1. A method of fabricating an arrangement of nonvolatile memory devices, the method comprising:
(a) providing a semiconductor substrate;
(b) forming an oxide layer;
(c) forming a plurality of word lines substantially disposed above the oxide layer;
(d) forming a plurality of bit lines substantially disposed above the oxide layer;
(e) etching a plurality of via holes formed between the plurality of word lines and the plurality of bit lines substantially in contact with the plurality of word lines and the plurality of bit lines; and
(f) forming an anti-fuse dielectric material substantially disposed beside the plurality of bit lines and substantially in electrical contact with the plurality of bit lines, the anti-fuse dielectric material forming a plurality of side wall anti-fuse dielectrics beside the bit lines;
(g) forming a plurality of via plugs substantially in electrical contact with the plurality of word lines and substantially in contact with the plurality of side wall anti-fuse dielectrics.
2. The method of fabricating an arrangement of nonvolatile memory devices according to claim 1, wherein the bit lines are formed from polysilicon having a first type of background impurity and the via plugs are formed from polysilicon having a second type of background impurity opposite to the first type.
3. The method of fabricating an arrangement of nonvolatile memory devices according to claim 2, wherein the first type of background impurity is N-type and the second type of background impurity is P-type.
4. The method of fabricating an arrangement of nonvolatile memory devices according to claim 2, wherein the first type of background impurity is P-type and the second type of background impurity is N-type.
5. The method of fabricating an arrangement of nonvolatile memory devices according to claim 1, wherein the step of forming a plurality of word lines further comprises the step of forming a plurality of pairs of word lines.
6. The method of fabricating an arrangement of nonvolatile memory devices according to claim 5, wherein the pairs of word lines are disposed on different horizontal planes.
7. The method of fabricating an arrangement of nonvolatile memory devices according to claim 6, wherein the bit lines are formed from polysilicon having a first type of background impurity and the via plugs are formed from polysilicon having a second type of background impurity opposite to the first type.
8. The method of fabricating an arrangement of nonvolatile memory devices according to claim 7, wherein the first type of background impurity is N-type and the second type of background impurity is P-type.
9. The method of fabricating an arrangement of nonvolatile memory devices according to claim 7, wherein the first type of background impurity is P-type and the second type of background impurity is N-type.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A handsaw comprising:
a handle having a first and a second corresponding halves secured by a plurality of screws, wherein said first corresponding half has a first large circular hole formed in its front end which includes a protrudent ring and at least four positioning grooves spacedly formed in an inner periphery of the protrudent ring, and an elongate receiving space formed in the inner surface of the first corresponding half; said second corresponding half having a second large circular hole formed in its front end made in registry with the first large circular hole and threads in an inner periphery of the second large circular hole;
an angular adjustment device disposed in the front end of said handle between said first and second large circular holes having a hollow turning member rotatably disposed in the first large circular hole and including a pressing cap on a bottom of the turning member, a circular ring around an outer periphery of the turning member stopped against said protrudent ring and a detent on an outer periphery of the turning member abutting a rim of the turning member for selectively engaging one of said positioning grooves, a spring having a first end anchored into the rim of said turning member and a second end stopped against a circular clamping plate which has a striped circumference, a circular concave in a center of an inner side of the circular clamping plate for receiving the second end of said spring, a circular groove around said circular concave to engage with the rim of the hollow turning member, a diametric groove horizontally formed in an outer side opposite to the circular concave and including a retaining rod and a rectangular protrusion formed spaced apart thereon, a saw blade having a through hole at one end thereof for receiving said retaining rod and an extension beneath said through hole pressed against an underside of said rectangular protrusion, and a cup-shaped fastener having threads on an outer periphery thereof for engaging with the inner threads of said second large circular hole and for pressing against said circular clamping plate and said blade, and a circular groove formed in an inner surface engaged of the cup-shaped fastener for engaging with said retaining rod;
whereby, pressing said pressing cap inward and rotating about said circular clamping plate achieves an angular adjustment for said saw blade.
2. The handsaw as recited in claim 1, wherein said at least four positioning grooves have three of them positioned at a right side in said first large circular hole and a single one of them positioned at a left side thereof.
3. The handsaw as recited in claim 1, wherein said saw blade can be hid into said handle when is rotated for about 180 degrees.