work order the change-in-status for an event criteria, the event criteria specifying a status transition matching one or more event handling rules, wherein the work order is automatically updated according to the corresponding actions of the one or more event handling rules, wherein at least one of the one or more event handling rules includes a corresponding action to set the status of the work order to a specified status code based on the change-in-status information and corresponding action of the event handling rules; and
provide a notification, via a communications network, of the transition to the specified status based on the change-in-status information;
wherein each change in status in the life of the work order is tracked and logged for management, reporting, and auditing activities.
11. A computer program product for managing status changes to a work order for management, reporting, and auditing activities of work order performance in a telephone facility network, the computer program product comprising:
a computer-readable medium; and
a Status Manager module stored on the computer-readable medium, the Status Manager module operable to:
configure, in a computer memory, a table of local user defined event handling rules including status change event rules wherein each status change event rule indicates one or more actions to be performed on a work order for at least one status transition resulting from a change-in-status in the performance of a work order;
acquire, from a communications network, a telephone line record from at least one of i) results from a mechanized loop test, ii) results from an automated local loop test system, iii) information from a digital subscriber line communication system, iv) information from a fiber optic communication system, and v) information from an Integrated Services Digital Network communication system, the telephone line record comprising at least one of i) customer information from a Customer Record Information System, ii) facility information from a Loop Facility Assignment Control System, and iii) equipment information from a switch system; create the work order using information from the acquired telephone line record and assign the work order an initial status;
receive, from a communications network, work order change-in-status information wherein said change-in-status information includes a work order identifier, a status code, and a generating identifier;
annotate the change-in-status information with a date and a time, reflecting the local time zone of a telephone system wire center where the work order is locally managed;
validate that the annotated date and the time are chronologically after a previous change in status to the work order; update the work order with the change in status; and archive each change in status to the work order as the work order progresses from creation to closure;
filter the table of event handling rules for the work order the change-in-status for an event criteria, the event criteria specifying a status transition matching one or more event handling rule, wherein the work order is automatically updated according to the corresponding actions of the one or more event handling rules, wherein at least one of the one or more event handling rules includes a corresponding action to set the status of the work order to a specified status code based on the change-in-status information and corresponding action of the event handling rules; and
provide a notification, via a communications network, of the transition to the specified status based on the change-in-status information;
wherein each change in status in the life of the work order is tracked and logged for management, reporting, and auditing activities.